5N70GS

5N70GS 5 Amps,700 Volts N-Channel Super Junction Power MOSFET FEATURE TO-252  5A,700V,RDS(ON)MAX=1.2Ω@VGS=10V/2.5A  Low gate charge  Low Ciss  Fast switching  100% avalanche tested  Improved dv/dt capability Absolute Maximum Ratings(TC=25℃,unless otherwise noted) Parameter Symbol 5N70GS Drain-Source Voltage VDSS 700 Gate-Source Voltage VGSS ±30 Continuous Drain Current ID 5 Pulsed Drain Current(Note1) IDM 15 Single Pulse Avalanche Energy (Note 2) EAS 30 mJ Avalanche Current(Note1) IAR 2.5 A Repetitive Avalanche Energy (Note1) EAR 0.4 mJ Reverse Diode dV/dt (Note 3) dv/dt 15 V/ns TJ,TSTG -55 to +150 ℃ TL 260 ℃ Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds Thermal UNIT V A Characteristics Parameter Maximum Junction-to-Case Maximum Power Dissipation Version1.0-2015.2 TC=25℃ Symbol 5N70GS Units RthJC 2.75 ℃/W PD 45 W www.perfectway.cn Electrical Characteristics (Tc=25℃,unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Units 700 － － V － 0.6 － V/℃ Off Characteristics Drain-Source Breakdown Voltage Breakdown Temperature Coefficient BVDSS ΔBVDSS VGS=0V,ID=250uA Reference to 25℃， /ΔTJ ID=250uA Zero Gate Voltage Drain Current IDSS VDS=700V,VGS=0V － － 1 μA Gate-Body Leakage Current,Forward IGSSF VGS=30V,VDS=0V － － 1 μA Gate-Body Leakage Current,Reverse IGSSR VGS=-30V,VDS=0V － － -1 μA Gate-Source Threshold Voltage VGS(th) VDS=VGS,ID=250uA 2 － 4 V Drain-Source On-State Resistance RDS(on) VGS=10V,ID=2.5A － 1.0 1.2 Ω Input Capacitance Ciss VDS=50V,VGS=0V, － 460 － pF Output Capacitance Coss f=1.0MHZ － 45 － pF Reverse Transfer Capacitance Crss － 3.5 － pF VDD=380V,ID=5A, － 6 － ns tr RG=18Ω － 3 － ns td(off) (Note4,5) － 50 － ns － 9 － ns On Characteristics Dynamic Characteristics Switching Characteristics Turn-On Delay Time td(on) Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg VDS=480V,ID=5A, － 10 － nC Gate-Source Charge Qgs VGS=10V, (Note4,5) － 1.6 － nC Gate-Drain Charge Qgd － 4.0 － nC IS － － 5 A Pulsed Diode Forward Current ISM － － 15 A Diode Forward Voltage VSD IS=5A,VGS=0V － － 1.3 V Reverse Recovery Time trr VGS=0V,IS=5A, － 250 － ns Reverse Recovery Charge Qrr dIF/dt=100A/us, (Note4) － 2.2 － μC Drain-Source Body Diode Charcteristics and Maximum Ratings Continuous Diode Forward Current Notes 1. Repetitive Rating:pulse width limited by maximum junction temperature. 2. VDD=50V,L=10mH,Rg=25Ω,IAS=2.5A ,starling TJ=25℃. 3. ISD≤ID,dI/dt=200A/us,VDD≤BVDSS,starting TJ=25℃. 4. Pulse width≤300us;duty cycle≤2%. 5. Repetitive rating; pulse width limited by maximum junction temperature. Version1.0-2015.2 www.perfectway.cn TEST CIRCUIT AND WAVEFORM Version1.0-2015.2 www.perfectway.cn Version1.0-2015.2 www.perfectway.cn RATINGAND CHARACTERISTIC CURVES 24 T J =25℃ 9 7V 6 6V 3 5V 0 0 5 10 15 20 25 V DS,Drain-to-Source Voltage(V) 8 4 30 4 8 12 16 20 Q g ,Total Gate Charge(nC) 24 T J =25℃ 1 V GS =0 V 0.2 0.4 0.6 0.8 1.0 1.2 V DS,Source-Drain Voltage(V) C iss 1000 Capacitance(pF) T J =150℃ 10 0.1 0 10000 C oss 100 1.4 0 800 3.0 750 2.5 700 650 600 550 500 -60 -40 -20 0 25 50 75 100 125 150 175 T J , Junction Temperature( ℃ ) Version1.0-2015.2 V GS = 0 V,f = 1MHz C iss = C gs C gd,C ds Shorted C rss = C gd C oss = C ds + C gd C rss 10 1 RDS(on),Drain-to-Source On Resistance (Normalized) ISD , Reverse Drain Current(A) 12 0 100 VDS , Drain-to-Source Brakdown Voltage(V) 16 0V 8V 48 12 20 S= 15 VD 15V TOP 14V 13V 12V 11V 10V 9V VGS,Gate-to-Source Voltage(V) ID,Drain-to-Source Current(A) 18 100 200 300 400 500 V DS,Drain-to-Source Voltage(V) 600 ID =2.5 A 2.0 1.5 1.0 V GS=10 V 0.5 0 -75 -50 -25 0 25 50 75 100 125 150 175 T J , Junction Temperature( ℃ ) www.perfectway.cn 10 10 Limited by RDS(on) 1 100μs 1ms RDS(ON) , Rrain-Source On-Resistance (Ω) ID, Drain Current(A) Operation in this Area Limited by RDS(on) IDM=Limited 100 10ms 0.1 TC=25℃ DC TJ=150℃ BVDSS Limited Single Pulse 0.01 1 10 100 1000 VDS,Drain-to-Source Voltage(V) 1 10 ID, Drain Current(V) 100 5 VTH , Gate Threshold Voltage(V) EAS , Avalanche Energy(mJ) VGS =10V 1 0.1 0.1 50 40 30 20 10 0 Common Source Tc=25℃ Pulse Test 4 3 2 1 0 -80 25 50 75 100 125 150 TCH , Channel Temperature(Initial) ( ℃) Common Source VDS=10V ID=250uA Pulse Test -40 0 40 80 120 TC, Case Temperature(℃) 140 1 Nomalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.0001 Single Pulse 0.001 0.01 0.1 1 10 Pulse Time(s) Version1.0-2015.2 www.perfectway.cn PACKAGE OUTLINE DIMENSIONS TO-252 L B C I 2 N C D A E F 3 D G F E M a P A B H PIN 1 Dim G J H K I J K L P M N a TO-252 Min Max .230(5.85) .246(6.25) .250(6.35) .264(6.75) .207(5.27) .218(5.54) .037(0.93) .045(1.14) .106(2.70) .138(3.50) .028(0.72) .033(0.84) .024(0.60) .041(1.05) .028(0.72) .043(1.10) .085(2.15) .096(2.45) .037(0.95) .047(1.20) .018(0.45) .026(0.65) .018(0.45) .024(0.60) .081(2.05) .094(2.40) .000(0.00) .006(0.15) -.008(0.20) 0° 10° Dimensions in inches and (millimeters) Version1.0-2015.2 www.perfectway.cn