NP2060G

NP2060G 20V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP2060G uses advanced trench technology to provide excellent RDS(ON) and low gate charge.It can be used in a wide variety of applications. D G General Features       VDS =20V，ID =60A RDS(ON)(Typ.)=4.8mΩ @VGS=4.5V RDS(ON)(Typ.)= 6.2mΩ @VGS=2.5V High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability S Marking and pin assignment TO-252-2L （Top View） Application    Automotive applications Hard switched and high frequency circuits Uninterruptible power supply Package  XXXX—Wafer Information HF Pb TO-252-2L YYYY—Quality Code Ordering Information Part Number Storage Temperature Package Devices Per Reel NP2060G -55°C to +150°C TO-252-2L 2500 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter symbol limit unit Drain-source voltage VDS 20 V Gate-source voltage VGS ±12 V TC=25°C Continuous Drain Current TC=100°C Pulsed Drain Current Avalanche energy( L=0.5mH) （note1） Maximum power dissipation TC=25°C Operating junction Temperature range Rev.1.1 —Oct. 26. 2017 1 ID 60 42 A IDP 210 A EAS 200 mJ PD 60 W Tj -55—150 ℃ www.natlinear.com NP2060G Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit 20 - - V TJ=25°C - - 1 TJ=85°C - - 5 Static Characteristics Drain-source breakdown voltage BVDSS VGS=0V, ID=250µA Zero gate voltage drain current IDSS VDS=20V, VGS=0V Gate Leakage Current IGSS VDS=0V, VGS=±12V - - ±100 nA Gate threshold voltage VGS(th) VDS=VGS, ID=250µA 0.5 0.75 1.2 V Drain-source on-state resistance1 RDS(ON) VGS=4.5V, ID=60A - 4.8 6 VGS=2.5V, ID=40A - 6.2 9 60 - - A RG - 1.2 - Ω Diode Continuous Forward Current IS - - 12 A Reverse Recovery Time trr - 25 - ns - 24 - nC - 3415 - - 482 - On Status Drain Current ID(ON) Gate resistance VDS=20V, VGS=4.5V µA mΩ Diode Characteristics Reverse Recovery Charge Dynamic Characteristics Qrr IF=20A, dI/dt=20A/us 2 Input capacitance CISS VGS=0V ,VDS=10V f=1.0MHz Output capacitance COSS Reverse transfer capacitance CRSS - 78 - Turn-on delay time tD(ON) - 6.5 - Turn-on Rise time tr - 17 - Turn-off delay time tD(OFF) - 29.5 - - 17 - - 82 - - 4.7 - - 10.7 - - 0.8 1.2 Turn-off Fall time tf Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VGS=4.5V, VDS=10V, ID=2A VGS=10V,ID=60A VDS=10V pF ns nC Drain-Source Diode Characteristics Diode forward voltage VSD ISD=10A,VGS=0V Note: 1：Eas test：VDD=10V，RG=25ohm，L=500uH 2：Pulse test; pulse width ≦ 300ns, duty cycle ≦ 2%. 3：Guaranteed by design, not subject to production testing. Rev.1.1 —Oct. 26. 2017 2 www.natlinear.com V NP2060G 90 90 81 81 72 ID-Drain Current(A) ID-Drain Current(A) Typical Performance Characteristics 4.5V 63 3.3V 2.5V 54 2.5V 45 36 27 1.5V 72 63 54 45 36 27 18 18 9 9 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.0 5.0 0.5 Fig1 Output Characteristics 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Fig2 Transfer Characteristics 5000 20 18 4500 16 4000 14 3500 Ciss Capacitance(pF) Rdson- On Resistance(mR) 1.5 Vgs Gate-Source Voltage(V) Vds Drain-Source Voltage(V) 12 10 8 VGS=2.5V 6 4 3000 2500 2000 1500 Coss 1000 VGS=4.5V 2 Crss 500 0 0 0 6 12 18 24 30 36 42 48 54 60 0 1 ID-Drain Current(A) Fig3 Rdson-Drain current 100 5.0 90 4.5 80 4.0 70 60 50 40 30 20 10 0 0.0 2 3 4 5 6 7 8 9 10 45 50 Vds Drain-Source Voltage(V) Fig4 Capacitance vs Vds Vgs Gate-Source Voltage(V) Rds- On Resistance(mR) 1.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 5 10 15 20 25 30 35 Vgs Gate-Source Voltage(V) Qg Gate Charge(nC) Fig5 Rdson-Gate Drain voltage Fig6 Gate Charge Rev.1.1 —Oct. 26. 2017 3 40 www.natlinear.com NP2060G 100 100 IS- Reverse Drain Current(A) Power Dissipation (W) 90 80 70 60 50 40 30 20 10 0 0 15 30 45 60 75 90 105 120 135 10 1 0.1 0.0 150 0.2 0.4 0.6 0.8 1.0 TJ-Junction Temperature(ºC) Vsd Source -Gate Voltage(V) Fig7 Power De-rating Fig8 Source-Drain Diode Forward Rev.1.1 —Oct. 26. 2017 4 www.natlinear.com 1.2 NP2060G Package Information  TO-252-2L Rev.1.1 —Oct. 26. 2017 5 www.natlinear.com