ASDM60N30KQ-R

ASDM60N30KQ 60V N-Channel MOSFET Product Summary General Features ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability BVDSS 60 V RDS(on),Typ.@ VGS=10 V 23 mΩ ID 30 A Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply D G S TO-252 Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol Parameter Max. Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V TC = 25℃ 30 A TC = 100℃ 20 A 120 A 72 mJ 55 W 2.7 ℃/W -55 to +175 ℃ ID IDM EAS PD RθJC TJ, TSTG Continuous Drain Current Pulsed Drain Current note1 Single Pulsed Avalanche Power Dissipation Energy note2 TC = 25℃ Thermal Resistance, Junction to Case Operating and Storage Temperature Range DEC 2018 Version1.0 1/8 Ascend Semicondutor Co.,Ltd ASDM60N30KQ 60V N-Channel MOSFET Electrical Characteristics (TJ=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 60 - - V IDSS Zero Gate Voltage Drain Current VDS=48V, VGS=0V, - - 1.0 μA IGSS Gate to Body Leakage Current VDS=0V, VGS=±20V - - ±100 nA 1.0 1.6 2.5 V On Characteristics VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA RDS(on) Static Drain-Source on-Resistance VGS=10V, ID=15A - 23 36 note3 VGS=4.5V, ID=10A - 29 42 - 1562 - pF - 75.4 - pF - 66.8 - pF - 25 - nC - 4.5 - nC - 6.5 - nC - 7.5 - ns - 21 - ns - 16 - ns - 23.5 - ns mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS=25V, VGS=0V, f=1.0MHz VDS=30V, ID=15A, VGS=10V Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf VDS =30V, ID=15A, RG=1.8Ω, VGS=10V Turn-off Fall Time Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - 30 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 120 A VSD Drain to Source Diode Forward Voltage - - 1.2 V - 29 - ns - 45 - nC trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge VGS=0V, IS=30A IF=15A, dI/dt=100A/μs Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. EAS condition : TJ=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω 3. Pulse Test: Pulse Width≤300μs, Duty Cycle≤0.5% DEC 2018 Version1.0 2/8 Ascend Semicondutor Co.,Ltd ASDM60N30KQ 60V N-Channel MOSFET Test Circuit Figure1:Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms DEC 2018 Version1.0 3/8 Ascend Semicondutor Co.,Ltd ASDM60N30KQ 60V N-Channel MOSFET Typical Electrical and Thermal Characteristics (Curves) 40 ID (A) ID (A) 30 10V 4.5V 25 4V 30 20 TJ=125℃ 15 20 V GS=2V 25℃ 10 10 5 VDS(V) 0 0 1 2 3 4 0 5 VGS(V) 0 1.6 2.4 4.0 IS(A) RDS(ON) (mΩ) 1.0E+01 35 1.0E+00 VGS=4.5V 30 1.0E-01 125℃ TJ=25℃ 1.0E-02 25 VGS=10V 20 1.0E-03 15 1.0E-04 ID(A) 10 0 5 10 15 20 1.0E-05 0.0 VGS(V) 10 104 VDS=30V ID=15A 8 0.2 0.4 VSD(V) 0.6 0.8 1.0 Figure 4: Body Diode Characteristics Figure 3:On-resistance vs. Drain Current 6 4 C(pF) 103 C iss 102 Coss Crss 2 0 3.2 Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics 40 0.8 Qg(nC) 0 5 10 15 20 25 0 Figure 5: Gate Charge Characteristics DEC 2018 Version1.0 VDS(V) 101 10 20 30 40 50 Figure 6: Capacitance Characteristics 4/8 Ascend Semicondutor Co.,Ltd ASDM60N30KQ 60V N-Channel MOSFET RDS(on) VBR(DSS) 2.5 1.3 1.2 2.0 1.1 1.5 1.0 1.0 0.9 Tj (℃) 0 -100 -50 0 50 100 150 0.5 -100 200 0 50 100 150 200 Figure 8: Normalized on Resistance vs. Junction Temperature Figure 7: Normalized Breakdown Voltage vs. Junction Temperature ID(A) 1000 Tj (℃) -50 36 ID(A) Limited by R DS(on) 30 10μs 100 24 100μs 1ms 10 18 10ms 100ms 12 DC TC=25 ℃ Single pulse 1 0.1 0.1 6 VDS (V) 10 1 0 100 25 50 Tc (℃ ) 75 100 125 150 175 Figure 10: Maximum Continuous Drain Current vs. Case Temperature Figure 9: Maximum Safe Operating Area 101 0 ZthJ-C(℃/W) 10-1 D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse 10-2 10-3 -6 10 10-5 10-4 10-3 TP(s) 10-2 PDM 100 t1 t2 Notes: 1.Duty factor D=t1/t2 2.Peak TJ=PDM*ZthJC+TC 10-1 100 101 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Case DEC 2018 Version1.0 5/8 Ascend Semicondutor Co.,Ltd ASDM60N30KQ 60V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM60N30KQ-R 60N30 TO-252 Tape&Reel 2500/Reel MARKING PACKAGE TO-252 DEC 2018 Version1.0 60N30 6/8 Ascend Semicondutor Co.,Ltd ASDM60N30KQ 60V N-Channel MOSFET 6\PERO $ 'LPHQVLRQVLQ0LOOLPHWHUV 0LQ 0D[ 0LQ 0D[     $     $     E     E     F     F     '     '     (     (     +     7