HSU6040

HSU6040 N-Ch 60V Fast Switching MOSFETs Description Product Summary The HSU6040 is the high cell density trenched N- VDS 60 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 5.2 mΩ ID 112 A converter applications. The HSU6040 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. l l l l l TO252 Pin Configuration Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM ±20 V Continuous Drain Current, VGS @ 10V 1 112 A Continuous Drain Current, VGS @ 10V 1 72 A 250 A 125 mJ 50 A 104 W Pulsed Drain Current 2 EAS Single Pulse Avalanche Energy IAS Avalanche Current 3 4 PD@TC=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. RθJA Thermal Resistance Junction-Ambient RθJC 1 www.hs-semi.cn Thermal Resistance Junction-Case Ver 2.0 1 Max. Unit --- 62 ℃/W --- 1.2 ℃/W 1 HSU6040 N-Ch 60V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter Conditions BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage 2 Min. Typ. Max. Unit VGS=0V , ID=250uA 60 --- --- V VGS=10V , ID=18A --- 4.3 5.2 mΩ VGS=4.5V , ID=10A --- 6 7 mΩ VGS=VDS , ID =250uA 1.2 --- 2.5 V VDS=48V , VGS=0V , TJ=25℃ --- --- 1 VDS=48V , VGS=0V , TJ=55℃ --- --- 5 IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=10V , ID=30A --- 75 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 0.7 --- Ω Qg Total Gate Charge (10V) --- 75 --- Qgs Gate-Source Charge --- 15.5 --- Qgd Gate-Drain Charge --- 20.3 --- Turn-On Delay Time --- 18.5 --- Td(on) VDS=48V , VGS=10V , ID=18A uA nC Rise Time VDD=30V , VGS=10V , RG=3.3Ω, --- 8.8 --- Turn-Off Delay Time ID=18A --- 58.8 --- Fall Time --- 15.8 --- Ciss Input Capacitance --- 4706 --- Coss Output Capacitance --- 325 --- Crss Reverse Transfer Capacitance --- 245 --- Min. Typ. Max. Unit --- --- 116 A --- --- 250 A Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM Parameter Conditions 1,5 Continuous Source Current Pulsed Source Current 2,5 2 VG=VD=0V , Force Current VSD Diode Forward Voltage VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V trr Reverse Recovery Time IF=18A , di/dt=100A/µs , --- 22.9 --- nS Qrr Reverse Recovery Charge TJ=25℃ --- 11.6 --- nC Note : 2 1.The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=50V,VGS=10V,L=0.1mH,IAS=50A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.0 2 HSU6040 N-Ch 60V Fast Switching MOSFETs Typical Characteristics ID Drain Current (A) VGS=1 VGS= VGS= VGS=4. VGS=4 VDS , Drain-to-Source Voltage (V) Fig.2 On-Resistance vs. Gate-Source Voltage Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Normalized On Resistance Fig.1 Typical Output Characteristics TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) vs. TJ www.hs-semi.cn Fig.6 Normalized R DSON vs. TJ Ver 2.0 3 HSU6040 Ciss 10us 100u Co 1ms 10m 100 D ID (A) Capacitance (pF) N-Ch 60V Fast Switching MOSFETs Crs TC=25℃ Single Pulse F=1.0MHz VDS (V) VDS , Drain to Source Voltage(V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 P DM SINGLE T ON T D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% Td(on) Tr Ton Td(off) VDD IAS Tf VGS Toff Fig.10 Switching Time Waveform www.hs-semi.cn BVDSS BVDSS-VDD BVDSS 10% VGS 1 L x IAS2 x 2 Fig.11 Unclamped Inductive Switching Ver 2.0 4 HSU6040 N-Ch 60V Fast Switching MOSFETs Ordering Information Part Number HSU6040 www.hs-semi.cn Package code TO252-2 Ver 2.0 Packaging 2500/Tape&Reel 5