APJ14N65D

APJ14N65D (AP65R650) 650V N-Channel Enhancement Mode MOSFET Description The APJ14N65D is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features VDS = 650V （Type：730V） IDM =14A RDS(ON) < 650mΩ @ VGS=10V （Type：560mΩ） Application Uninterruptible Power Supply(UPS) Power Factor Correction (PFC) Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) APJ14N65D TO-252-3L APJ14N65D XXX YYYY 1000 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Value Unit VDSS Drain-Source Voltage (VGS = 0V) 650 V ID Continuous Drain Current 8 A 14 A IDM Pulsed Drain Current (note1) VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy (note2) 125 mJ PD Power Dissipation (TC = 25ºC) 25.5 W -55~+150 ºC TJ, Tstg Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Case 4.9 ºC/W RthJA Thermal Resistance, Junction-to-Ambient 49 ºC/W APJ14N65D RVE1.0 永源微電子科技有限公司 1 RthJC APJ14N65D (AP65R650) 650V N-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Parameter Test conditions Min. Typ. Max. Unit BVDSS Drain to source breakdown voltage VGS=0V, ID=250uA 650 700 -- V -- 0.7 -- V/oC VDS=650V, VGS=0V -- -- 1 uA VDS=520V, TC=125oC -- -- 50 uA Gate to source leakage current, forward VGS=30V, VDS=0V -- -- 100 nA Gate to source leakage current, reverse VGS=-30V, VDS=0V -- -- -100 nA VGS(TH) Gate threshold voltage VDS=VGS, ID=250uA 2.5 3.3 4.5 V RDS(ON) Drain to source on state resistance VGS=10V, ID =3.2A -- 560 650 mΩ Ciss Input capacitance -- 438 -- Coss Output capacitance -- 19.5 -- Crss Reverse transfer capacitance -- 1.32 -- td(on) Turn on delay time -- 84.8 -- tr Rising time -- 25.2 -- td(off) Turn off delay time -- 227.6 -- tf Fall time -- 26.8 -- Qg Total gate charge -- 11 Qgs Gate-source charge -- 2.1 -- Qgd Gate-drain charge -- 5.6 -- IS Continuous source current -- -- 11 A ISM Pulsed source current Integral reverse p-n Junction diode in the MOSFET -- -- 44 A VSD Diode forward voltage drop. IS=3.2A, VGS=0V -- 0.7 1.5 V Trr Reverse recovery time -- 313 -- ns Qrr Reverse recovery Charge -- 0.877 -- uC ΔBVDSS / ΔTJ Breakdown voltage temperature coefficient IDSS Drain to source leakage current IGSS ID=250uA, referenced to 25oC VGS=0V, VDS=100V, f=1MHz VDS=400V, ID=3.2A， RG=4.7Ω , VGS=10V VDS=480V, VGS=10V, ID=3.2A IS=3.2A, VGS=0V, Vdd=400V, dIF/dt=100A/us, pF ns nC Note : 1、The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2、The EAS data shows Max. rating . L=0.5mH, IAS =3.2A, VDD =50V, RG=25Ω 3、The test condition is Pulse Test: ISD ≤ ID, di/dt = 100A/us, VDD≤ BVDSS, Starting at TJ =25℃ 4、The power dissipation is limited by 150℃ junction temperature 5、The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 2 APJ14N65D RVE1.0 永源微電子科技有限公司 APJ14N65D (AP65R650) 650V N-Channel Enhancement Mode MOSFET Typical Characteristics Figure1: Power dissipation (Non FullPAK) Figure2: Power dissipation (FullPAK) Figure3:Max. transient thermal impedance Figure4:Max. transient thermal impedance Figure5: Safe operating area (Non FullPAK) Figure6: Safe operating area (FullPAK) 3 APJ14N65D RVE1.0 永源微電子科技有限公司 APJ14N65D (AP65R650) 650V N-Channel Enhancement Mode MOSFET Figure 7: Typ. outp ut characteristics Figure9 : Typ. drain-source on-state resistance Figure 11: Type. transfer characteristics Figure8 : Typ. output characteristics Figure 10: drain -source on-state resistance Figure 12: Type. gate charge 4 APJ14N65D RVE1.0 永源微電子科技有限公司 APJ14N65D (AP65R650) 650V N-Channel Enhancement Mode MOSFET Package Mechanical Data:TO-252-3L E Dimensions A B2 C2 Ref. L V1 Min. 0.083 0.098 A2 0 0.10 0 0.004 B 0.66 0.86 0.026 0.034 B2 5.18 5.48 0.202 0.216 C 0.40 0.60 0.016 0.024 C2 0.44 0.58 0.017 0.023 D 5.90 6.30 0.232 0.248 6.80 0.252 D H DETAIL A V2 D1 V1 A2 V1 E1 5.30REF D1 G E 6.40 E1 4.63 Max. 0.209REF 0.268 0.182 G 4.47 4.67 0.176 0.184 H 9.50 10.70 0.374 0.421 L 1.09 1.21 0.043 0.048 L2 1.35 1.65 0.053 0.065 6° 0° 7° V1 L2 Typ. Max. 2.50 Min. C Typ. Inches 2.10 A B Millimeters V2 7° 0° 6° DETAIL A TO-252 Reel Spectification-TO-252 B D 0 P0 P2 Dimensions T E Ref. A B0 A D1 W F t1 K0 P1 A0 B B B 5° Φ3 29 A A 20 Φ13 Millimeters Inches Min. Typ. Max. Min. Typ. Max. W 15.90 16.00 16.10 0.626 0.630 0.634 E 1.65 1.75 1.85 0.065 0.069 0.073 F 7.40 7.50 7.60 0.291 0.295 0.299 D0 1.40 1.50 1.60 0.055 0.059 0.063 D1 1.40 1.50 1.60 0.055 0.059 0.063 P0 3.90 4.00 4.10 0.154 0.157 0.161 P1 7.90 8.00 8.10 0.311 0.315 0.319 P2 1.90 2.00 2.10 0.075 0.079 0.083 A0 6.85 6.90 7.00 0.270 0.271 0.276 B0 10.45 10.50 10.60 0.411 0.413 0.417 K0 2.68 2.78 2.88 0.105 0.109 0.113 T 0.24 t1 0.10 10P0 39.80 0.27 0.009 0.011 0.004 40.00 40.20 1.567 1.575 1.583 5 APJ14N65D RVE1.0 永源微電子科技有限公司 APJ14N65D (AP65R650) 650V N-Channel Enhancement Mode MOSFET Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment, adopt safety measures so that these kinds of accidents or events cannot occur. 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APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use. 6 APJ14N65D RVE1.0 永源微電子科技有限公司 APJ14N65D (AP65R650) 650V N-Channel Enhancement Mode MOSFET Edition Date Change Rve1.0 2018/1/31 Initial release Copyright Attribution“APM-Microelectronice” 7 APJ14N65D RVE1.0 永源微電子科技有限公司