AOD478-MS

www.msksemi.com AOD478-MS Semiconductor Compiance Description The AOD478-MS is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The AOD478-MS meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. Product Summary PIN2 D ! " PIN1 G ! ! " " " ! PIN3 S BVDSS RDSON ID 100V 70 mΩ 20A N-Channel MOSFET TO-252 Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM ±20 V Continuous Drain Current, VGS @ 10V1 20 A Continuous Drain Current, VGS @ 10V1 10 A Continuous Drain Current, VGS @ 10V1 5 A Continuous Drain Current, VGS @ 10V1 3.4 A Pulsed Drain Current2 30 A EAS Single Pulse Avalanche Energy3 6.1 mJ IAS Avalanche Current 15 A PD@TC=25℃ Total Power Dissipation3 34.7 W PD@TA=25℃ Dissipation3 2 W Total Power TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC Junction-Case1 Thermal Resistance Typ. 1 Max. Unit --- 62 ℃/W --- 3.6 ℃/W www.msksemi.com AOD478-MS Semiconductor Compiance Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current Conditions Min. Typ. Max. Unit 100 --- --- V Reference to 25℃ , ID=1mA --- 0.098 --- V/℃ VGS=10V , ID=10A --- 70 87 m VGS=4.5V , ID=8A --- 90 m VGS=0V , ID=250uA 85 1.0 --- 2.5 V --- -4.57 --- mV/℃ VDS=80V , VGS=0V , TJ=25℃ --- --- 1 VDS=80V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=10A --- 13 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2 ---  Qg Total Gate Charge (10V) --- 26.2 --- Qgs Gate-Source Charge --- 4.6 --- Qgd Gate-Drain Charge --- 5.1 --- Td(on) Turn-On Delay Time --- 4.2 --- Tr Td(off) Tf VDS=80V , VGS=10V , ID=10A Rise Time VDD=50V , VGS=10V , RG=3.3 --- 8.2 --- Turn-Off Delay Time ID=10A --- 35.6 --- nC ns Fall Time --- 9.6 --- Ciss Input Capacitance --- 1535 --- Coss Output Capacitance --- 60 --- Crss Reverse Transfer Capacitance --- 37 --- Min. Typ. Max. Unit --- --- 20 A --- --- 30 A --- --- 1.2 V --- 37 --- nS --- 27.3 --- nC VDS=15V , VGS=0V , f=1MHz pF Diode Characteristics Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current1,5 Pulsed Source Current2,5 Diode Forward Voltage2 Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ Reverse Recovery Time Reverse Recovery Charge IF=10A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=11A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.msksemi.com AOD478-MS Semiconductor Compiance Typical Characteristics 25 VGS=10V VGS=7V 20 ID Drain Current (A) VGS=5V 15 VGS=4.5V 10 5 VGS=3V 0 0 2 4 6 VDS , Drain-to-Source Voltage (V) Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Voltage 10 IS Source Current(A) 8 6 TJ=150℃ 4 TJ=25℃ 2 0 0.00 0.25 0.50 0.75 1.00 VSD , Source-to-Drain Voltage (V) Fig.4 Gate-Charge Characteristics Fig.3 Forward Characteristics Of Reverse diode 2.5 Normalized On Resistance Normalized VGS(th) (V) 1.8 2.0 1.4 1.5 1 0.6 1.0 0.2 0.5 -50 0 50 100 TJ ,Junction Temperature (℃ ) Fig.5 Normalized VGS(th) vs. TJ 150 -50 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ www.msksemi.com AOD478-MS Semiconductor 10000 Compiance 100.00 F=1.0MHz 10us 100us 10.00 1ms 1000 ID (A) Capacitance (pF) Ciss 10ms 100ms 1.00 100 DC Coss 0.10 TC=25℃ Single Pulse Crss 10 0.01 1 5 9 13 17 21 25 0.1 1 10 VDS , Drain to Source Voltage (V) 100 1000 VDS (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 P DM 0.01 T ON T SINGLE D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform VGS Fig.11 Unclamped Inductive Switching Waveform www.msksemi.com AOD478-MS Semiconductor Compiance PACKAGE MECHANICAL DATA D A D1 c E V L3 h L4 L A1 L2 L1 D2 b e θ Symbol A A1 b c D D1 D2 E e L L1 L2 L3 L4 θ h V Dimensions In Millimeters Min. Max. 2.200 2.400 0.000 0.127 0.635 0.770 0.460 0.580 6.500 6.700 5.100 5.460 4.830 REF. 6.000 6.200 2.186 2.386 9.712 10.312 2.900 REF. 1.400 1.700 1.600 REF. 0.600 1.000 0° 0.000 5.250 REF. 8° 0.300 Dimensions In Inches Min. Max. 0.087 0.094 0.000 0.005 0.025 0.030 0.018 0.023 0.256 0.264 0.201 0.215 0.190 REF. 0.236 0.244 0.086 0.094 0.382 0.406 0.114 REF. 0.055 0.067 0.063 REF. 0.024 0.039 0° 0.000 0.207 REF. 8° 0.012 REEL SPECIFICATION P/N AOD478-MS PKG QTY TO-252 2500 www.msksemi.com AOD478-MS Semiconductor Compiance Attention ■ Any and all MSKSEMI Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. 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