WTR06N300LS-HAF

WTR06N300LS-HAF N-Channel Enhancement Mode MOSFET Features • Low RDS(ON) • Halogen and Antimony Free(HAF), RoHS compliant Drain Gate Applications • Boost converters • Synchronous rectifiers • LED backlighting Key Parameters Parameter BVDSS RDS(ON) Max VGS(th) typ Qg typ Source 1.Gate 2.Drain 3.Source TO-252 Plastic Package Value 60 34 @ VGS = 10 V 38 @ VGS = 4.5 V 1.5 19 @ VGS = 10 V Unit V mΩ V nC Absolute Maximum Ratings (at Ta = 25℃ unless otherwise specified) Parameter Symbol Value Unit VDS 60 V VGS ± 20 20 13 V IDM 50 A IAS 8.7 A EAS 3.7 mJ PD 25 W Tj, Tstg - 55 to + 150 ℃ Symbol Max. Unit Thermal Resistance from Junction to Case RθJC 5 ℃/W Thermal Resistance from Junction to Ambient 3) RθJA 50 ℃/W Drain-Source Voltage Gate-Source Voltage Tc = 25℃ Tc = 100℃ Continuous Drain Current Peak Drain Current,Pulsed 1) Avalanche Current Single Pulse Avalanche Energy 2) Power Dissipation Tc = 25℃ Operating Junction and Storage Temperature Range ID A Thermal Characteristics Parameter 1) Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature TJ(MAX) = 150°C. 2) Limited by TJ(MAX), starting TJ = 25 °C, L = 0.1 mH, Rg = 25 Ω, IAS = 8.7 A, VGS = 10 V. 3) Device Surface Mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate, in a still air. 1/8 ® Dated: 02/03/2022 Rev: 02 WTR06N300LS-HAF Characteristics at Ta = 25℃ unless otherwise specified Parameter Symbol Min. Typ. Max. Unit BVDSS 60 - - V IDSS - - 1 µA IGSS - - ±100 nA VGSth 1.2 - 2.5 V RDS(on) - 26 - 34 38 mΩ gfs - 18 - S Rg - 0.8 - Ω Ciss - 1260 - pF Coss - 47 - pF Crss - 43 - pF Qg - 19 8.7 - nC Qgs - 4.3 - nC Qgd - 2.6 - nC td(on) - 11 - ns tr - 27 - ns td(off) - 10 - ns tf - 2 - ns VSD - - 1.3 V Body-Diode Continuous Current IS - - 20 A Body-Diode Continuous Current, Pulsed ISM - - 50 A trr - 7.2 - ns Qrr - 4.5 - nC STATIC PARAMETERS Drain-Source Breakdown Voltage at ID = 10 mA Drain-Source Leakage Current at VDS = 48 V Gate-Source Leakage Current at VGS = ± 20 V Gate-Source Threshold Voltage at VDS = VGS, ID = 250 µA Drain-Source On-State Resistance at VGS = 10 V, ID = 15 A at VGS = 4.5 V, ID = 10 A DYNAMIC PARAMETERS Forward Transconductance at VDS = 5 V, ID = 15 A Gate Resistance at VGS = 0 V, VDS = 0 V, f = 1 MHz Input Capacitance at VGS = 0 V, VDS = 30 V, f = 1 MHz Output Capacitance at VGS = 0 V, VDS = 30 V, f = 1 MHz Reverse Transfer Capacitance at VGS = 0 V, VDS = 30 V, f = 1 MHz Total Gate Charge at VDS = 30 V, VGS = 10 V, ID = 15 A at VDS = 30 V, VGS = 4.5 V, ID = 15 A Gate Source Charge at VDS = 30 V, VGS = 10 V, ID = 15 A Gate Drain Charge at VDS = 30 V, VGS = 10 V, ID = 15 A Turn-On Delay Time at VDS = 30 V, VGS = 10 V, ID = 15 A, Rg = 3.3 Ω Turn-On Rise Time at VDS = 30 V, VGS = 10 V, ID = 15 A, Rg = 3.3 Ω Turn-Off Delay Time at VDS = 30 V, VGS = 10 V, ID = 15 A, Rg = 3.3 Ω Turn-Off Fall Time at VDS = 30 V, VGS = 10 V, ID = 15 A, Rg = 3.3 Ω Body-Diode PARAMETERS Drain-Source Diode Forward Voltage at IS = 1 A, VGS = 0 V Body Diode Reverse Recovery Time at IS = 15 A, di/dt = 100 A / µs Body Diode Reverse Recovery Charge at IS = 15 A, di/dt = 100 A / µs 2/8 ® Dated: 02/03/2022 Rev: 02 WTR06N300LS-HAF Electrical Characteristics Curves Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics Fig. 3 On-Resistance vs. Drain Current Fig. 4 On-Resistance vs. Gate to Source Fig. 5 On-Resistance vs.Tj Fig. 6 Typical Body-Diode Forward Characteristics 3/8 ® Dated: 02/03/2022 Rev: 02 WTR06N300LS-HAF Electrical Characteristics Curves Fig. 7 Typical Junction Capacitance Fig. 8 Drain-Source Leakage Current vs. Tj Fig. 9 V(BR)DSS vs. Junction Temperature Fig. 10 Gate Threshold Variation vs. Tj Fig. 12 Safe Operation Area Fig. 11 Gate Charge 4/8 ® Dated: 02/03/2022 Rev: 02 WTR06N300LS-HAF Electrical Characteristics Curves Fig.13 Normalized Maximum Transient Thermal Impedance(zϴJC) Fig.14 Normalized Maximum Transient Thermal Impedance(zϴJA) 5/8 ® Dated: 02/03/2022 Rev: 02 WTR06N300LS-HAF Test Circuits Fig.1-2 Switching Waveform Fig.1-1 Switching times test circuit Fig.2-1 Gate charge test circuit Fig.2-2 Gate charge waveform Fig.3-1 Avalanche test circuit Fig.3-2 Avalanche waveform 6/8 ® Dated: 02/03/2022 Rev: 02 WTR06N300LS-HAF Package Outline (Dimensions in mm) UNIT mm A 2.5 2.1 A1 0.15 0 b 1.0 0.5 b2 1.15 0.65 b3 5.5 4.9 C 0.65 0.4 C2 0.65 0.4 TO-252 D 6.2 5.6 D1 5.4 5.0 Recommended Soldering Footprint E 6.7 6.1 E1 5.0 4.6 e e1 2.30 4.60 TYP. TYP. H 10.7 9 L 1.78 1.40 L3 1.20 0.85 L4 1.10 0.51 2.5 11.6 7 7 2.3 1.5 Packing information Package Tape Width (mm) TO-252 16 Pitch Reel Size mm inch mm inch 8 ± 0.1 0.315 ± 0.004 330 13 Per Reel Packing Quantity 2,500 Marking information " TR06N300LS " = Part No. " ****** " = Date Code Marking Font type: Arial TR06 N300LS ****** 7/8 ® Dated: 02/03/2022 Rev: 02 WTR06N300LS-HAF IMPORTANT NOTICE Our company and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes to improve product design, functions and reliability without further notice to this document and any product described herein. Statements described herein regarding the reliability and suitability of products is for illustrative purposes only. Products specifically described herein are not authorized for use as critical components in life support devices, automobile, military, aviation or aerospace only with the written approval of our company. The information contained herein is presented only as guidance for product use. No license to any intellectual property rights is granted under this document. No responsibility is assumed by our company for any infringement of patents or any other intellectual property rights of third party that may result from the use of the product. 8/8 ® Dated: 02/03/2022 Rev: 02