ASDM100R160NKQ-R

ASDM100R160NKQ 100V N-Channel Power MOSFET General Description Product Summary ● Low RDS(on) & FOM ● Extremely low switching loss ● Excellent stability and uniformity ● Fast switching and soft recovery Applications ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply V DS 100 V R DS(on),Typ@ VGS=10 V 14 mΩ ID 45 A Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 100 V Gate-source Voltage VGS ±20 V 45 TC=25℃ Drain Current ID A 28.5 TC=100℃ Pulsed Drain Current A IDM 180 A Avalanche energy B EAS 81 mJ 72 Tc=25℃ Total Power Dissipation C PD W 28.8 Tc=100℃ Junction and Storage Temperature Range TJ ,TSTG ℃ -55～+150 Thermal resistance Parameter Thermal Resistance Junction-to-Ambient D Symbol t≤10S Typ Max 15 20 40 50 1.35 1.7 Units RθJA Thermal Resistance Junction-to-Ambient D Steady-State Thermal Resistance Junction-to-Case Steady-State May 2019 Version1.0 RθJC 1/7 ℃/W Ascend Semicondutor Co.,Ltd ASDM100R160NKQ 100V N-Channel Power MOSFET Electrical Characteristics (Tj=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 100 Zero Gate Voltage Drain Current IDSS VDS=100,VGS=0V 1 μA IGSS VGS= ±20V, VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=250μA 1.8 3 V VGS= 10V, ID=20A 14 17 mΩ Static Drain-Source On-Resistance RDS(ON) VGS= 4.5V, ID=20A 17 21.5 mΩ 1.3 V 45 A Static Parameter Gate-Body Leakage Current Diode Forward Voltage VSD Maximum Body-Diode Continuous Current IS Gate resistance RG 1 V IS=20A,VGS=0V f= 1 MHz, Open drain 1 Ω Dynamic Parameters Input Capacitance Ciss 1135 Output Capacitance Coss Reverse Transfer Capacitance Crss 18 Total Gate Charge Qg 16 Gate-Source Charge Qgs Gate-Drain Charge Qgd 2.4 Reverse Recovery Chrage Qrr 42 Reverse Recovery Time trr 39.8 Turn-on Delay Time tD(on) 39.2 Turn-on Rise Time tr VDS=50V,VGS=0V,f=1MHZ 399 pF Switching Parameters VGS=10V,VDS=50V,ID=25A 5.6 nC IF=20A, di/dt=100A/us 11 ns VGS=10V, VDD=50V,ID=25A RGEN=2.2Ω Turn-off Delay Time Turn-off fall Time A. B. C. D. tD(off) 53.2 tf 15.8 Repetitive rating; pulse width limited by max. junction temperature. VDD=50V, RG=25Ω, L=0.5mH, IAS=25A,. Pd is based on max. junction temperature, using junction-case thermal resistance. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. May 2019 Version1.0 2/7 Ascend Semicondutor Co.,Ltd ASDM100R160NKQ 100V N-Channel Power MOSFET Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. : On-Resistance vs. Drain Current and Gate Voltage May 2019 Version1.0 3/7 Figure6.Normalized On-Resistance Ascend Semicondutor Co.,Ltd ASDM100R160NKQ 100V N-Channel Power MOSFET Figure7. Drain current Figure8.Safe Operation Area Figure9.Normalized Maximum Transient thermal impedance May 2019 Version1.0 4/7 Ascend Semicondutor Co.,Ltd ASDM100R160NKQ 100V N-Channel Power MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM100R160NKQ-R 100R160N TO-252 Tape&Reel 2500/Reel MARKING PACKAGE TO-252 May 2019 Version1.0 100R160N 5/7 Ascend Semicondutor Co.,Ltd ASDM100R160NKQ 100V N-Channel Power MOSFET TO-252 May 2019 Version1.0 6/7 Ascend Semicondutor Co.,Ltd ASDM100R160NKQ 100V N-Channel Power MOSFET IMPORTANT NOTICE Xi‘an Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Should Customers purchase or use Xi‘an Ascend Semiconductor Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Xi‘an Ascend Semiconductor Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. www.ascendsemi.com May 2019 Version1.0 7/7 Ascend Semicondutor Co.,Ltd