SUD50P08-25L-E3-VB

SUD50P08-25L-E3 www.VBsemi.com P-Channel 100-V (D-S) 175 °C MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.017 at VGS = - 10 V - 50 0.021 at VGS = - 4.5 V - 47 VDS (V) - 100 Qg (Typ) • TrenchFET® Power MOSFET RoHS COMPLIANT 55 nC TO-252 S G Drain Connected to Tab G D S Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Symbol Limit Drain-Source Voltage VDS - 100 Gate-Source Voltage VGS ± 20 Parameter TC = 70 °C TA = 25 °C - 42.5a ID - 12.5b, c - 10.5b, c TA = 70 °C IDM Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 70 °C TA = 25 °C - 50a IS - 6.9b, c IAS - 45 EAS 101 mJ 136 95 PD W 8.3b, c 5.8b, c TA = 70 °C TJ, Tstg Operating Junction and Storage Temperature Range A - 40 TC = 25 °C Maximum Power Dissipation V - 50a TC = 25 °C Continuous Drain Current (TJ = 175 °C) Unit - 55 to 175 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Case (Drain) Symbol Typical Maximum t ≤ 10 sec RthJA 15 18 Steady State RthJC 0.85 1.1 Unit °C/W Notes: a. Package limited. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 sec. d. Maximum under steady state conditions is 40 °C/W. 服务热线：400-655-8788  SUD50P08-25L-E3 www.VBsemi.com SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min VDS VGS = 0 V, ID = - 250 µA - 100 Typ Max Unit Static Drain-Source Breakdown Voltage VDS Temperature Coefficient ΔVDS/TJ VGS(th) Temperature Coefficient ΔVGS(th)/TJ Gate-Source Threshold Voltage ID = - 250 µA VGS(th) VDS = VGS, ID = - 250 µA Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 20 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea rDS(on) Forward Transconductancea gfs V - 73 mV/°C - 5.5 -1 -3 V ± 100 nA VDS = - 100 V, VGS = 0 V -1 VDS = - 100 V, VGS = 0 V, TJ = 55 °C - 10 VDS ≥ 5 V, VGS = - 10 V µA A VGS = - 10 V, ID = - 12.5 A 0.017 VGS = - 4.5 V, ID = - 10.5 A 0.021 VDS = - 15 V, ID = - 12.5 A 52 Ω S b Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Rg 4700 VDS = - 50 V, VGS = 0 V, f = 1 MHz td(off) VDS = - 50 V, VGS = - 10 V, ID = - 12.5 A VDS = - 50 V, VGS = - 4.5 V, ID = - 12.5 A f = 1 MHz VDD = - 50 V, RL = 3.8 Ω ID ≅ - 10.5 A, VGEN = - 10 V, Rg = 1 Ω tf td(off) 105 160 55 85 16 nC 26 td(on) tr pF 235 td(on) tr 320 VDD = - 40 V, RL = 3.8 Ω ID ≅ - 10.5 A, VGEN = - 4.5 V, Rg = 1 Ω tf Ω 4 45 70 220 330 95 145 110 165 15 25 25 40 105 160 100 150 ns ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulse Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Fall Time ta Reverse Recovery Rise Time tb TC = 25 °C - 50 - 40 IS = - 10.5 A IF = - 10.5 A, di/dt = 100 A/µs, TJ = 25 °C A - 0.8 - 1.2 V 55 85 ns 110 165 nC 37 18 ns Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 服务热线：400-655-8788 SUD50P08-25L-E3 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C unless noted 20 40 VGS = 10 thru 5 V 35 I D - Drain Current (A) I D - Drain Current (A) 16 30 25 20 15 12 8 TA = 125 °C 10 4 3V 25 °C 5 - 55 °C 0 0.0 0.5 1.0 1.5 2.0 2.5 0 0.0 3.0 0.5 1.0 Output Characteristics 2.5 3.0 3.5 Transfer Characteristics 0.022 8000 7000 0.021 VGS = 6 V 6000 C - Capacitance (pF) rDS(on) - On-Resistance (Ω) 2.0 VGS - Gate-to-Source Voltage (V) VDS - Drain-to-Source Voltage (V) 0.020 0.019 0.018 VGS = 10 V Ciss 5000 4000 3000 2000 Coss 0.017 Crss 1000 0.016 0 0 5 10 15 20 25 30 35 40 0 10 30 20 40 50 60 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage Capacitance 70 80 150 175 2.3 10 2.1 ID = 12.5 A 8 ID = 12.5 A 1.9 rDS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 1.5 VDS = 64 V 6 VDS = 40 V 4 VGS = 10 V 1.7 1.5 1.3 VGS = 6 V 1.1 0.9 2 0.7 0 0 20 40 60 80 Qg - Total Gate Charge (nC) Gate Charge 100 120 0.5 - 50 - 25 0 25 50 75 100 125 TJ - Junction Temperature (°C) On-Resistance vs. Junction Temperature 服务热线：400-655-8788 3 SUD50P08-25L-E3 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C unless noted 0.05 rDS(on) - Drain-to-Source On-Resistance (Ω) I S - Source Current (A) 40 TJ = 150 °C 10 TJ = 25 °C 0.04 TA = 125 °C 0.03 TA = 25 °C 0.02 0.01 1 0.00 0.2 0.6 0.4 0.8 1.0 2 1.2 3 4 VSD - Source-to-Drain Voltage (V) 2.4 7 8 9 10 35 2.2 30 ID = 250 µA 2.0 25 Power (W) VGS(th) (V) 6 On-Resistance vs. Gate-to-Source Voltage Source-Drain Diode Forward Voltage 1.8 1.6 1.4 20 15 10 1.2 1.0 - 50 5 VGS - Gate-to-Source Voltage (V) 5 - 25 0 25 50 75 100 125 150 0 0.01 175 0.1 TJ - Temperature (°C) 1 10 100 1000 Time (sec) Threshold Voltage Single Pulse Power, Junction-to-Ambient 100 I D - Drain Current (A) 10 100 µs *Limited by rDS(on) 1 ms 10 ms 1 100 ms 1s 10 s 0.1 dc TA = 25 °C Single Pulse 0.01 0.001 0.1 1 10 100 1000 VDS - Drain-to-Source Voltage (V) *VGS > minimum V GS at which rDS(on) is specified Safe Operating Area, Junction-to-Ambient 服务热线：400-655-8788 4 SUD50P08-25L-E3 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C unless noted 140 60 120 50 Package Limited Power ID - Drain Current (A) 100 40 30 20 80 60 40 10 20 0 0 0 25 50 75 100 125 150 175 25 50 75 100 125 TC - Case Temperature (°C) TC - Case Temperature (°C) Current Derating* Power Derating 150 175 IC - Peak Avalanche Current (A) 100 10 TA = L · ID BV - V DD 1 0.00001 0.000001 0.0001 0.001 0.01 TA - Time In Avalanche (sec) Single Pulse Avalanche Capability *The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 服务热线：400-655-8788 5 SUD50P08-25L-E3 www.VBsemi.com TYPICAL CHARACTERISTICS 25 °C unless noted Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 65 °C/W 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-2 10-1 1 10 Square Wave Pulse Duration (sec) 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (sec) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case 6 服务热线：400-655-8788 SUD50P08-25L-E3 www.VBsemi.com Disclaimer All products due to improve reliability, function or design or for other reasons, product specifications and data are subject to change without notice. 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