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NP3090G

NP3090G

  • 厂商:

    NATLINEAR(南麟)

  • 封装:

    TO252

  • 描述:

    类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):90A;功率(Pd):85W;导通电阻(RDS(on)@Vgs,Id):3.8mΩ@10V,20A;

  • 数据手册
  • 价格&库存
NP3090G 数据手册
NP3090G 30V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP3090G uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications. D G General Features S  V DS =30V,I D =90A R DS(ON) (Typ.)=3.8mΩ @V GS =10V R DS(ON) (Typ.)=6mΩ @V GS =4.5V High power and current handing capability  Lead free product is acquired  Surface mount package N P X 30 Y XX 90 Y X G Y Y Marking and pin assignment Application  Load switch Package  TO-252-2L XXXX—Wafer Information YYYY—Quality Code Ordering Information Part Number Storage Temperature Package Devices Per Reel NP3090G -55°C to +150°C TO-252-2L 2500 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter symbol limit unit Drain-source voltage V DS 30 V Gate-source voltage V GS ±20 V TC=25°C Continuous Drain Current TC=100°C Pulsed Drain Current Avalanche Current (note1) Avalanche energy( L=0.5mH) TC=25°C Maximum power dissipation Rev.1.1 —Aug.24. 2020 TC=100°C 1 ID 90 70 A I DP 200 A IAS 30 A EAS 112 mJ PD 85 44 W www.natlinear.com NP3090G Operating junction Temperature range Tj ℃ -55—150 Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit V GS =0V, I D =250µA 30 - - V V DS =30V, V GS =0V - - 1 - - 30 Static Characteristics Drain-source breakdown voltage BV DSS Zero gate voltage drain current I DSS Gate Leakage Current I GSS V DS =0V, V GS =±20V - - ±100 nA Gate threshold voltage V GS(th) V DS =V GS , I D =250µA 1.2 2 2.8 V Drain-source on-state resistance1 R DS(ON) V GS =10V, I D =20A - 3.8 5.2 V GS =4.5V, I D =20A - 6 7.2 90 - - A - 0.8 1.1 V - 90 - A - 34 - ns Qrr IF=20A, dI/dt=100A/us - 30 - nC Gate Resistance RG VGS=0V, VDS=0V,f=1MHz - 0.65 - Ω Input capacitance C ISS - 1631 - - 240 - On Status Drain Current I D(ON) T J =85°C VDS=10V, VGS=10V µA mΩ Diode Characteristics Diode Forward Voltage1 VSD Diode Continuous Forward Current IS Reverse Recovery Time trr Reverse Recovery Charge ISD=50A,VGS=0V 2 Dynamic Characteristics V GS =0V ,V DS =15V f=1.0MHz Output capacitance C OSS Reverse transfer capacitance C RSS - 212 - Turn-on delay time t D(ON) - 12 - Turn-on Rise time tr - 14.5 - Turn-off delay time t D(OFF) - 40 - - 15 - - 34 Turn-off Fall time tf Total gate charge Qg Gate-source charge Q gs Gate-drain charge Q gd V GS =10V, V DS =15V, RL=20Ω, I D =1A, R G =6Ω V GS =10V,I D =20A V DS =15V pF ns nC 4.8 - 7.5 - - 0.8 1.2 Drain-Source Diode Characteristics Diode forward voltage V SD ISD=90A,VGS=0V Note: 1:Pulse test; pulse width ≦ 300ns, duty cycle ≦ 2%. 2:Guaranteed by design, not subject to production testing. Thermal Characteristics Parameter Symbol Typical Thermal Resistance-Junction to Case Rθjc 1.7 Thermal Resistance junction-to ambient Rθja 62.5 Rev.1.1 —Aug.24. 2020 2 Unit ℃/W www.natlinear.com V NP3090G 100 90 90 81 ID-Drain Current(A) ID-Drain Current(A) Typical Performance Characteristics 10V 80 3.3V 70 4.5V 60 50 40 30 20 72 63 54 45 36 27 18 2.5V 9 10 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 5.0 3000 13.5 2700 12.0 2400 Capacitance(pF) Rdson- On Resistance(mR) 15.0 10.5 9.0 VGS=4.5V 6.0 4.5 4 5 6 7 8 9 10 Ciss 1800 1500 1200 900 Coss Crss 600 1.5 300 0.0 0 2 4 6 8 10 12 14 16 18 0 20 0 1 ID-Drain Current(A) 2 3 4 5 6 7 8 9 10 45 50 Vds Drain-Source Voltage(V) Fig3 Rdson-Drain current Fig4 Capacitance vs Vds 40 10 36 9 Vgs Gate-Source Voltage(V) Rds- On Resistance(mR) 3 2100 VGS=10V 3.0 2 Vgs Gate-Source Voltage(V) Fig2 Transfer Characteristics Vds Drain-Source Voltage(V) Fig1 Output Characteristics 7.5 1 32 28 24 20 16 12 8 8 7 6 5 4 3 2 1 4 0 0 0 1 2 3 4 5 6 7 8 9 10 5 10 15 20 25 30 35 40 Qg Gate Charge(nC) Vgs Gate-Source Voltage(V) Fig5 Rdson-Gate Drain voltage Rev.1.1 —Aug.24. 2020 0 Fig6 Gate Charge 3 www.natlinear.com NP3090G I S- Reverse Drain Current(A) 100 Power Dissipation (W) 90 80 70 60 50 40 30 20 10 100 10 1 0.1 0 0 15 30 45 60 75 90 105 120 135 150 0.2 0.4 0.6 0.8 1.0 Vsd Source -Gate Voltage(V) TJ-Junction Temperature(ºC) Fig7 Power De-rating Rev.1.1 —Aug.24. 2020 0.0 Fig8 Source-Drain Diode Forward 4 www.natlinear.com 1.2 NP3090G Package Information  TO-252-2L Rev.1.1 —Aug.24. 2020 5 www.natlinear.com
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