AOD417-MS

www.msksemi.com AOD417-MS Semiconductor Compiance Description The AOD417-MS uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features D VDS = -30V ID =-40 A G RDS(ON) < 20mΩ @ VGS=10V S Application Battery protection P-Channel MOSFET Load switch TO-252 Uninterruptible power supply Absolute Maximum Ratings (TC=25℃unless otherwise noted) Rating 10s Steady State Symbol Parameter Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ -10V1 -40 A ID@TC=100℃ Continuous Drain Current, VGS @ -10V1 -22 A ID@TA=25℃ Continuous Drain Current, VGS @ -10V1 -13.4 -8.5 A ID@TA=70℃ Continuous Drain Current, VGS @ -10V1 -10.7 -6.8 A IDM EAS IAS Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current Dissipation4 -70 A 72.2 mJ -38 A 34.7 W PD@TC=25℃ Total Power PD@TA=25℃ Total Power Dissipation4 TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance Junction-Ambient 1 62 ℃/W RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) 25 ℃/W RθJC Thermal Resistance Junction-Case1 3.6 ℃/W 5 2 W www.msksemi.com AOD417-MS Semiconductor Compiance Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient Conditions Min. Typ. Max. Unit VGS=0V , ID=-250uA -30 --- --- V Reference to 25℃ , ID=-1mA --- -0.022 --- V/℃ VGS=-10V , ID=-15A --- 18 20 ---1.0 25 --- 32 -2.5 mΩ V RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage VGS=-4.5V , ID=-10A △VGS(th) VGS(th) Temperature Coefficient VGS=VDS , ID =-250uA VDS=-24V , VGS=0V , TJ=25℃ ----- 4.6 --- ---1 mV/℃ IDSS IGSS Drain-Source Leakage Current Gate-Source Leakage Current VDS=-24V , VGS=0V , TJ=55℃ VGS=±20V , VDS=0V ----- ----- -5 ±100 uA nA gfs Forward Transconductance VDS=-5V , ID=-10A --- 5 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 13 --- Ω Qg Total Gate Charge (-4.5V) --- 12.5 --- Qgs Gate-Source Charge --- 5.4 --- Qgd Gate-Drain Charge --- 5 --- Td(on) Turn-On Delay Time --- 4.4 --- --- 11.2 --- --- 34 --- --- 18 --- --- 1345 --- --- 194 --- --- 158 --- Tr Td(off) Tf Rise Time Turn-Off Delay Time Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance IS ISM VSD trr Qrr VDS=-15V , VGS=-4.5V , ID=-15A VDD=-15V RG=3.3 , , VGS=-10V ID=-15A VDS=-15V , VGS=0V , f=1MHz Continuous Source Current1,5 , nC ns pF --- --- -35 A --- --- -70 A VGS=0V , IS=-1A , TJ=25℃ --- --- -1.2 V Reverse Recovery Time IF=-15A , dI/dt=100A/µs , --- 12.4 --- nS Reverse Recovery Charge TJ=25℃ --- 5 --- nC Pulsed Source Current2,5 Diode Forward Voltage2 VG=VD=0V , Force Current www.msksemi.com AOD417-MS Semiconductor Compiance Typical Characteristics 30 ID=-12A 27 21 VGS=-7V 44 RDSON (mΩ) VGS=-10V -ID Drain Current (A) 24 VGS=-5V 18 VGS=-4.5V 15 VGS=-3V 12 30 9 6 3 0 16 0 0.5 1 1.5 -VDS , Drain-to-Source Voltage (V) 2 4 Fig.1 Typical Output Characteristics 8 10 Voltage 10 ID=-15A -VGS Gate to Source Voltage (V) 10 8 6 TJ=150℃ TJ=25℃ 4 2 0 8 6 VDS=15V 4 VDS=24V 2 0 0.2 0.4 0.6 0.8 1 0 -VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse 5 10 15 20 QG , Total Gate Charge (nC) 25 30 Fig.4 Gate-Charge Characteristics diode 2.0 Normalized On Resistance 1.5 Normalized VGS(th) -VGS (V) Fig.2 On-Resistance v.s Gate-Source 12 -IS Source Current(A) 6 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 TJ ,Junction Temperature ( ℃) Fig.5 Normalized VGS(th) v.s TJ 150 -50 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON v.s TJ www.msksemi.com AOD417-MS Semiconductor 10000 100.00 F=1.0MHz Compiance 100us 1ms Capacitance (pF) Ciss 10.00 10ms 1000 -ID (A) 100ms DC 1.00 Coss Crss 100 0.10 Tc=25o C Single Pulse 0.01 10 1 5 9 13 17 -VDS Drain to Source Voltage(V) 21 0.1 25 Fig.7 Capacitance 1 10 -VDS (V) 100 Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.1 0.2 0.1 0.05 0.02 0.01 PDM 0.01 TON SINGLE PULSE T D = TON/T TJpeak = TC + PDM x RθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform Fig.11 Unclamped Inductive Switching Waveform www.msksemi.com AOD417-MS Semiconductor Compiance PACKAGE MECHANICAL DATA D A D1 c E V L3 h L4 L A1 L2 L1 D2 b e θ Symbol A A1 b c D D1 D2 E e L L1 L2 L3 L4 θ h V Dimensions In Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.635 0.770 0.460 0.580 6.500 6.700 5.100 5.460 4.830 REF. 6.000 6.200 2.186 2.386 9.712 10.312 2.900 REF. 1.400 1.700 1.600 REF. 0.600 1.000 0° 0.000 5.250 REF. 8° 0.300 Dimensions In Inches Min. Max. 0.087 0.094 0.000 0.005 0.025 0.030 0.018 0.023 0.256 0.264 0.201 0.215 0.190 REF. 0.236 0.244 0.086 0.094 0.382 0.406 0.114 REF. 0.055 0.067 0.063 REF. 0.024 0.039 0° 0.000 0.207 REF. 8° 0.012 REEL SPECIFICATION P/N PKG QTY AOD417-MS TO-252 2500 www.msksemi.com AOD417-MS Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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