WTR06N300LS-HAF
N-Channel Enhancement Mode MOSFET
Features
• Low RDS(ON)
• Halogen and Antimony Free(HAF),
RoHS compliant
Drain
Gate
Applications
• Boost converters
• Synchronous rectifiers
• LED backlighting
Key Parameters
Parameter
BVDSS
RDS(ON) Max
VGS(th) typ
Qg typ
Source
1.Gate 2.Drain 3.Source
TO-252 Plastic Package
Value
60
34 @ VGS = 10 V
38 @ VGS = 4.5 V
1.5
19 @ VGS = 10 V
Unit
V
mΩ
V
nC
Absolute Maximum Ratings (at Ta = 25℃ unless otherwise specified)
Parameter
Symbol
Value
Unit
VDS
60
V
VGS
± 20
20
13
V
IDM
50
A
IAS
8.7
A
EAS
3.7
mJ
PD
25
W
Tj, Tstg
- 55 to + 150
℃
Symbol
Max.
Unit
Thermal Resistance from Junction to Case
RθJC
5
℃/W
Thermal Resistance from Junction to Ambient 3)
RθJA
50
℃/W
Drain-Source Voltage
Gate-Source Voltage
Tc = 25℃
Tc = 100℃
Continuous Drain Current
Peak Drain Current,Pulsed 1)
Avalanche Current
Single Pulse Avalanche Energy
2)
Power Dissipation
Tc = 25℃
Operating Junction and Storage Temperature Range
ID
A
Thermal Characteristics
Parameter
1)
Pulse Test: Pulse Width ≤ 100 μs, Duty Cycle ≤ 2%, Repetitive rating, pulse width limited by junction temperature TJ(MAX) = 150°C.
2)
Limited by TJ(MAX), starting TJ = 25 °C, L = 0.1 mH, Rg = 25 Ω, IAS = 8.7 A, VGS = 10 V.
3)
Device Surface Mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate, in a still air.
1/8
®
Dated: 02/03/2022 Rev: 02
WTR06N300LS-HAF
Characteristics at Ta = 25℃ unless otherwise specified
Parameter
Symbol
Min.
Typ.
Max.
Unit
BVDSS
60
-
-
V
IDSS
-
-
1
µA
IGSS
-
-
±100
nA
VGSth
1.2
-
2.5
V
RDS(on)
-
26
-
34
38
mΩ
gfs
-
18
-
S
Rg
-
0.8
-
Ω
Ciss
-
1260
-
pF
Coss
-
47
-
pF
Crss
-
43
-
pF
Qg
-
19
8.7
-
nC
Qgs
-
4.3
-
nC
Qgd
-
2.6
-
nC
td(on)
-
11
-
ns
tr
-
27
-
ns
td(off)
-
10
-
ns
tf
-
2
-
ns
VSD
-
-
1.3
V
Body-Diode Continuous Current
IS
-
-
20
A
Body-Diode Continuous Current, Pulsed
ISM
-
-
50
A
trr
-
7.2
-
ns
Qrr
-
4.5
-
nC
STATIC PARAMETERS
Drain-Source Breakdown Voltage
at ID = 10 mA
Drain-Source Leakage Current
at VDS = 48 V
Gate-Source Leakage Current
at VGS = ± 20 V
Gate-Source Threshold Voltage
at VDS = VGS, ID = 250 µA
Drain-Source On-State Resistance
at VGS = 10 V, ID = 15 A
at VGS = 4.5 V, ID = 10 A
DYNAMIC PARAMETERS
Forward Transconductance
at VDS = 5 V, ID = 15 A
Gate Resistance
at VGS = 0 V, VDS = 0 V, f = 1 MHz
Input Capacitance
at VGS = 0 V, VDS = 30 V, f = 1 MHz
Output Capacitance
at VGS = 0 V, VDS = 30 V, f = 1 MHz
Reverse Transfer Capacitance
at VGS = 0 V, VDS = 30 V, f = 1 MHz
Total Gate Charge
at VDS = 30 V, VGS = 10 V, ID = 15 A
at VDS = 30 V, VGS = 4.5 V, ID = 15 A
Gate Source Charge
at VDS = 30 V, VGS = 10 V, ID = 15 A
Gate Drain Charge
at VDS = 30 V, VGS = 10 V, ID = 15 A
Turn-On Delay Time
at VDS = 30 V, VGS = 10 V, ID = 15 A, Rg = 3.3 Ω
Turn-On Rise Time
at VDS = 30 V, VGS = 10 V, ID = 15 A, Rg = 3.3 Ω
Turn-Off Delay Time
at VDS = 30 V, VGS = 10 V, ID = 15 A, Rg = 3.3 Ω
Turn-Off Fall Time
at VDS = 30 V, VGS = 10 V, ID = 15 A, Rg = 3.3 Ω
