ASDM40N80KQ-R

ASDM40N80KQ 40V N-Channel MOSFET Features Product Summary Low On-Resistance • Fast Switching Speed • 100% avalanche tested • Lead Free and Green Devices • Available (RoHS Compliant) VDSS 40 V RDS(ON)-Typ@VGS=10V 4.0 mΩ ID 80 A Application DC/DC Converters • On board power for server • Synchronous rectification • N-channel Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 40 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C TC=25°C 80 A TC=25°C 320 A TC=25°C 80 TC=100°C 51 TA=25°C 25 TA=70°C 19 TC=25°C 65 TC=100°C 26 TA=25°C 4.2 TA=70°C 2.7 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current V Mounted on Large Heat Sink IDP ① 300μs Pulse Drain Current Tested Continuous Drain Current@TC(VGS=10V) ② ID Continuous Drain Current@TA(VGS=10V) ③ Maximum Power Dissipation@TC PD Maximum Power Dissipation@TA Parameter Symbol RJC RJA ③ ③ A W Rating Unit Thermal Resistance-Junction to Case 2.4 °C/W Thermal Resistance-Junction to Ambient 62 °C/W 121 mJ Drain-Source Avalanche Ratings EAS ④ Avalanche Energy, Single Pulsed NOV 2018 Version2.0 1/8 Ascend Semicondutor Co.,Ltd ASDM40N80KQ 40V N-Channel MOSFET Electrical Characteristics (TC=25°C Unless Otherwise Noted) Symbol Parameter Test Condition LIMIT Min. Typ. Max. Unit Static Characteristics BVDSS IDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA Zero Gate Voltage Drain Current VGS(th) IGSS ⑤ RDS(ON) V VDS=40V, VGS=0V 1 TJ=125°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±20V, VDS=0V Drain-Source On-state Resistance 40 30 1 µA 2.5 V ±100 nA VGS=4.5V, IDS=35A 5.5 6.0 mΩ VGS=10V, IDS=50A 4.0 4.5 mΩ 1.2 V Diode Characteristics ⑤ VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=50A, VGS=0V ISD=50A, dlSD/dt=100A/µs 18 ns 29 nC Ω ⑥ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz 1.3 Ciss Input Capacitance 3027 Coss Output Capacitance Crss Reverse Transfer Capacitance VGS=0V, VDS=20V, Frequency=1.0MHz td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) tf Turn-off Delay Time 1513 pF 155 13 VDD=20V,IDS=50A, VGEN=10V,RG=4.7Ω Turn-off Fall Time 21 29 ns 9 ⑥ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge NOV 2018 Version2.0 VDS=32V, VGS=10V, IDS=50A 29 5 nC 9 2/8 Ascend Semicondutor Co.,Ltd ASDM40N80KQ 40V N-Channel MOSFET Typical Characteristics Power Dissipation 70 80 ID - Drain Current (A) 60 PD - Power (W) Drain Current 90 50 40 30 20 10 70 60 50 40 30 20 10 0 VGS=10V 0 0 25 50 75 100 125 25 150 50 TJ - Junction Temperature (°C) 10 RDS(ON) - On - Resistance (mΩ) RDS(ON) limited ID - Drain Current (A) 100 10µs 100µs 1ms 10ms DC 1 TC=25°C 0.1 0.01 0.1 1 10 100 100 125 150 TJ - Junction Temperature (°C) Safe Operation Area 1000 75 Drain Current 10 Ids=50A 8 6 4 2 0 0 1000 1 2 3 7 8 10 VGS - Gate-Source Voltage (V) VDS - Drain-Source Voltage (V) ZthJC - Thermal Response (°C/W) Thermal Transient Impedance 10 Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse 1 0.1 Single Pulse 0.01 RθJC=1.92°C/W 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 Square Wave Pulse Duration (sec) NOV 2018 Version2.0 3/8 Ascend Semicondutor Co.,Ltd ASDM40N80KQ 40V N-Channel MOSFET Typical Characteristics Output Characteristics VGS=10V，8V，7V 80 5V 60 3V 40 20 2V 0 0 1 2 3 4 Drain-Source On Resistance 10 5 RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) 100 8 VGS=4.5V 6 4 VGS=10V 2 0 0 20 VDS - Drain-Source Voltage (V) 2.0 Drain-Source On Resistance 1.5 1.0 TJ=25°C Rds(on)=3.5mΩ -25 0 25 50 75 100 125 TJ=150°C 0.1 0.2 150 0.4 VGS - Gate-Source Voltage (V) C - Capacitance (pF) 3200 Ciss Coss 800 Crss 1 1 1.2 1.4 10 VDS=24V IDS=50A 9 8 7 6 5 4 3 2 1 0 10 100 0 10 20 QG - Gate Charge (nC) VDS - Drain-Source Voltage (V) NOV 2018 Version2.0 0.8 Gate Charge Frequency=1.0MHz 0 0.6 VSD - Source-Drain Voltage (V) Capacitance 4000 1600 TJ=25°C 1 TJ - Junction Temperature (°C) 2400 100 10 0.0 -50 80 Source-Drain Diode Forward 100 VGS=10V IDS=50A 0.5 60 ID - Drain Current (A) IS - Source Current (A) Normalized On Resistance 2.5 40 4/8 Ascend Semicondutor Co.,Ltd 30 ASDM40N80KQ 40V N-Channel MOSFET Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms NOV 2018 Version2.0 5/8 Ascend Semicondutor Co.,Ltd ASDM40N80KQ 40V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking ASDM40N80KQ-R 40N80 Package TO-252 Tape&Reel Quantity 2500/Reel MARKING PACKAGE TO-252 NOV 2018 Version2.0 Packing 40N80 6/8 Ascend Semicondutor Co.,Ltd ASDM40N80KQ 40V N-Channel MOSFET TO-252 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 D 6.500 6.700 0.256 0.264 D1 5.100 5.460 0.201 0.215 D2 0.483 TYP. 0.190 TYP. E 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 L 9.800 10.400 0.386 0.409 L1 L2 2.900 TYP. 1.400 L3 0.114 TYP. 1.700 0.055 1.600 TYP. 0.067 0.063 TYP. L4 0.600 1.000 0.024 0.039 Φ 1.100 1.300 0.043 0.051 θ 0° 8° 0° 8° h 0.000 0.300 0.000 0.012 V NOV 2018 Version2.0 5.350 TYP. 0.211 TYP. 7/8 Ascend Semicondutor Co.,Ltd ASDM40N80KQ 40V N-Channel MOSFET IMPORTANT NOTICE Xi‘an Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Xi‘an Ascend Semiconductor Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Xi‘an Ascend Semiconductor Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Xi‘an Ascend Semiconductor Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Ascendsemi Incorporated and all the companies whose products are represented on Xi‘an Ascend Semiconductor Incorporated website, harmless against all damages. Xi‘an Ascend Semiconductor Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Xi‘an Ascend Semiconductor Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Xi‘an Ascend Semiconductor Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. www.ascendsemi.com NOV 2018 Version2.0 8/8 Ascend Semicondutor Co.,Ltd