APG12N10D

APG12N10D 100V N-SGT Enhancement Mode MOSFET General Description APG12N10D use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity or Invertors Applications Consumer electronic power supply Motor control Synchronous-rectification Isolated DC Synchronous-rectification applications Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) APG12N10D TO-252 APG12N10D XXX YYYY 2500 Absolute Maximum Ratings at Tj=25℃ unless otherwise noted Parameter Symbol Value Unit Drain source voltage VDS 100 V Gate source voltage VGS ±20 V Continuous drain current1), TC=25 ℃ ID 12 A Pulsed drain current2), TC=25 ℃ ID, pulse 24 A Power dissipation3), TC=25 ℃ PD 17 W Single pulsed avalanche energy5) EAS 1.2 mJ Operation and storage temperature Tstg，Tj -55 to 150 ℃ Thermal resistance, junction-case RθJC 7.4 ℃/W Thermal resistance, junction-ambient4) RθJA 62 ℃/W 1 APG12N10D Rve1.1 臺灣永源微電子科技有限公司 APG12N10D 100V N-SGT Enhancement Mode MOSFET Electrical Characteristics at Tj=25 ℃ unless otherwise specified Symbol Parameter Test condition Min. Typ. Max. Unit BVDSS Drain-source breakdown voltage VGS=0 V, ID=250 μA 100 111 VGS(th) Gate threshold voltage VDS=VGS, ID=250 μA 1.2 2.0 2.5 V RDS(ON) Drain-source on-state resistance VGS=10 V, ID=5 A 105 125 mΩ RDS(ON) Drain-source on-state resistance VGS=4.5 V, ID=3 A 115 145 mΩ IGSS Gate-source leakage current IDSS Drain-source leakage current Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance td(on) Turn-on delay time tr td(off) tf 100 VGS=-20 V -100 VDS=100 V, VGS=0 V 1 nA uA 206.1 pF VDS=50 V, 28.9 pF ƒ=100 kHz 1.4 pF 14.7 ns VGS=0 V, VGS=10 V, VDS=50 V, 3.5 ns Turn-off delay time RG=2 Ω, 20.9 ns 2.7 ns 4.3 nC 1.5 nC 1.1 nC 5.0 V Fall time Total gate charge Qgs Gate-source charge Vplateau VGS=20 V Rise time Qg Qgd V Gate-drain charge ID=5 A ID=5 A, VDS=50 V, VGS=10 V Gate plateau voltage IS Diode forward current 7 ISP Pulsed source current VGS