NP36N10G

NP36N10 100V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP36N10 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.It can be used in a wide variety of applications. D G General Features       V DS =100V I D =36A R DS(ON) (Typ.)=32mΩ @V GS =10V R DS(ON) (Typ.)=38mΩ @V GS =4.5V High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high E AS Excellent package for good heat dissipation Special process technology for high ESD capability S Marking and pin assignment TO-252-2L （Top View） Application  Automotive applications  Hard switched and high frequency circuits  Uninterruptible power supply Package  100% UIS TESTED! 100% ∆Vds TESTED! TO-252-2L Ordering Information Part Number Storage Temperature Package Devices Per Reel NP36N10G -55°C to +150°C TO-252-2L 2500 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter symbol limit unit Drain-source voltage V DS 100 V Gate-source voltage V GS ±20 V TC=25°C Continuous Drain Current TC=100°C ID 36 26 A Pulsed Drain Current I DP 144 A Avalanche energy( L=0.5mH) E AS 55 mJ PD 50 W Tj -55—150 ℃ Maximum power dissipation TC=25°C Operating junction Temperature range Rev.1.0 —Oct. 26. 2017 1 www.natlinear.com NP36N10 Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit 100 - - V T J =25°C - - 1 T J =85°C - - 30 Static Characteristics Drain-source breakdown voltage BV DSS V GS =0V, I D =250µA Zero gate voltage drain current I DSS V DS =100V, GS =0V Gate Leakage Current I GSS V DS =0V, V GS =±20V - - ±100 nA Gate threshold voltage V GS(th) V DS =V GS , I D =250µA 1 1.6 2.5 V Drain-source on-state resistance1 R DS(ON) V GS =10V, I D =30A - 32 42 V GS =4.5V, I D =10A - 38 48 36 - - A - - 36 A - 32 - ns - 200 - nC - 1630 - - 100 - On Status Drain Current I D(ON) VDS=100V, VGS=10V µA mΩ Diode Characteristics Diode Continuous Forward Current IS Reverse Recovery Time trr Reverse Recovery Charge Qrr IF=10A, dI/dt=500A/us Dynamic Characteristics2 Input capacitance C ISS V GS =0V ,V DS =50V f=1.0MHz Output capacitance C OSS Reverse transfer capacitance C RSS - 50 - Turn-on delay time t D(ON) - 7 - Turn-on Rise time tr - 7 - Turn-off delay time t D(OFF) - 29 - - 7 - - 34 Turn-off Fall time tf Total gate charge Qg Gate-source charge Q gs Gate-drain charge Q gd V GS =10V, V DS =50V, R L =5Ω, R GEN =3Ω V GS =10V,I D =10A V DS =50V pF ns nC 6 - 9 - - 0.8 1.1 Drain-Source Diode Characteristics Diode forward voltage V SD ISD=10A,VGS=0V Note: 1：Pulse test; pulse width ≦ 300ns, duty cycle ≦ 2%. 2：Guaranteed by design, not subject to production testing. Rev.1.0 —Oct. 26. 2017 2 www.natlinear.com V NP36N10 Typical Performance Characteristics Rev.1.0 —Oct. 26. 2017 3 www.natlinear.com NP36N10 Rev.1.0 —Oct. 26. 2017 4 www.natlinear.com NP36N10 Rev.1.0 —Oct. 26. 2017 5 www.natlinear.com NP36N10 Package Information  TO-252-2L Rev.1.0 —Oct. 26. 2017 6 www.natlinear.com