YFW30N06AD

YFW30N06AD/NF 60V N-CHANNEL CHANNEL ENHANCEMENT MODE MOSFET MAIN CHARACTERISTICS ID 30A VDSS 60V RDSON-typ(@VGS=10V) ＜28m 28mΩ(Type:18 mΩ) Features  Fast Switching  Low ON Resistance  Low Gate Charge  100% Single Pulse avalanche energy Test RoHS2011/65/EUdirectives  LeadfreeincomplywithEURoHS2011/65/EU TO TO-252 Mechanical Data  Case: Molded plastic  Mounting Position: Any  Molded Plastic: UL Flammability Classification Rating 94V 94V-0  Solder bath temperature275℃maximum,10s maximum,10s per JESD22 JESD22-106 PDFN5*6 PDFN5*6-8L Product Specification Classification Part Number Package Marking Pack YFW30N06AD TO TO-252 YFW 30N06AD XXXXX 2500PCS/Tape YFW30N06NF PDFN5*6 PDFN5*6-8L YFW 30N06NF XXXXX 5000PCS/Tape www.yfwdiode.com 1/5 GuangDong YFW Electronics Co, Ltd. YFW30N06AD/NF Maximum Ratings at Tc=25°C unless otherwise specified Characteristics Symbols Value Units Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V Continue Drain Current ID 30 A Pulsed Drain Current (Note1) IDM 90 A Power Dissipation PD 35 W Single Pulse Avalanche Energy (Note5) EAS 50 mJ Operating Temperature Range TJ 150 °C Storage Temperature Range TSTG -55 to +150 °C Thermal Resistance, Junction to Case RθJC 3 °C/W Thermal Resistance, Junction to Ambient RθJA 62 °C/W Maximum Ratings at Tc=25°C unless otherwise specified Characteristics Drain-Source Breakdown Voltage Drain-Source Leakage Current Test Condition Symbols Min Typ Max Units VGS = 0 V,ID = 250 μA BVDSS 60 - - V - - 1 UA - - 10 UA VDS = 60 V, VGS = 0 V , IDSS VDS=60V Tc=125°C Gate Leakage Current Gate-Source Threshold Voltage Drain-Source On-State Resistance(Note3) Forward Transconductance VGS = ± 20 V, VDS = 0 V IGSS - - ±100 nA VDS = VGS , ID = 250 μA VGS(th) 1 - 2.5 V - 18 28 mΩ 26 40 mΩ S VGS = 10 V, ID = 25 A VGS = 4.5 V, ID = 10 A VDS = 50 V, ID = 25A Input Capacitance Output Capacitance VGS = 0 V, VDS = 25 V, f =1MHz Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-Off Delay Time VDS =30V ,RL=1.5Ω VGS = 10 V,RG = 3Ω, (Note3,4) Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge www.yfwdiode.com VDS = 30A, ID = 20 V, VGS = 10 V(Note3,4) RDS(on) gfs - 20 - Ciss - 1750 - Coss - 85 - Crss - 62 - td(ON) - 6 - tr - 3.1 - td(OFF) - 18 - tf - 3.1 - QG - 30 - QGS - 5.5 - QGD - 8.6 - 2/5 pF nS nC GuangDong YFW Electronics Co, Ltd. YFW30N06AD/NF Source-Drain Diode Characteristics at Ta=25°C unless otherwise specified Characteristics Test Condition Symbols Min Typ Max Units IS - - 30 A ISM - - 90 A ISD = 30 A VSD - - 1.2 V IS = IF ISD =20 A, VGS = 0 V, dIF / dt = 100 A/μs(Note3) trr - 40 - nS Qrr - 65 - uC Maximun Body-Diode Continuous Current(Note2) Maximun Body-Diode Pulsed Current Drain-Source Diode Forward Voltage(Note3) Reverse Recovery Time Reverse Recovery Charge Note: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition:Tj=25 ,VDD= ℃ 30V,VG=10V,L=0.1mH,Rg www.yfwdiode.com 3/5 GuangDong YFW Electronics Co, Ltd. YFW30N06AD/NF Ratings and Characteristic Curves www.yfwdiode.com 4/5 GuangDong YFW Electronics Co, Ltd. YFW30N06AD/NF Package Outline Dimensions millimeters TO-252 Dim. A B C D D1 E E1 E2 B1 B2 O L1 L2 L3 Min. 2.1 0.95 0.4 6.4 5.1 5.8 Max. 2.5 1.55 0.6 6.7 5.8 6.4 Typ 2.3 Typ 4.6 0.6 0.75 -9.0 1.3 0.70 0.8 0.95 0.15 11.0 1.7 0.95 All Dimensions in millimeter PDFN5*6-8L Dim. A B C C1 C2 E L L1 L2 R Min. 4.8 0.25 1 Max. 5.2 0.35 1.2 Typ 0.254 Typ 0.254 Typ 1.27 6 5.7 6.3 6 Max 0.2 Typ 13° All Dimensions in millimeter www.yfwdiode.com 5/5 GuangDong YFW Electronics Co, Ltd.