AP50P10D
-100V P-Channel Enhancement Mode MOSFET
Description
The AP50P10D uses advanced trench technology
and design to provide excellent RDS(ON) with low gat
e charge. It can be used in a wide variety of applications.
It is ESD protested.
General Features
VDS =-100V,ID =-50A
RDS(ON)
很抱歉，暂时无法提供与“AP50P10D”相匹配的价格&库存，您可以联系我们找货
免费人工找货
