AOD4132-MS

www.msksemi.com AOD4132-MS Semiconductor Compiance Description The AOD4132-MS uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features PIN2 D ! VDS = 30V ID =100 A " ! ! " RDS(ON) < 5.5mΩ @ VGS=10V " " Application ! PIN3 S Battery protection N-Channel MOSFET Load switch Uninterruptible power supply TO-252 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Rating Units VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 100 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 57 A ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 27 17 A ID@TA=70℃ 10V1 23 14.5 A Continuous Drain Current, VGS @ IDM Pulsed Drain Current2 160 A EAS Single Pulse Avalanche Energy3 115.2 mJ IAS Avalanche Current 48 A 53 W Dissipation4 PD@TC=25℃ Total Power PD@TA=25℃ Total Power Dissipation4 TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ RθJA Thermal Resistance Junction-ambient (Steady State)1 62 ℃/W RθJA Thermal Resistance Junction-Ambient 1 (t ≤10s) 25 ℃/W RθJC Thermal Resistance Junction-Case1 2.8 ℃/W 6 2.4 W www.msksemi.com AOD4132-MS Semiconductor Compiance Electrical Characteristics (TJ=25℃, unless otherwise noted) Symbol Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA VGS=10V , ID=30A --- 0.028 --- V/℃ --- 4.3 5.5 VGS=4.5V , ID=15A --- 7.5 9 VGS=VDS , ID =250uA 1.0 1.5 2.5 mΩ V VGS(th) Temperature Coefficient --- -6.16 --- mV/℃ --- --- 1 --- --- 5 IGSS VDS=24V , VGS=0V , TJ=25℃ Drain-Source Leakage Current VDS=24V , VGS=0V , TJ=55℃ Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=30A --- 22 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 1.7 3.4 Ω Qg Total Gate Charge (4.5V) --- 20 --- --- 7.6 --- --- 7.2 --- --- 7.8 --- --- 15 --- --- 37.3 --- --- 10.6 --- --- 2295 --- --- 267 --- --- 210 --- --- --- 80 A --- --- 160 A --- --- 1 V --- 14 --- nS --- 5 --- nC BVDSS △BVDSS/△TJ RDS(ON) VGS(th) △VGS(th) IDSS Parameter Drain-Source Breakdown Voltage BVDSS Temperature Coefficient Static Drain-Source OnResistance2 Gate Threshold Voltage Qgs Gate-Source Charge Qgd Gate-Drain Charge Td(on) Turn-On Delay Time Tr Td(off) Tf Rise Time Turn-Off Delay Time Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance IS Continuous Source Current1,5 ISM VSD Pulsed Source Current2,5 Diode Forward Voltage2 Conditions VDS=15V , VGS=4.5V , ID=15A VDD=15V , VGS=10V , RG=3.3 ID=15A VDS=15V , VGS=0V , f=1MHz VG=VD=0V , Force Current trr Reverse Recovery Time VGS=0V , IS=1A , TJ=25℃ IF=30A , dI/dt=100A/µs , Qrr Reverse Recovery Charge TJ=25℃ uA nC ns pF Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width .The EAS data shows Max. rating . 3.The test cond≦ 300us , duty cycle ition is VDD=25≦V,V 2%GS =10V,L=0.1mH,IAS=53.8A 4.The power dissipation is limited by 175℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.msksemi.com AOD4132-MS Semiconductor Compiance Typical Characteristics 180 9 ID=12A 120 VGS=10V 90 VGS=7V VGS=5V VGS=3V 8 RDSON (mΩ) ID Drain Current (A) 150 VGS=4.5V 6 60 5 30 0 3 0 0.5 1 1.5 2 2.5 VDS , Drain-to-Source Voltage (V) 3 2 4 6 8 10 VGS (V) Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage 10 12 ID =15A TJ=25℃ VGS , Gate to Source Voltage (V) TJ=150℃ IS(A) 9 6 3 0 0 0.3 0.6 0.9 8 6 VDS=15V VDS=24V 4 2 0 1.2 0 VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse 12 18 24 30 QG , Total Gate Charge (nC) 36 42 Fig.4 Gate-Charge Characteristics diode 1.8 Normalized On Resistance 1.8 1.4 1.4 Normalized VGS(th) 6 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 TJ ,Junction Temperature (℃ ) Fig.5 Normalized VGS(th) vs. TJ 150 -50 -5 40 85 130 175 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ www.msksemi.com AOD4132-MS Semiconductor Compiance 10000 Capacitance (pF) F=1.0MHz Ciss 1000 Coss Crss 100 10 1 5 9 13 17 21 25 VDS , Drain to Source Voltage (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 P DM T ON SINGLE T D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform VGS Fig.11 Unclamped Inductive Switching Waveform www.msksemi.com AOD4132-MS Semiconductor Compiance PACKAGE MECHANICAL DATA D A D1 c E V L3 h L4 L A1 L2 L1 D2 b e θ Symbol A A1 b c D D1 D2 E e L L1 L2 L3 L4 θ h V Dimensions In Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.635 0.770 0.460 0.580 6.500 6.700 5.100 5.460 4.830 REF. 6.000 6.200 2.186 2.386 9.712 10.312 2.900 REF. 1.400 1.700 1.600 REF. 0.600 1.000 0° 0.000 5.250 REF. 8° 0.300 Dimensions In Inches Min. Max. 0.087 0.094 0.000 0.005 0.025 0.030 0.018 0.023 0.256 0.264 0.201 0.215 0.190 REF. 0.236 0.244 0.086 0.094 0.382 0.406 0.114 REF. 0.055 0.067 0.063 REF. 0.024 0.039 0° 0.000 0.207 REF. 8° 0.012 REEL SPECIFICATION P/N PKG QTY AOD4132-MS TO-252 2500 www.msksemi.com AOD4132-MS Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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