NP12N10G-G

NP12N10G 100V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP12N10G uses advanced trench technology to provide excellent R DS(ON) and low gate charge.It can be used in a wide variety of applications. D G General Features       V DS =100V, I D =12A R DS(ON) (Typ.)=105mΩ @V GS =10V R DS(ON) (Typ.)=122mΩ @V GS =4.5V High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high E AS Excellent package for good heat dissipation Special process technology for high ESD capability S Marking and pin assignment TO-252-2L （Top View） Application    Automotive applications Hard switched and high frequency circuits Uninterruptible power supply Package  XXXX—Wafer Information YYYY—Quality Code TO-252-2L Ordering Information Part Number Storage Temperature Package Devices Per Reel NP12N10G-G -55°C to +150°C TO-252-2L 2500 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter symbol limit unit Drain-source voltage V DS 100 V Gate-source voltage V GS ±20 V TC=25°C Continuous Drain Current TC=100°C Pulsed Drain Current （note1） Avalanche energy( L=0.5mH) Maximum power dissipation TC=25°C Operating junction Temperature range Rev.1.1 —Oct. 26. 2017 1 ID 12 8 A I DP 48 A E AS 25 mJ PD 50 W Tj -55—150 ℃ www.natlinear.com NP12N10G Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit 100 - - V T J =25°C - - 1 T J =85°C - - 30 Static Characteristics Drain-source breakdown voltage BV DSS V GS =0V, I D =250µA Zero gate voltage drain current I DSS V DS =100V, GS =0V Gate Leakage Current I GSS V DS =0V, V GS =±20V - - ±100 nA Gate threshold voltage V GS(th) V DS =V GS , I D =250µA 1 1.6 2.5 V Drain-source on-state resistance1 R DS(ON) V GS =10V, I D =12A - 105 130 V GS =4.5V, I D =10A - 122 150 12 - - A - - 12 A - 22 - ns - 90 - nC - 730 - - 36 - On Status Drain Current I D(ON) VDS=100V, VGS=10V µA mΩ Diode Characteristics Diode Continuous Forward Current IS Reverse Recovery Time trr Reverse Recovery Charge Qrr IF=12A, dI/dt=100A/us Dynamic Characteristics2 Input capacitance C ISS V GS =0V ,V DS =50V f=1.0MHz Output capacitance C OSS Reverse transfer capacitance C RSS - 31 - Turn-on delay time t D(ON) - 15 - Turn-on Rise time tr - 5 - Turn-off delay time t D(OFF) - 25 - - 7 - - 19 Turn-off Fall time tf Total gate charge Qg Gate-source charge Q gs Gate-drain charge Q gd V GS =10V, V DS =50V, I D =12A V GS =10V,I D =12A V DS =50V pF ns nC 4.6 - 4.1 - - 0.8 1.1 Drain-Source Diode Characteristics Diode forward voltage Note: V SD ISD=12A,VGS=0V 1：Eas test：VDD=50V，RG=50ohm，L=500uH 2：Pulse test; pulse width ≦ 300ns, duty cycle ≦ 2%. 3：Guaranteed by design, not subject to production testing. Rev.1.1 —Oct. 26. 2017 2 www.natlinear.com V NP12N10G Typical Performance Characteristics 30 25 24 ID-Drain Current(A) ID-Drain Current(A) 27 21 10V 18 15 4.5V 12 9 6 3.3V 20 15 10 5 2.5V 3 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.0 5.0 0.5 180 1800 160 1600 VGS=4.5V 120 100 VGS=10V 80 60 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1400 1200 1000 Ciss 800 600 40 400 20 200 0 Coss Crss 0 0.0 0.8 1.6 2.4 3.2 4.0 4.8 5.6 6.4 7.2 8.0 0 1 ID-Drain Current(A) 2 3 4 5 6 7 8 9 10 18 20 Vds Drain-Source Voltage(V) Fig3 Rdson-Drain current Fig4 Capacitance vs Vds 10 440 9 400 Vgs Gate-Source Voltage(V) Rds- On Resistance(mR) 1.5 Fig2 Transfer Characteristics 2000 Capacitance(pF) Rdson- On Resistance(mR) Fig1 Output Characteristics 200 140 1.0 Vgs Gate-Source Voltage(V) Vds Drain-Source Voltage(V) 360 320 280 240 200 160 120 8 7 6 5 4 3 2 1 80 0 0 1 2 3 4 5 6 7 8 9 0 10 2 4 6 8 10 12 14 Vgs Gate-Source Voltage(V) Qg Gate Charge(nC) Fig5 Rdson-Gate Drain voltage Fig6 Gate Charge Rev.1.1 —Oct. 26. 2017 3 16 www.natlinear.com NP12N10G 100 IS- Reverse Drain Current(A) 100 Power Dissipation (W) 90 80 70 60 50 40 30 20 10 0 0 15 30 45 60 75 90 105 120 135 150 1 0.1 0.0 TJ-Junction Temperature(ºC) 0.2 0.4 0.6 0.8 1.0 Vsd Source -Gate Voltage(V) Fig7 Power De-rating Rev.1.1 —Oct. 26. 2017 10 Fig8 Source-Drain Diode Forward 4 www.natlinear.com 1.2 NP12N10G Package Information  TO-252-2L Rev.1.1 —Oct. 26. 2017 5 www.natlinear.com