ASDM100R750PKQ-R

ASDM100R750PKQ -100V P-Channel MOSFET Product Summary General Features ● Split gate trench MOSFET technology -100 V R DS(on),Typ@ VGS=-10 V 75 mΩ ID -20 ● Low RDS(on) & FOM V DS ● Extremely low switching loss ● Excellent stability and uniformity A Application ●Power management ●Portable equipment D G S TO-252 P-channel Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS -100 V Gate-source Voltage VGS ±20 V -20 Tc=25℃ Drain Current ID A -14 Tc=100℃ Pulsed Drain Current A IDM -80 A Avalanche energy B EAS 100 mJ 72 Tc=25℃ Total Power Dissipation PD W 28.8 Tc=100℃ Junction and Storage Temperature Range TJ ,TSTG ℃ -55～+150 Thermal resistance Parameter Thermal Resistance Junction-to-Ambient D Symbol t≤10S Typ Max 15 20 40 50 1.35 1.7 Units RθJA Thermal Resistance Junction-to-Ambient D Steady-State Thermal Resistance Junction-to-Case Steady-State NOV 2018 Version1.0 1/7 RθJC Ascend Semicondutor Co.,Ltd ℃/W ASDM100R750PKQ -100V P-Channel MOSFET Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min BVDSS VGS= 0V, ID=-250μA -100 Typ Max Units Static Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current IDSS VDS=-100V,VGS=0V Tj=25℃ -1 Tj=55℃ -5 Tj=125℃ -10 IGSS VGS= ±20V, VDS=0V Gate Threshold Voltage VGS(th) VDS= VGS, ID=-250μA Static Drain-Source On-Resistance RDS(ON) Gate-Body Leakage Current Diode Forward Voltage Maximum Body-Diode Continuous Current V μA ±100 nA -1.8 -2.5 V VGS= -10V, ID=-10A 75 95 VGS= -4.5V, ID=-5A 85 110 -1.0 mΩ VSD IS=-10A,VGS=0V IS -1.3 V -20 A Dynamic Parameters Input Capacitance Ciss 1051 Output Capacitance Coss Reverse Transfer Capacitance Crss 25 Total Gate Charge Qg(-10V) 20.1 Total Gate Charge Qg(-4.5V) VDS=-50V,VGS=0V,f=1MHZ 119 pF Switching Parameters 9.7 VGS=-10V,VDS=-50V,ID=-5A Gate-Source Charge Qgs 3.9 Gate-Drain Charge Qgd 4.3 Reverse Recovery Chrage Qrr nC 140 IF=-5A, di/dt=100A/us Reverse Recovery Time trr 70 Turn-on Delay Time tD(on) 10 Turn-on Rise Time tr Turn-off Delay Time tD(off) Turn-off fall Time A. B. C. D. VGS=-10V,VDD=-50V,RL=2.5Ω RGEN=6Ω tf 30 ns 77 81 Repetitive rating; pulse width limited by max. junction temperature. VDD=50V, RG=25Ω, L=0.5mH. Pd is based on max. junction temperature, using junction-case thermal resistance. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on RθJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. NOV 2018 Version1.0 2/7 Ascend Semicondutor Co.,Ltd ASDM100R750PKQ -100V P-Channel MOSFET Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. : On-Resistance vs. Gate to Source Voltage NOV 2018 Version1.0 3/7 Figure6.Normalized On-Resistance Ascend Semicondutor Co.,Ltd ASDM100R750PKQ -100V P-Channel MOSFET Figure7. Drain current Figure8.Safe Operation Area Figure9.Normalized Maximum Transient thermal impedance NOV 2018 Version1.0 4/7 Ascend Semicondutor Co.,Ltd ASDM100R750PKQ -100V P-Channel MOSFET Ordering and Marking Information Ordering Device No. ASDM100R750PKQ-R Marking Package Packing 100R750P TO-252 Tape&Reel 2500/Reel MARKING PACKAGE TO-252 NOV 2018 Version1.0 Quantity 100R750P 5/7 Ascend Semicondutor Co.,Ltd ASDM100R750PKQ -100V P-Channel MOSFET TO-252 NOV 2018 Version1.0 6/7 Ascend Semicondutor Co.,Ltd ASDM100R750PKQ -100V P-Channel MOSFET IMPORTANT NOTICE Xi‘an Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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