AP90P01D

AP90P01D 12V P-Channel Enhancement Mode MOSFET Description The AP90P01D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS=12V ID =90A RDS(ON) < 4.5mΩ @ VGS=4.5V （Type：3.5mΩ） Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP90P01D TO-252-3L AP90P01D XXX YYYY 2500 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage -12 V VGS Gate-Source Voltage ±12 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 -90 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 -54 A IDM Drain Current – Pulsed1 -240 A IAS Avalanche Current 50 A EAS Single Pulsed Avalanche Energy 560 mJ TJ, TSTG Operating and Storage Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction to ambient 62.5 ℃/W RθJC Thermal Resistance Junction to Case 3 ℃/W 1 AP90P01D RVE1.0 永源微电子科技有限公司 AP90P01D 12V P-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V , ID=-250uA -12 -18 --- V △BVDSS/△TJ BVDSS Temperature Coefficient Reference to 25℃ , ID=-1mA --- -0.008 --- V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=-4.5V , ID=-20A --- 3.5 4.5 VGS=-2.5V , ID=-20A --- 4.8 6.0 VGS(th) Gate Threshold Voltage -0.4 -0.6 -1.0 V △VGS VGS(th) Temperature Coefficient --- -3.44 --- mV/℃ IDSS Drain-Source Leakage Current VDS=-20V , VGS=0V , TJ=25℃ --- --- -1 uA VDS=-16V ,VGS=0V ,TJ=125℃ --- --- -30 uA IGSS Gate-Source Leakage Current VGS=±12V , VDS=0V --- --- ±500 nA gfs Forward Transconductance VDS=-10V , IS=-3A --- 30 --- S --- 149 225 --- 14.4 22 --- 42.8 65 --- 21.2 42 --- 20.6 40 --- 26 52 --- 400 600 --- 6800 --- 769 --- 726 --- 2.6 --- -- -- -90 -- -- -180 -- -- -1 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Td(on) Turn-On Delay Time Tr Rise Time Td(off) Turn-Off Delay Time Tf Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance IS Contineous Source Current ISM Pulsed Source Current VGS=VDS , ID =-250uA VDS=-16V , VGS=-4.5V , ID=5A VDD=-15V , VGS=-4.5V , RG=25 ID=-1A VDS=-15V , VGS=0V , F=1MHz VGS=0V, VDS=0V, F=1MHz Vg=Vd=0V, Force Current VSD Diode Forward Voltage Vgs=0V Is=1A Tj=25℃ Note : 1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. mΩ nC nS pF Ω A V 2、The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3、The EAS data shows Max. rating . The test condition is VDD=8V,VGS=4.5V,L=0.1mH,IAS =50A 4、The power dissipation is limited by 150℃ junction temperature 5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation. 2 AP90P01D RVE1.0 永源微电子科技有限公司 AP90P01D 12V P-Channel Enhancement Mode MOSFET Typical Characteristics Figure 1：Power Dissipation Figure 3：Output Characteristics Figure 5：Transfer Characteristics Figure 2：Drain Current Figure 4：Drain-Source On-Resistance Figure 6：Drain-Source On-Resistance 3 AP90P01D RVE1.0 永源微电子科技有限公司 AP90P01D 12V P-Channel Enhancement Mode MOSFET Figure 7：Rdson vs Vgs Figure 9：Gate Charge Figure 8：Capacitance vs Vds Figure 10：Sourece-Drain Diode Forward Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 AP90P01D RVE1.0 永源微电子科技有限公司 AP90P01D 12V P-Channel Enhancement Mode MOSFET Package Mechanical Data:TO-252-3L E Dimensions A B2 Ref. C2 Millimeters L V1 Min. 2.50 0.083 0.098 A2 0 0.10 0 0.004 B 0.66 0.86 0.026 0.034 B2 5.18 5.48 0.202 0.216 C 0.40 0.60 0.016 0.024 C2 0.44 0.58 0.017 0.023 D 5.90 6.30 0.232 0.248 6.80 0.252 Min. D H C DETAIL A V2 D1 V1 A2 V1 E1 5.30REF D1 G Max. 0.209REF E 6.40 E1 4.63 G 4.47 4.67 H 9.50 10.70 0.374 0.421 L 1.09 1.21 0.043 0.048 L2 1.35 1.65 0.053 0.176 7° V2 0.268 0.182 V1 L2 Typ. Max. 2.10 A B Typ. Inches 0° 0.184 0.065 7° 6° 0° 6° DETAIL A TO-252 Reel Spectification-TO-252 B D 0 P0 P2 Dimensions T E Ref. A B0 A D1 W F t1 K0 P1 A0 B B B 5° Φ3 29 A A 20 Φ13 Millimeters Inches Min. Typ. Max. Min. Typ. Max. W 15.90 16.00 16.10 0.626 0.630 0.634 E 1.65 1.75 1.85 0.065 0.069 0.073 F 7.40 7.50 7.60 0.291 0.295 0.299 D0 1.40 1.50 1.60 0.055 0.059 0.063 0.063 D1 1.40 1.50 1.60 0.055 0.059 P0 3.90 4.00 4.10 0.154 0.157 0.161 P1 7.90 8.00 8.10 0.311 0.315 0.319 P2 1.90 2.00 2.10 0.075 0.079 0.083 A0 6.85 6.90 7.00 0.270 0.271 0.276 B0 10.45 10.50 10.60 0.411 0.413 0.417 K0 2.68 2.78 2.88 0.105 0.109 0.113 T 0.24 t1 0.10 10P0 39.80 0.27 0.009 0.011 0.004 40.00 40.20 1.567 1.575 1.583 5 AP90P01D RVE1.0 永源微电子科技有限公司 AP90P01D 12V P-Channel Enhancement Mode MOSFET Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment, adopt safety measures so that these kinds of accidents or events cannot occur. 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APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use. 6 AP90P01D RVE1.0 永源微电子科技有限公司 AP90P01D 12V P-Channel Enhancement Mode MOSFET Edition Date Change Rve1.0 2020/5/1 Initial release Copyright Attribution“APM-Microelectronice” 7 AP90P01D RVE1.0 永源微电子科技有限公司