MS3N100HGD0

MS3N100HGC0/D0/T1/D1 N-channel 1000V – 5.2Ω - 3A features  Low gate charge (typical 12nC)  Low Crss (typical 5.5pF)  100% avalanche tested  Fast switching  Improved dv/dt capability Applications  Switching application Electrical ratings Absolute maximum ratings Parameter Symbol Value Unit Drain-source voltage（VGS=0) VDS 1000 Gate-source voltage VGS ±30 Drain current（continuous）at TC=25℃ ID 3 Drain current（continuous）at TC=100℃ ID 2.1 Drain current（pulsed） IDM 12 A IAR 3 A EAS 300 mJ PD 272 W PD 50 W VESD(GS) 4000 V dv/dt 4.5 V/ns VISO 2500 v -55 to 175 ℃ V A Avalanche current repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25℃ Id=lar Vdd=50V) Total dissipation at TC=25℃(TO-247) Total dissipation at TC=25℃ (TO-252/TO-251) Drain source ESD (HBM-C=100pF,R=1.5KΩ） Peak diode recovery voltage slope Insulation withstand voltage(RMS)from all three leads to external heat sink (t=1s TC=25℃） H1.03 Operating junction temperature TJ Storage temperature TSTG Maspower 1 MS3N100HGC0/D0/T1/D1 N-channel 1000V – 5.2Ω - 3A Electrical characteristics (TCASE=25℃ unless otherwise specified) On/off states Parameter Symbol Test conditions Min Typ Max Unit Drain-source breakdown voltage Zero gate voltage drain current (VGS=0) Gate body leakage current (VGS=0) V(BR)DSS IDSS IGSS Gate threshold voltage VGS(th) Static drain-source on resistance RDS(on) Dynamic Parameter Forward transconductance 1000 - - V VDS=Max rating - - 1 μA TC=125℃ - - 100 μA VGS=±30V - - 3.0 4.0 5.0 V - 5.2 5.8 Ω VDS=VGS ID=100μA VGS=10V ID=1A Symbol Test conditions gfs VDS = 15 V, ID = 1.75A Input capacitance Ciss Output capacitance Coss Reverse transfer ID=1mA VGS=0 VDS=25V,f=1MHz,VGS=0 Min Typ ±100 nA Max Unit - 3 - - 390 500 - 45 60 - 5.5 7.0 - 12 15 - 2.8 - - 6.1 - - 15 40 capacitance Crss Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time td(on) Rise time tr VDD = 500V, ID =3A, - 35 80 Turn-off-delay time td(off) RG = 25 Ω, VGS = 10 V - 20 50 Fall time tf - 30 70 Source Drain Diode Parameter Symbol Source Drain Current Source Drain Current(Pulsed) VDD=800V,ID=3A VGS=10V Test conditions Min Typ S pF nC ns Max Unit ISD - - 3 A ISDM - - 12 A Forward On Voltage VSD ISD=3A,VGS=0V - - 1.2 V Reverse Recovery Time Trr ISD=3A,di/dt=100A/μS - 400 - ns Qrr ISD=3A,di/dt=100A/μS - 1.6 - μC Reverse Recovery Charge H1.03 Maspower 2 MS3N100HGC0/D0/T1/D1 N-channel 1000V – 5.2Ω - 3A Thermal data Parameter Symbol Value Unit Thermal resistance junction max(TO-247) Rthj-case 0.46 ℃/W Thermal resistance junction max(TO-252) Rthj-case 2.5 ℃/W Order codes Partnumber Marking Package MS3N100HGC0 MS3N100HGC0 TO-247 MS3N100HGD0 MS3N100HGD0 TO-252 MS3N100HGT1 MS3N100HGT1 TO-220F MS3N100HGD1 MS3N100HGD1 TO-251 Electrical characteristics (curves) H1.03 Maspower 3 MS3N100HGC0/D0/T1/D1 N-channel 1000V – 5.2Ω - 3A H1.03 Maspower 4 MS3N100HGC0/D0/T1/D1 N-channel 1000V – 5.2Ω - 3A Package outline dimension H1.03 Maspower 5 MS3N100HGC0/D0/T1/D1 N-channel 1000V – 5.2Ω - 3A H1.03 Maspower 6