APG40N10D

APG40N10D 100V N-Channel Enhancement Mode MOSFET Description The APG40N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID =40A RDS(ON) < 20mΩ @ VGS=10V Application Consumer electronic power supply Motor control Synchronous-rectification Isolated DC Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) APG40N10D TO-252-3L APG40N10D XXX YYYY 2500 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain source voltage 100 V VGS Gate source voltage ±20 V ID Continuous drain current1), TC=25 ℃ 40 A ID, pulse Pulsed drain current2), TC=25 ℃ 120 A PD Power dissipation3), TC=25 ℃ 71 W EAS Single pulsed avalanche energy5) 57 mJ Tstg，Tj Operation and storage temperature -55 to 150 ℃ RθJC Thermal resistance, junction-case 1.76 ℃/W RθJA Thermal resistance, junction-ambient4) 62 °C/W 1 APG40N10D Rve2.0 臺灣永源微電子科技有限公司 APG40N10D 100V N-Channel Enhancement Mode MOSFET Electrical Characteristics (TC=25℃unless otherwise noted) Symbol Parameter Test condition Min. Typ. BVDSS Drain-source breakdown voltage VGS=0 V, ID=250 μA 100 107 VGS(th) Gate threshold voltage VDS=VGS, ID=250 μA 1.2 1.5 2.5 V VGS=10 V, ID=10 A 13.8 20.0 mΩ VGS=4.5 V, ID=7 A 17.4 26.0 mΩ RDS(ON) RDS(ON) Drain-source on-state resistance Drain-source on-state resistance Max. Unit V IGSS Gate-source leakage current VGS=±20 V ±100 nA IDSS Drain-source leakage current VDS=100 V, VGS=0 V 1 uA Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance td(on) Turn-on delay time VGS=0 V, VDS=50 V, ƒ=100 kHz VGS=10 V, VDS=50 V, RG=10 Ω, ID=5 A 1003.9 pF 185.4 pF 9.8 pF 16.6 ns 3.8 ns 75.5 ns tr Rise time td(off) Turn-off delay time tf Fall time 46 ns Qg Total gate charge 16.2 nc Qgs Gate-source charge 2.8 nc Qgd Gate-drain charge 4.1 nc Vplateau Gate plateau voltage 3 V IS Diode forward current 30 A ISP Pulsed source current 90 A trr Reverse recovery time Qrr Reverse recovery charge Irrm Peak reverse recovery current ID=5 A, VDS=50V, VGS=10V VGS