AP100N03AD

AP100N03AD 30V N-Channel Enhancement Mode MOSFET Description The AP100N03AD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS=30V ID =100A RDS(ON) < 6.0mΩ @ VGS=10V （Type：4.8mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP100N03AD TO-252-3L AP100N03AD XXXX YYYY 2500 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 100 A ID@TC=75℃ Continuous Drain Current, VGS @ 10V1 59 A IDM Pulsed Drain Current2 240 A EAS Single Pulse Avalanche Energy3 56 mJ IAS Avalanche Current 15 A 46 W Dissipation4 Total Power PD@TA=25℃ Total Power Dissipation4 2.72 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ 62 ℃/W 2.72 ℃/W RθJA Thermal Resistance Junction-Ambient RθJC Junction-Case1 AP100N03AD RVE1.0 Thermal Resistance 1 永源微電子科技有限公司 1 PD@TC=25℃ AP100N03AD 30V N-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter Test Condition Min. Typ. Max. Units V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID=250μA 30 32 - V IDSS Zero Gate Voltage Drain Current VDS =30V, VGS = 0V, - - 1.0 μA IGSS Gate to Body Leakage Current VDS =0V,VGS = ±20V - - ±100 nA VGS(th) Gate Threshold Voltage VDS= VGS, ID=250μA 1.0 1.5 2.5 V RDS(on) Static Drain-Source on-Resistance VGS =10V, ID =30A - 4.8 6.0 VGS =4.5V, ID =20A - 7.5 12 Ciss Input Capacitance - 1614 - pF Coss Output Capacitance - 245 - pF Crss Reverse Transfer Capacitance - 215 - pF Qg Total Gate Charge - 33.7 - nC Qgs Gate-Source Charge - 8.5 - nC Qgd Gate-Drain(“Miller”) Charge - 7.5 - nC td(on) Turn-on Delay Time - 7.5 - ns - 14.5 - ns - 35.2 - ns - 9.6 - ns tr Turn-on Rise Time td(off) Turn-off Delay Time tf Turn-off Fall Time VDS =15V, VGS =0V, f = 1.0MHz VDS =15V, ID =30A, VGS =10V VDS=15V, ID=30A, RGEN=3Ω, VGS =10V mΩ IS Maximum Continuous Drain to Source Diode Forward Current - - 70 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 280 A - - 1.2 V VSD Drain to Source Diode Forward Voltage VGS = 0V, IS=30A Note : 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=15A 4、The power dissipation is limited by 175℃ junction temperature 5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 AP100N03AD RVE1.0 永源微電子科技有限公司 AP100N03AD 30V N-Channel Enhancement Mode MOSFET Typical Characteristics Figure1: Output Characteristics Figure 3:On-resistance vs. Drain Current Figure 5: Gate Charge Characteristics Figure 2: Typical Transfer Characteristics Figure 4: Body Diode Characteristics Figure 6: Capacitance Characteristics 3 AP100N03AD RVE1.0 永源微電子科技有限公司 AP100N03AD 30V N-Channel Enhancement Mode MOSFET Figure 7: Normalized Breakdown Voltage vs. Junction Temperature Figure 9: Maximum Safe Operating Area vs. Case Temperature Figure 8: Normalized on Resistance vs Junction Temperature Figure 10: Maximum Continuous Drain Current Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Ca 4 AP100N03AD RVE1.0 永源微電子科技有限公司 AP100N03AD 30V N-Channel Enhancement Mode MOSFET Package Mechanical Data:TO-252-3L E Dimensions A B2 C2 Ref. L V1 Min. 0.083 0.098 A2 0 0.10 0 0.004 B 0.66 0.86 0.026 0.034 B2 5.18 5.48 0.202 0.216 C 0.40 0.60 0.016 0.024 C2 0.44 0.58 0.017 0.023 D 5.90 6.30 0.232 0.248 6.80 0.252 D H DETAIL A V2 D1 V1 A2 V1 E1 5.30REF D1 G Max. 0.209REF E 6.40 E1 4.63 G 4.47 4.67 H 9.50 10.70 0.374 0.421 L 1.09 1.21 0.043 0.048 L2 1.35 1.65 0.053 V2 0.268 0.182 0.176 7° V1 L2 Typ. Max. 2.50 Min. C Typ. Inches 2.10 A B Millimeters 0.184 0.065 7° 0° 6° 0° 6° DETAIL A TO-252 Reel Spectification-TO-252 B D 0 P0 P2 Dimensions T E Ref. A B0 A D1 W F t1 K0 P1 A0 B B B 5° Φ3 29 A A 20 Φ13 Millimeters Inches Min. Typ. Max. Min. Typ. Max. W 15.90 16.00 16.10 0.626 0.630 0.634 E 1.65 1.75 1.85 0.065 0.069 0.073 F 7.40 7.50 7.60 0.291 0.295 0.299 D0 1.40 1.50 1.60 0.055 0.059 0.063 D1 1.40 1.50 1.60 0.055 0.059 0.063 P0 3.90 4.00 4.10 0.154 0.157 0.161 P1 7.90 8.00 8.10 0.311 0.315 0.319 P2 1.90 2.00 2.10 0.075 0.079 0.083 A0 6.85 6.90 7.00 0.270 0.271 0.276 B0 10.45 10.50 10.60 0.411 0.413 0.417 K0 2.68 2.78 2.88 0.105 0.109 0.113 T 0.24 t1 0.10 10P0 39.80 0.27 0.009 0.011 0.004 40.00 40.20 1.567 1.575 1.583 5 AP100N03AD RVE1.0 永源微電子科技有限公司 AP100N03AD 30V N-Channel Enhancement Mode MOSFET Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design. 5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. 6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use. 6 AP100N03AD RVE1.0 永源微電子科技有限公司 AP100N03AD 30V N-Channel Enhancement Mode MOSFET Edition Date Change Rve1.0 2021/5/1 Initial release Copyright Attribution“APM-Microelectronice” 7 AP100N03AD RVE1.0 永源微電子科技有限公司