AP5N20D-H

厂商：
APM-MICROELECTRONICS(永源微)
封装：
TO-252-2(DPAK)
描述：
类型:N沟道;漏源电压(Vdss):200V;连续漏极电流(Id):5A;功率(Pd):46W;导通电阻(RDS(on)@Vgs,Id):530mΩ@10V,2.5A;阈值电压(Vgs(th)@Id)...

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AP5N20D-H 数据手册

AP5N20D-H 200V N-Channel Enhancement Mode MOSFET Description The AP5N20D-H is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features VDS =200V,ID =5A RDS(ON)

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