Body-Diode PARAMETERS
Drain-Source Diode Forward Voltage
at IS = 1 A, VGS = 0 V
Body Diode Reverse Recovery Time
at IS = 15 A, di/dt = 100 A / µs
Body Diode Reverse Recovery Charge
at IS = 15 A, di/dt = 100 A / µs
2/8
®
Dated: 02/03/2022 Rev: 02
WTR06N300LS-HAF
Electrical Characteristics Curves
Fig. 1 Typical Output Characteristics
Fig. 2 Typical Transfer Characteristics
Fig. 3 On-Resistance vs. Drain Current
Fig. 4 On-Resistance vs. Gate to Source
Fig. 5 On-Resistance vs.Tj
Fig. 6 Typical Body-Diode Forward Characteristics
3/8
®
Dated: 02/03/2022 Rev: 02
WTR06N300LS-HAF
Electrical Characteristics Curves
Fig. 7 Typical Junction Capacitance
Fig. 8 Drain-Source Leakage Current vs. Tj
Fig. 9 V(BR)DSS vs. Junction Temperature
Fig. 10 Gate Threshold Variation vs. Tj
Fig. 12 Safe Operation Area
Fig. 11 Gate Charge
4/8
®
Dated: 02/03/2022 Rev: 02
WTR06N300LS-HAF
Electrical Characteristics Curves
Fig.13 Normalized Maximum Transient Thermal Impedance(zϴJC)
Fig.14 Normalized Maximum Transient Thermal Impedance(zϴJA)
5/8
®
Dated: 02/03/2022 Rev: 02
WTR06N300LS-HAF
Test Circuits
Fig.1-2 Switching Waveform
Fig.1-1 Switching times test circuit
Fig.2-1 Gate charge test circuit
Fig.2-2 Gate charge waveform
Fig.3-1 Avalanche test circuit
Fig.3-2 Avalanche waveform
6/8
®
Dated: 02/03/2022 Rev: 02
WTR06N300LS-HAF
Package Outline (Dimensions in mm)
UNIT
mm
A
2.5
2.1
A1
0.15
0
b
1.0
0.5
b2
1.15
0.65
b3
5.5
4.9
C
0.65
0.4
C2
0.65
0.4
TO-252
D
6.2
5.6
D1
5.4
5.0
Recommended Soldering Footprint
E
6.7
6.1
E1
5.0
4.6
e
e1
2.30
4.60
TYP.
TYP.
H
10.7
9
L
1.78
1.40
L3
1.20
0.85
L4
1.10
0.51
2.5
11.6
7
7
2.3
1.5
Packing information
Package
Tape Width
(mm)
TO-252
16
Pitch
Reel Size
mm
inch
mm
inch
8 ± 0.1
0.315 ± 0.004
330
13
Per Reel Packing Quantity
2,500
Marking information
" TR06N300LS " = Part No.
" ****** " = Date Code Marking
Font type: Arial
TR06
N300LS
******
7/8
®
Dated: 02/03/2022 Rev: 02
WTR06N300LS-HAF
IMPORTANT NOTICE
Our company and its subsidiaries reserve the right to make modifications, enhancements,
improvements, corrections or other changes to improve product design, functions and
reliability without further notice to this document and any product described herein.
Statements described herein regarding the reliability and suitability of products is for
illustrative purposes only. Products specifically described herein are not authorized for use
as critical components in life support devices, automobile, military, aviation or aerospace
only with the written approval of our company.
The information contained herein is presented only as guidance for product use. No
license to any intellectual property rights is granted under this document. No responsibility is
assumed by our company for any infringement of patents or any other intellectual property
rights of third party that may result from the use of the product.
8/8
®
Dated: 02/03/2022 Rev: 02