HSU3006
N-Ch 30V Fast Switching MOSFETs
Description
Product Summary
The HSU3006 is the high cell density trenched Nch MOSFETs, which provide excellent RDSON and
gate charge for most of the synchronous buck
converter applications.
The HSU3006 meet the RoHS and Green Product
VDS
30
V
RDS(ON),max
5.5
mΩ
ID
80
A
requirement, 100% EAS guaranteed with full
function reliability approved.
l
l
l
l
l
TO252 Pin Configuration
100% EAS Guaranteed
Green Device Available
Super Low Gate Charge
Excellent CdV/dt effect decline
Advanced high cell density Trench
technology
Absolute Maximum Ratings
Rating
Symbol
Parameter
VDS
Drain-Source Voltage
10s
Steady State
Units
30
V
VGS
Gate-Source Voltage
±20
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
1
80
A
Continuous Drain Current, VGS @ 10V
1
57
A
Continuous Drain Current, VGS @ 10V
1
27
17
A
Continuous Drain Current, VGS @ 10V
1
23
14.5
A
ID@TC=100℃
ID@TA=25℃
ID@TA=70℃
IDM
Pulsed Drain Current
2
EAS
Single Pulse Avalanche Energy
IAS
Avalanche Current
PD@TC=25℃
PD@TA=25℃
Total Power Dissipation
4
Total Power Dissipation
4
3
160
A
115.2
mJ
48
A
53
W
6
2.4
W
TSTG
Storage Temperature Range
-55 to 175
℃
TJ
Operating Junction Temperature Range
-55 to 175
℃
Thermal Data
Symbol
RθJA
RθJA
RθJC
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Parameter
Typ.
Thermal Resistance Junction-ambient (Steady State)
1
Thermal Resistance Junction-Ambient (t ≤10s)
Thermal Resistance Junction-Case
Ver 2.0
1
1
Max.
Unit
---
62
℃/W
---
25
℃/W
---
2.8
℃/W
1
HSU3006
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
BVDSS
Parameter
Conditions
Drain-Source Breakdown Voltage
△BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON)
Static Drain-Source On-Resistance
VGS(th)
Gate Threshold Voltage
2
Min.
Typ.
Max.
Unit
VGS=0V , ID=250uA
30
---
---
V
Reference to 25℃ , ID=1mA
---
0.028
---
V/℃
VGS=10V , ID=30A
---
4.7
5.5
VGS=4.5V , ID=15A
---
7.5
9
1.0
1.5
2.5
V
---
-6.16
---
mV/℃
VDS=24V , VGS=0V , TJ=25℃
---
---
1
VDS=24V , VGS=0V , TJ=55℃
---
---
5
---
±100
nA
VGS=VDS , ID =250uA
mΩ
△VGS(th)
VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS
Gate-Source Leakage Current
VGS=±20V , VDS=0V
---
gfs
Forward Transconductance
VDS=5V , ID=30A
---
22
---
S
Rg
Gate Resistance
VDS=0V , VGS=0V , f=1MHz
---
1.7
3.4
Ω
Qg
Total Gate Charge (4.5V)
---
20
---
Qgs
Gate-Source Charge
---
7.6
---
Qgd
Gate-Drain Charge
---
7.2
---
Turn-On Delay Time
---
7.8
---
Td(on)
Tr
Td(off)
Tf
Ciss
VDS=15V , VGS=4.5V , ID=15A
uA
nC
Rise Time
VDD=15V , VGS=10V , RG=3.3Ω
---
15
---
Turn-Off Delay Time
ID=15A
---
37.3
---
---
10.6
---
---
2295
---
---
267
---
---
210
---
Min.
Typ.
Max.
Unit
---
---
80
A
---
---
160
A
VGS=0V , IS=1A , TJ=25℃
---
---
1
V
Fall Time
Input Capacitance
VDS=15V , VGS=0V , f=1MHz
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
ns
pF
Diode Characteristics
Symbol
Parameter
Conditions
1,5
IS
Continuous Source Current
ISM
Pulsed Source Current
2,5
2
VG=VD=0V , Force Current
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
IF=30A , dI/dt=100A/µs ,
---
14
---
nS
Qrr
Reverse Recovery Charge
TJ=25℃
---
5
---
nC
Note :
2
1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=53.8A
4.The power dissipation is limited by 175℃ junction temperature
5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
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Ver 2.0
2
HSU3006
N-Ch 30V Fast Switching MOSFETs
Typical Characteristics
180
9
ID=12A
120
VGS=10V
90
VGS=7V
VGS=5V
VGS=3V
8
RDSON (mΩ)
ID Drain Current (A)
150
VGS=4.5V
60
6
5
30
0
3
0
0.5
1
1.5
2
2.5
VDS , Drain-to-Source Voltage (V)
3
2
Fig.1 Typical Output Characteristics
4
6
8
VGS (V)
10
Fig.2 On-Resistance vs. G-S Voltage
10
12
ID =15A
TJ=25℃
VGS , Gate to Source Voltage (V)
TJ=150℃
IS(A)
9
6
3
0
0
0.3
0.6
0.9
8
6
VDS=15V
VDS=24V
4
2
0
1.2
0
VSD , Source-to-Drain Voltage (V)
Fig.3 Forward Characteristics of Reverse
12
18
24
30
QG , Total Gate Charge (nC)
36
42
Fig.4 Gate-Charge Characteristics
1.8
Normalized On Resistance
1.8
1.4
1.4
Normalized VGS(th)
6
1.0
1
0.6
0.6
0.2
0.2
-50
0
50
100
150
TJ ,Junction Temperature (℃ )
-5
40
85
130
175
TJ , Junction Temperature (℃)
Fig.5 Normalized VGS(th) vs. TJ
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-50
Fig.6 Normalized R DSON vs. TJ
Ver 2.0
3
HSU3006
N-Ch 30V Fast Switching MOSFETs
10000
Capacitance (pF)
F=1.0MHz
Ciss
1000
Coss
Crss
100
10
1
5
9
13
17
21
25
VDS , Drain to Source Voltage (V)
Fig.7 Capacitance
Fig.8 Safe Operating Area
Normalized Thermal Response (RθJC)
1
DUTY=0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
P DM
SINGLE
T ON
T
D = TON/T
TJpeak = TC+P DMXRθJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Pulse Width (s)
Fig.9 Normalized Maximum Transient Thermal Impedance
EAS=
VDS
90%
10%
VGS
Td(on)
Tr
Ton
Td(off)
BVDSS
BVDSS-VDD
VDD
IAS
Tf
VGS
Toff
Fig.10 Switching Time Waveform
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BVDSS
1
L x IAS2 x
2
Fig.11 Unclamped Inductive Switching Waveform
Ver 2.0
4
HSU3006
N-Ch 30V Fast Switching MOSFETs
Ordering Information
Part Number
HSU3006
www.hs-semi.cn
Package code
TO252-2
Ver 2.0
Packaging
2500/Tape&Reel
5
