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AOD424-MS
Semiconductor
Compiance
Description
The AOD424-MS uses advanced trench technology
to provide excellent RDS(ON), low gate charge and
operation with gate voltages as low as 4.5V. This
device is suitable for use as a
Battery protection or in other Switching application.
General Features
VDS = 20V ID =60 A
PIN2 D
!
RDS(ON) < 6.5mΩ @ VGS=4.5V
"
PIN1 G !
! "
Application
"
"
!
Battery protection
PIN3 S
N-Channel MOSFET
Load switch
Uninterruptible power supply
TO-252
Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
20
V
Gate-Source Voltage
VGS
±12
V
ID
60
A
ID (100℃)
42
A
Pulsed Drain Current
IDM
210
A
Maximum Power Dissipation
PD
60
W
0.48
W/℃
EAS
200
mJ
TJ,TSTG
-55 To 150
℃
RθJC
2.1
℃/W
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
Derating factor
Single pulse avalanche energy
(Note 5)
Operating Junction and Storage Temperature Range
Thermal Resistance,Junction-to-Case(Note 2)
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AOD424-MS
Semiconductor
Compiance
Electrical Characteristics (TC=25℃unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=250μA
20
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=20V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
IGSS
VGS=±12V,VDS=0V
-
-
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=250μA
0.5
0.75
1.0
V
VGS=4.5V, ID=20 A
-
5.5
7
mΩ
Drain-Source On-State Resistance
RDS(ON)
6.2
9
mΩ
15
-
-
S
-
2000
-
PF
-
500
-
PF
-
200
-
PF
-
6.4
-
nS
Forward Transconductance
gFS
Input Capacitance
Clss
Output Capacitance
VGS=2.5V, ID=15A
VDS=10V,ID=20A
VDS=10V,VGS=0V,
Coss
F=1.0MHz
Reverse Transfer Capacitance
Crss
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=10V,ID=2A,RL=1Ω
-
17.2
-
nS
td(off)
VGS=4.5V,RG=3Ω
-
29.6
-
nS
-
nS
Turn-Off Delay Time
Turn-Off Fall Time
tf
-
16.8
Total Gate Charge
Qg
-
27
nC
Gate-Source Charge
Qgs
-
6.5
nC
-
6.4
nC
Gate-Drain Charge
Qgd
Diode Forward Voltage (Note 3)
VSD
Diode Forward Current (Note 2)
IS
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
Forward Turn-On Time
ton
VDS=10V,ID=20A,
VGS=10V
VGS=0V,IS=10A
TJ = 25°C, IF = 20A
di/dt = 100A/μs(Note3)
-
1.2
V
-
-
60
A
-
25
-
nS
-
24
-
nC
Intrinsic turn-on time is negligible (turn-on is dominated by
LS+LD)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25℃,VDD=10V,VG=10V,L=0.5mH,Rg=25Ω,
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AOD424-MS
Semiconductor
Compiance
Typical Electrical and Thermal Characteristics (Curves)
Vds Drain-Source Voltage (V)
Figure 1 Output Characteristics
Vgs Gate-Source Voltage (V)
Figure 2 Transfer Characteristics
ID- Drain Current (A)
Figure 3 Rdson- Drain Current
TJ-Junction Temperature(℃)
Figure 4 Rdson-JunctionTemperature
Qg Gate Charge (nC)
Figure 5 Gate Charge
Vsd Source-Drain Voltage (V)
Figure 6 Source- Drain Diode Forward
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AOD424-MS
Semiconductor
Vds Drain-Source Voltage (V)
TJ-Junction Temperature (℃)
Figure 7 Capacitance vs Vds
Figure 9 Power De-rating
Vds Drain-Source Voltage (V)
Figure 8 Safe Operation Area
Compiance
TJ-Junction Temperature(℃)
Figure 10 VGS(th) vs Junction Temperature
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
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AOD424-MS
Semiconductor
Compiance
PACKAGE MECHANICAL DATA
D
A
D1
c
E
V
L3
h
L4
L
A1
L2
L1
D2
b
e
θ
Symbol
A
A1
b
c
D
D1
D2
E
e
L
L1
L2
L3
L4
θ
h
V
Dimensions In Millimeters
Min.
Max.
2.200
2.400
0.000
0.127
0.635
0.770
0.460
0.580
6.500
6.700
5.100
5.460
4.830 REF.
6.000
6.200
2.186
2.386
9.712
10.312
2.900 REF.
1.400
1.700
1.600 REF.
0.600
1.000
0°
0.000
5.250 REF.
8°
0.300
Dimensions In Inches
Min.
Max.
0.087
0.094
0.000
0.005
0.025
0.030
0.018
0.023
0.256
0.264
0.201
0.215
0.190 REF.
0.236
0.244
0.086
0.094
0.382
0.406
0.114 REF.
0.055
0.067
0.063 REF.
0.024
0.039
0°
0.000
0.207 REF.
8°
0.012
REEL SPECIFICATION
P/N
PKG
QTY
AOD424-MS
TO-252
2500
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AOD424-MS
Semiconductor
Compiance
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