AOD2606-MS

www.msksemi.com AOD2606-MS Semiconductor Compiance General Description The AOD2606-MS use advanced VD MOST technology to provide low RDS(ON), low gate charge, fast switching This device is specially designed to get better ruggedness and suitable to use in Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity or Invertors Applications PIN2 D ! Consumer electronic power supply Motor control " PIN1 G ! Synchronous-rectification Isolated DC ! " " " Synchronous-rectification applications ! General Features PIN3 S VDS = 60V ID =80 A N-Channel MOSFET RDS(ON) < 8mΩ @ VGS=10V TO-252 RDS(ON) < 12m Ω @ VGS=4.5V Absolute Maximum Ratings@Tj=25oC(unless otherwise specified) Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Drain Current, VGS @ 10V 80 A ID@TC=100℃ Drain Current, VGS @ 10V 43 A IDM Pulsed Drain Current1 272 A PD@TC=25℃ Total Power Dissipation 104 W Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Rthj-c Maixmum Thermal Resistance, Junction-case 1.2 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount)3 62.5 ℃/W TSTG www.msksemi.com AOD2606-MS Semiconductor Compiance Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source OnResistance2 VGS=0V, ID=250uA Typ. 60 - Gate Threshold Voltage VDS=VGS, ID=250uA Max. Units - V - 6 10 mΩ - 8.3 15 mΩ 1 1.4 3 V VGS=10V, ID=45A VGS=4.5V, ID=30A VGS(th) Min. gfs Forward Transconductance VDS=10V, ID=30A - 71 - S IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 10 uA Current VDS=48V ,VGS=0V - - 250 uA Drain-Source (Tj=125oC) Leakage IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=30A - 33 45 nC Qgs Gate-Source Charge VDS=48V - 5 - nC Qgd Gate-Drain ("Miller") Charge - 21 - nC td(on) Turn-on Delay Time VDS=30V - 10 - ns tr Rise Time ID=30A - 43 - ns td(off) Turn-off Delay Time - 47 - ns tf Fall Time - 80 - ns Ciss VGS=4.5V RG=3.3Ω VGS=10V Input Capacitance Coss Output Capacitance Crss VGS=0V - 2680 3300 pF - 260 - pF Reverse Transfer Capacitance VDS=25V f=1.0MHz - 180 - pF VSD Forward On Voltage2 IS=45A, VGS=0V - - 1.3 V trr Reverse Recovery Time IS=10A, VGS=0V, dI/dt=100A/µs - 30 - ns Qrr Reverse Recovery Charge - 18 - nC www.msksemi.com AOD2606-MS Semiconductor Compiance Typical Performance Characteristics 200 100 10V 7.0V o T C =25 C 160 80 ID , Drain Current (A) ID , Drain Current (A) 10V 7.0V 5.0V 4.5V T C = 150 o C 5.0V 120 4.5V 80 40 60 40 V G =3.0V 20 V G =3.0V 0 0 0 2 4 6 8 10 0 12 1 Fig 1. Typical Output Characteristics 3 4 5 6 Fig 2. Typical Output Characteristics 16 2.0 I D = 30 A I D =45A V G =10V T C =25 o C Normalized RDS(ON) 14 RDS(ON) (mΩ ) 2 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) 12 1.6 1.2 0.8 10 0.4 8 2 4 6 8 -50 10 V GS , Gate-to-Source Voltage (V) 0 50 100 150 o T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 1.5 40 T j =150 o C Normalized VGS(th) IS(A) 30 T j =25 o C 20 1.1 0.7 10 0 0.3 0 0.2 0.4 0.6 0.8 1 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.2 -50 0 50 100 150 T j , Junction Temperature ( o C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature www.msksemi.com AOD2606-MS Semiconductor I D = 30 A V DS =48V 5 3000 4 C iss C (pF) VGS , Gate to Source Voltage (V) f=1.0MHz 4000 6 3 2000 2 1000 1 C oss C rss 0 0 0 10 20 30 40 50 1 60 21 Q G , Total Gate Charge (nC) 41 61 81 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 Normalized Thermal Response (R thjc) 1000 Operation in this area limited by RDS(ON) 100 100us ID (A) Compiance 10 1ms 10ms 100ms DC 1 T C =25 o C Single Pulse 0.1 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + TC Single Pulse 0.01 0.1 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) 0.001 0.01 0.1 1 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 100 T j =25 o C V DS =5V VG T j =150 o C ID , Drain Current (A) 80 QG 4.5V 60 QGS QGD 40 20 Charge Q 0 0 2 4 6 8 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform www.msksemi.com AOD2606-MS Semiconductor Compiance PACKAGE MECHANICAL DATA D A D1 c E V L3 h L4 L A1 L2 L1 D2 b e θ Symbol A A1 b c D D1 D2 E e L L1 L2 L3 L4 θ h V Dimensions In Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.635 0.770 0.460 0.580 6.500 6.700 5.100 5.460 4.830 REF. 6.000 6.200 2.186 2.386 9.712 10.312 2.900 REF. 1.400 1.700 1.600 REF. 0.600 1.000 0° 0.000 5.250 REF. 8° 0.300 Dimensions In Inches Min. Max. 0.087 0.094 0.000 0.005 0.025 0.030 0.018 0.023 0.256 0.264 0.201 0.215 0.190 REF. 0.236 0.244 0.086 0.094 0.382 0.406 0.114 REF. 0.055 0.067 0.063 REF. 0.024 0.039 0° 0.000 0.207 REF. 8° 0.012 REEL SPECIFICATION P/N PKG QTY AOD2606-MS TO-252 2500 www.msksemi.com AOD2606-MS Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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