NP3090G
30V N-Channel Enhancement Mode MOSFET
Description
Schematic diagram
The NP3090G uses advanced trench technology
and design to provide excellent R DS(ON) with low gate
charge. It can be used in a wide variety of
applications.
D
G
General Features
S
V DS =30V,I D =90A
R DS(ON) (Typ.)=3.8mΩ @V GS =10V
R DS(ON) (Typ.)=6mΩ @V GS =4.5V
High power and current handing capability
Lead free product is acquired
Surface mount package
N
P
X 30
Y XX 90
Y X G
Y
Y
Marking and pin assignment
Application
Load switch
Package
TO-252-2L
XXXX—Wafer Information
YYYY—Quality Code
Ordering Information
Part Number
Storage Temperature
Package
Devices Per Reel
NP3090G
-55°C to +150°C
TO-252-2L
2500
Absolute Maximum Ratings (TA=25℃ unless otherwise noted)
parameter
symbol
limit
unit
Drain-source voltage
V DS
30
V
Gate-source voltage
V GS
±20
V
TC=25°C
Continuous Drain Current
TC=100°C
Pulsed Drain Current
Avalanche Current
(note1)
Avalanche energy( L=0.5mH)
TC=25°C
Maximum power dissipation
Rev.1.1 —Aug.24. 2020
TC=100°C
1
ID
90
70
A
I DP
200
A
IAS
30
A
EAS
112
mJ
PD
85
44
W
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NP3090G
Operating junction Temperature range
Tj
℃
-55—150
Electrical Characteristics (TA=25℃ unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
V GS =0V, I D =250µA
30
-
-
V
V DS =30V, V GS =0V
-
-
1
-
-
30
Static Characteristics
Drain-source breakdown voltage
BV DSS
Zero gate voltage drain current
I DSS
Gate Leakage Current
I GSS
V DS =0V, V GS =±20V
-
-
±100
nA
Gate threshold voltage
V GS(th)
V DS =V GS , I D =250µA
1.2
2
2.8
V
Drain-source on-state resistance1
R DS(ON)
V GS =10V, I D =20A
-
3.8
5.2
V GS =4.5V, I D =20A
-
6
7.2
90
-
-
A
-
0.8
1.1
V
-
90
-
A
-
34
-
ns
Qrr
IF=20A,
dI/dt=100A/us
-
30
-
nC
Gate Resistance
RG
VGS=0V, VDS=0V,f=1MHz
-
0.65
-
Ω
Input capacitance
C ISS
-
1631
-
-
240
-
On Status Drain Current
I D(ON)
T J =85°C
VDS=10V, VGS=10V
µA
mΩ
Diode Characteristics
Diode Forward Voltage1
VSD
Diode Continuous Forward Current
IS
Reverse Recovery Time
trr
Reverse Recovery Charge
ISD=50A,VGS=0V
2
Dynamic Characteristics
V GS =0V ,V DS =15V
f=1.0MHz
Output capacitance
C OSS
Reverse transfer capacitance
C RSS
-
212
-
Turn-on delay time
t D(ON)
-
12
-
Turn-on Rise time
tr
-
14.5
-
Turn-off delay time
t D(OFF)
-
40
-
-
15
-
-
34
Turn-off Fall time
tf
Total gate charge
Qg
Gate-source charge
Q gs
Gate-drain charge
Q gd
V GS =10V, V DS =15V,
RL=20Ω, I D =1A, R G =6Ω
V GS =10V,I D =20A
V DS =15V
pF
ns
nC
4.8
-
7.5
-
-
0.8
1.2
Drain-Source Diode Characteristics
Diode forward voltage
V SD
ISD=90A,VGS=0V
Note: 1:Pulse test; pulse width ≦ 300ns, duty cycle ≦ 2%.
2:Guaranteed by design, not subject to production testing.
Thermal Characteristics
Parameter
Symbol
Typical
Thermal Resistance-Junction to Case
Rθjc
1.7
Thermal Resistance junction-to ambient
Rθja
62.5
Rev.1.1 —Aug.24. 2020
2
Unit
℃/W
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V
NP3090G
100
90
90
81
ID-Drain Current(A)
ID-Drain Current(A)
Typical Performance Characteristics
10V
80
3.3V
70
4.5V
60
50
40
30
20
72
63
54
45
36
27
18
2.5V
9
10
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
5.0
3000
13.5
2700
12.0
2400
Capacitance(pF)
Rdson- On Resistance(mR)
15.0
10.5
9.0
VGS=4.5V
6.0
4.5
4
5
6
7
8
9
10
Ciss
1800
1500
1200
900
Coss
Crss
600
1.5
300
0.0
0
2
4
6
8
10
12
14
16
18
0
20
0
1
ID-Drain Current(A)
2
3
4
5
6
7
8
9
10
45
50
Vds Drain-Source Voltage(V)
Fig3 Rdson-Drain current
Fig4 Capacitance vs Vds
40
10
36
9
Vgs Gate-Source Voltage(V)
Rds- On Resistance(mR)
3
2100
VGS=10V
3.0
2
Vgs Gate-Source Voltage(V)
Fig2 Transfer Characteristics
Vds Drain-Source Voltage(V)
Fig1 Output Characteristics
7.5
1
32
28
24
20
16
12
8
8
7
6
5
4
3
2
1
4
0
0
0
1
2
3
4
5
6
7
8
9
10
5
10
15
20
25
30
35
40
Qg Gate Charge(nC)
Vgs Gate-Source Voltage(V)
Fig5 Rdson-Gate Drain voltage
Rev.1.1 —Aug.24. 2020
0
Fig6 Gate Charge
3
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NP3090G
I S- Reverse Drain Current(A)
100
Power Dissipation (W)
90
80
70
60
50
40
30
20
10
100
10
1
0.1
0
0
15
30
45
60
75
90
105
120
135
150
0.2
0.4
0.6
0.8
1.0
Vsd Source -Gate Voltage(V)
TJ-Junction Temperature(ºC)
Fig7 Power De-rating
Rev.1.1 —Aug.24. 2020
0.0
Fig8 Source-Drain Diode Forward
4
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1.2
NP3090G
Package Information
TO-252-2L
Rev.1.1 —Aug.24. 2020
5
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