AP15N10D

AP15N10D 100V N-Channel Enhancement Mode MOSFET Description The AP15N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID =19.3A RDS(ON) < 85mΩ @ VGS=10V (Type：65mΩ) Application Lithium battery protection Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP15N10D TO-252-3L AP15N10D XXX YYYY 2500 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Drain Current, VGS @ 10V 19.3 A ID@TC=100℃ Drain Current, VGS @ 10V 10 A IDM Pulsed Drain Current1 57.9 A PD@TC=25℃ Total Power Dissipation 30 W PD@TA=25℃ Total Power Dissipation3 2.7 W EAS Single Pulse Avalanche Energy4 7 mJ TSTG TJ Storage Temperature Range -55 to 150 ℃ Operating Junction Temperature Range -55 to 150 ℃ RθJA Maximum Thermal Resistance, Junctionambient 55 ℃/W RθJC Maximum Thermal Resistance, Junction-case 5.1 ℃/W 1 AP15N10D RVE3.1 永源微電子科技有限公司 AP15N10D 100V N-Channel Enhancement Mode MOSFET Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 100 107 - V IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V, - - 1.0 μA IGSS Gate to Body Leakage Current VDS=0V, VGS=±20V - - ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 1.2 1.85 2.5 V RDS(on) Static Drain-Source on-Resistance note3 VGS=10V, ID=5A - 65 85 mΩ VGS=4.5V, ID=3A - 75 100 mΩ g fs Forward Transconductance RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Electrical Qgd Gate-Drain(“Miller”) Charge td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf Turn-off Fall Time IS Continuous Source Current1,5 ISM Pulsed Source Current2,5 VSD Diode Forward Voltage2 V DS =5V , I D =5A VDS = 0V, VGS =0V,f =1MHz VDS=15V, VGS=0V, f=1.0MHz VDS=50V, ID=5A, VGS=10V VDS=30V, ID=5A, RG=1.8Ω, VGS=10V VG=VD=0V , Force Current VGS=0V, IS=10A 14 S 3 Ω - 1100 - pF - 55 - pF - 40 - pF - 11.9 - nC - 2.8 - nC - 1.7 - nC - 3.8 - ns - 25.8 - ns - 16 - ns - 8.8 - ns - - 14.6 A - - 25 A - - 1.2 V Notes: 1、The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2、The data tested by pulsed , pulse width ≤ 300us , duty cycle ≤ 2% 3、The EAS data shows Max. rating . The test condition is VDD =80V,VGS =10V,L=0.1mH,I AS =7A 4、The power dissipation is limited by 150℃ junction temperature 5、The data is theoretically the same as I D and I DM , in real applications , should be limited by total power dissipation 2 AP15N10D RVE3.1 永源微電子科技有限公司 AP15N10D 100V N-Channel Enhancement Mode MOSFET Typical Characteristics 100 25 5 VGS=10V VGS=7V 20 ID Drain Current (A) VGS=5V 15 90 VGS=4.5V 80 10 70 5 VGS=3V 60 0 0 2 4 6 VDS , Drain-to-Source Voltage (V) Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage 10 IS Source Current(A) 8 6 TJ=150℃ 4 TJ=25℃ 2 0 0.00 0.25 0.50 0.75 1.00 VSD , Source-to-Drain Voltage (V) Fig.4 Gate-Charge Characteristics Fig.3 Forward Characteristics Of Reverse diode 2.5 Normalized On Resistance Normalized VGS(th) (V) 1.8 2.0 1.4 1.5 1 0.6 1.0 0.2 0.5 -50 0 50 100 TJ ,Junction Temperature (℃ ) AP15N10D RVE3.1 -50 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ 永源微電子科技有限公司 3 Fig.5 Normalized VGS(th) vs. TJ 150 AP15N10D 100V N-Channel Enhancement Mode MOSFET 10000 100.00 F=1.0MHz 10us 100us 10.00 1ms 1000 ID (A) Capacitance (pF) Ciss 10ms 100ms 1.00 100 DC Coss 0.10 TC=25℃ Single Pulse Crss 10 0.01 1 5 9 13 17 21 25 0.1 1 10 VDS , Drain to Source Voltage (V) 100 1000 VDS (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 P DM 0.01 T ON T SINGLE D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff AP15N10D RVE3.1 11 Unclamped Inductive Switching Waveform 4 10 Switching Time Waveform VGS 永源微電子科技有限公司 AP15N10D 100V N-Channel Enhancement Mode MOSFET Package Mechanical Data E Dimensions A B2 Ref. C2 H D L V1 C B DETAIL A V1 V2 A2 V1 E1 Typ. Min. Typ. Max. A 2.10 2.50 0.083 0.098 0 0.10 0 0.004 B 0.66 0.86 0.026 0.034 B2 5.18 5.48 0.202 0.216 C 0.40 0.60 0.016 0.024 C2 0.44 0.58 0.017 0.023 D 5.90 6.30 0.232 5.30REF E 6.40 E1 4.63 0.248 0.209REF 6.80 0.252 0.268 0.182 G 4.47 4.67 0.176 0.184 H 9.50 10.70 0.374 0.421 L 1.09 1.21 0.043 0.048 L2 1.35 1.65 0.053 0.065 6° 0° 7° V1 L2 Inches Max. A2 D1 G D1 Millimeters Min. V2 0° 7° 6° DETAIL A TO-252 Reel Spectification-TO-252 B D 0 P0 P2 Dimensions T E Ref. A B0 A D1 W F t1 K0 P1 A0 B B B 5° 20 Φ3 29 A A Φ13 Millimeters Inches Min. Typ. Max. Min. Typ. Max. W 15.90 16.00 16.10 0.626 0.630 0.634 E 1.65 1.75 1.85 0.065 0.069 0.073 F 7.40 7.50 7.60 0.291 0.295 0.299 D0 1.40 1.50 1.60 0.055 0.059 0.063 D1 1.40 1.50 1.60 0.055 0.059 0.063 P0 3.90 4.00 4.10 0.154 0.157 0.161 P1 7.90 8.00 8.10 0.311 0.315 0.319 P2 1.90 2.00 2.10 0.075 0.079 0.083 0.276 A0 6.85 6.90 7.00 0.270 0.271 B0 10.45 10.50 10.60 0.411 0.413 0.417 K0 2.68 2.78 2.88 0.105 0.109 0.113 T 0.24 t1 0.10 10P0 39.80 0.27 0.009 0.011 0.004 40.00 40.20 1.567 1.575 1.583 5 AP15N10D RVE3.1 永源微電子科技有限公司 AP15N10D 100V N-Channel Enhancement Mode MOSFET Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design. 5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. 6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use. 6 AP15N10D RVE3.1 永源微電子科技有限公司 AP15N10D 100V N-Channel Enhancement Mode MOSFET Edition Date Change Rve3.0 2018/1/31 Initial release Rve3.1 2021/1/3 Reduce RDS(on) Copyright Attribution“APM-Microelectronice” 7 AP15N10D RVE3.1 永源微電子科技有限公司