AP40P04D

AP40P04D -40V P-Channel Enhancement Mode MOSFET Description The AP40P04D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -40V ID =-40 A RDS(ON) < 18mΩ @ VGS=-10V (Type：15mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP40P04D TO-252-3L AP40P04D XXX YYYY 2500 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ -10V1 -40 A ID@TC=100℃ Continuous Drain Current, VGS @ -10V1 -23 A IDM Pulsed Drain Current2 -120 A EAS Single Pulse Avalanche Energy3 125 mJ PD@TC=25℃ Total Power Dissipation4 25 W PD@TA=25℃ Dissipation4 16 W Total Power Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 1 62 ℃/W RθJC Thermal Resistance Junction-Case1 5 ℃/W AP40P04D RVE1.0 永源微電子科技有限公司 1 TSTG AP40P04D -40V P-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -40 -44 --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.023 --- V/℃ RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V , ID=-30A --- 15 18 VGS=-4.5V , ID=-20A --- 18 25 VGS(th) Gate Threshold Voltage -1.0 -1.6 -2.5 △VGS(th) VGS(th) Temperature Coefficient --- 4.74 --- IDSS Drain-Source Leakage Current VDS=-40V , VGS=0V , TJ=25℃ --- --- 1 VDS=-40V , VGS=0V , TJ=55℃ --- --- 5 IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 Qg Total Gate Charge (-4.5V) --- 25 --- --- 11 --- --- 9.5 --- --- 48 --- --- 24 --- --- 88 --- Qgs Gate-Source Charge Qgd Gate-Drain Charge Td(on) Turn-On Delay Time VGS=VDS , ID=-250uA VDS=-20V , VGS=-4.5V , ID=-12A VDD =-15V, RL=15Ω Tr Rise Time Td(off) Turn-Off Delay Time Tf Fall Time --- 9.6 --- Ciss Input Capacitance --- 2760 --- Coss Output Capacitance --- 260 --- Crss Reverse Transfer Capacitance --- 85 --- IS Continuous Source Current1,5 ISM Pulsed Source Current2,5 VSD Voltage2 Diode Forward ID =-1A, VGEN =-10V, RG =6Ω VDS=-20V , VGS=0V , f=1MHz VG=VD=0V , Force Current VGS=0V , IS=-1A , TJ=25℃ Unit mΩ V mV/℃ uA nA nC ns pF --- --- -40 A --- --- -90 A --- --- -1.3 V Note : 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The EAS data shows Max. rating . The test condition is VDD=-32V,VGS=-10V,L=0.1mH,IAS=-30A 4、The power dissipation is limited by 150℃ junction temperature 5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 AP40P04D RVE1.0 永源微電子科技有限公司 AP40P04D -40V P-Channel Enhancement Mode MOSFET Typical Characteristics Fig.1 On Resistance Vs Junction Temperature Fig.3 Capacitance Fig.5 Threshold Voltage Fig.2 On-Resistance Vs.Drain Current Fig.4 On-Resistance Vs. Gate-to-Sourece Voltage Fig.6 On-Region Characteristics 3 AP40P04D RVE1.0 永源微電子科技有限公司 AP40P04D -40V P-Channel Enhancement Mode MOSFET Fig.7 Gate Charge Fig.9 Safe Operating Area Fig.8 Body-diode Characteristice Fig.10 Single Pluse Maximum Power Dissipation Fig.11 Normalized Maximum Transient Thermal Impedance 4 AP40P04D RVE1.0 永源微電子科技有限公司 AP40P04D -40V P-Channel Enhancement Mode MOSFET Package Mechanical Data:TO-252-3L E Dimensions A B2 C2 H D L V1 C B V1 V2 A2 V1 Typ. Min. Typ. Max. A 2.10 2.50 0.083 0.098 0 0.10 0 0.004 B 0.66 0.86 0.026 0.034 B2 5.18 5.48 0.202 0.216 C 0.40 0.60 0.016 0.024 C2 0.44 0.58 0.017 0.023 D 5.90 6.30 0.232 5.30REF E 6.40 E1 4.63 0.248 0.209REF 6.80 0.252 0.268 0.182 G 4.47 4.67 0.176 0.184 H 9.50 10.70 0.374 0.421 L 1.09 1.21 0.043 0.048 L2 1.35 1.65 0.053 0.065 6° 0° 7° V1 L2 Inches Max. A2 D1 DETAIL A E1 Millimeters Min. G D1 Ref. V2 7° 0° 6° DETAIL A TO-252 Reel Spectification-TO-252 B D 0 P0 P2 Dimensions T E Ref. A B0 A D1 W F t1 K0 P1 A0 B B B 5° Φ3 29 A A 20 Φ13 Millimeters Inches Min. Typ. Max. Typ. Max. W 15.90 16.00 16.10 E 1.65 1.75 1.85 0.626 0.630 0.634 0.065 0.069 F 7.40 7.50 7.60 0.073 0.291 0.295 0.299 D0 1.40 1.50 D1 1.40 1.50 1.60 0.055 0.059 0.063 1.60 0.055 0.059 P0 3.90 0.063 4.00 4.10 0.154 0.157 P1 7.90 0.161 8.00 8.10 0.311 0.315 0.319 P2 1.90 A0 6.85 2.00 2.10 0.075 0.079 0.083 6.90 7.00 0.270 0.271 0.276 B0 10.45 10.50 10.60 0.411 0.413 0.417 K0 2.68 2.78 T 0.24 0.105 0.109 0.113 t1 0.10 10P0 39.80 2.88 0.27 Min. 0.009 0.011 0.004 40.00 40.20 1.567 1.575 1.583 5 AP40P04D RVE1.0 永源微電子科技有限公司 AP40P04D -40V P-Channel Enhancement Mode MOSFET Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment, adopt safety measures so that these kinds of accidents or events cannot occur. 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APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use. 6 AP40P04D RVE1.0 永源微電子科技有限公司 AP40P04D -40V P-Channel Enhancement Mode MOSFET Edition Date Change Rve1.0 2021/8/8 Initial release Copyright Attribution“APM-Microelectronice” 7 AP40P04D RVE1.0 永源微電子科技有限公司