AP5N20D-H

厂商：
APM-MICROELECTRONICS(永源微)
封装：
TO252
描述：
类型:N沟道;漏源电压(Vdss):200V;连续漏极电流(Id):5A;功率(Pd):46W;导通电阻(RDS(on)@Vgs,Id):530mΩ@10V,2.5A;阈值电压(Vgs(th)@Id)...

数据手册：

下载AP5N20D-H.pdf

立即购买

数据手册
价格&库存

AP5N20D-H 数据手册

AP5N20D-H 200V N-Channel Enhancement Mode MOSFET Description The AP5N20D-H is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features VDS =200V,ID =5A RDS(ON)

下载 PDF

AP5N20D-H 价格&库存

-> 查询更多价格&库存

很抱歉，暂时无法提供与“AP5N20D-H”相匹配的价格&库存，您可以联系我们找货

免费人工找货

搜索历史

AP5N20D-H

推荐型号

相关技术文章