ASDM100N34KQ-R

ASDM100N34KQ 100V N-Channel MOSFET Product Summary General Features ● Advanced Trench Technology ● Lead free product is acquired ● Provide Excellent RDS(ON) and Low Gate Charge VDSS 100 V RDS(ON)-Typ 24 mΩ ID 34 A Application ● Load Switch ● PWM Application ● Power management D G S TO-252 Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol Parameter Max. Units VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V TC = 25℃ 34 A TC = 100℃ 20 A 120 A 110 mJ 63 W 2.5 ℃/W -55 to +175 ℃ ID IDM EAS PD RθJC TJ, TSTG Continuous Drain Current Pulsed Drain Current note1 Single Pulsed Avalanche Power Dissipation Energy note2 TC = 25℃ Thermal Resistance, Junction to Case Operating and Storage Temperature Range DEC 2018 Version1.0 1/8 Ascend Semicondutor Co.,Ltd ASDM100N34KQ 100V N-Channel MOSFET Electrical Characteristics (TJ=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 100 - - V IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V, - - 1.0 μA IGSS Gate to Body Leakage Current VDS=0V, VGS=±20V - - ±100 nA Gate Threshold Voltage VDS=VGS, ID=250μA 1.0 1.5 2.5 V Static Drain-Source on-Resistance VGS=10V, ID=20A - 24 32 mΩ note2 VGS=4.5V, ID=10A - 26 36 mΩ - 1500 - pF - 380 - pF - 252 - pF - 23 - nC - 5 - nC - 4 - nC - 12.6 - ns - 6 - ns - 22 - ns - 5.3 - ns On Characteristics VGS(th) RDS(on) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS=25V, VGS=0V, f=1.0MHz VDS=30V, ID=15A, VGS=10V Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf VDS=30V, ID=15A, RG=1.8Ω, VGS=10V Turn-off Fall Time Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - 30 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 120 A VSD Drain to Source Diode Forward Voltage - - 1.2 V - 71 - ns - 145 - nC trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=0V, IS=30A IF=15A,dI/dt=100A/μs Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. EAS condition : TJ=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=25Ω 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% DEC 2018 Version1.0 2/8 Ascend Semicondutor Co.,Ltd ASDM100N34KQ 100V N-Channel MOSFET Test Circuit Figure1:Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms DEC 2018 Version1.0 3/8 Ascend Semicondutor Co.,Ltd ASDM100N34KQ 100V N-Channel MOSFET Typical Electrical and Thermal Characteristics (Curves) 40 ID (A) 40 ID (A) 4.5V 30 30 3V 10V 125℃ 20 20 10 10 25℃ 1.5V 0 0 2 VDS(V) 6 4 8 10 0 12 0 VGS(V) 3.0 2.0 4.0 5.0 6.0 Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics IS(A) RDS(ON) (mΩ) 30 1.0 103 28 VGS=4.5V 102 26 TJ=125℃ 24 TJ=25℃ 101 VGS=10V 22 VGS=0V ID(A) 20 0 10 20 30 100 0.2 40 Figure 3:On-resistance vs. Drain Current 0.8 VSD(V) 1.0 1.2 1.4 1.6 1.8 C(pF) VDS=30V ID=15A 8 0.6 Figure 4: Body Diode Characteristics VGS(V) 10 0.4 104 Ciss 103 6 Coss 4 Crss 102 2 0 0 Qg(nC) 5 10 20 25 0 Figure 5: Gate Charge Characteristics DEC 2018 Version1.0 VDS(V) 101 15 5 10 15 20 25 30 Figure 6: Capacitance Characteristics 4/8 Ascend Semicondutor Co.,Ltd ASDM100N34KQ 100V N-Channel MOSFET VBR(DSS) 1.3 R DS(on) 2.5 1.2 2.0 1.1 1.5 1.0 1.0 0.9 Tj (℃) 0 -100 -50 0 50 100 150 0.5 -100 200 ID(A) 36 102 Limited by R DS(on) 100 150 200 ID(A) 24 10μs 100μs 100 50 30 1μs 10 0 Figure 8: Normalized on Resistance vs. Junction Temperature Figure 7: Normalized Breakdown Voltage vs. Junction Temperature 1 Tj (℃) -50 18 1ms 12 10ms 10-1 TA=25 ℃ Single pulse 10-2 0.1 DC 6 VDS (V) 10 1 0 100 25 50 T C (℃) 75 100 125 150 175 Figure 10: Maximum Continuous Drain Current vs. Case Temperature Figure 9: Maximum Safe Operating Area 101 0 Zth J-C(℃ /W) 10-1 D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse -2 10 -3 10 10-6 10-5 10-4 10-3 TP(s) 10-2 PDM 100 t1 t2 Notes: 1.Duty factor D=t1/t2 2.Peak T J=PDM *ZthJC+T C 10-1 100 101 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Case DEC 2018 Version1.0 5/8 . Ascend Semicondutor Co.,Ltd ASDM100N34KQ 100V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM100N34KQ-R 100N34 TO-252 Tape&Reel 2500 MARKING PACKAGE TO-252 DEC 2018 Version1.0 100N34 6/8 Ascend Semicondutor Co.,Ltd ASDM100N34KQ 100V N-Channel MOSFET TO-252 PACKAGE IN FORMATION 6\PERO 'LPHQVLRQVLQ0LOOLPHWHUV 0D[ $     $     0LQ 0D[ $     E     E     F     F     '     '     (     (     +    7