ASDM100N15KQ-R

ASDM100N15KQ 100V N-CHANNEL MOSFET Features        Product Summary 100V,15A RDS(ON) =95mΩ (Typ.) @ VGS = 10V RDS(ON) =100mΩ (Typ.) @ VGS = 4.5V Low Total Gate Charge Low Reverse Transfer Capacitance Improved dv/dt Capability Fast Switching Speed 100 V DS R DS(on),TYP@ VGS=10 V ID V 95 mΩ 15 A Application  Uninterruptible Power Supply(UPS)  Inverter System Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol Parameter Max. Units VDSS Drain-Source Voltage 100 V VGSS Gate-Source Voltage ±20 V TC = 25℃ 15 A TC = 100℃ 10 A 60 A 55 W 2.72 ℃/W -55 to +175 ℃ ID Continuous Drain Current IDM Pulsed Drain Current PD Power Dissipation RθJC TJ, TSTG note1 TC = 25℃ Thermal Resistance, Junction to Case Operating and Storage Temperature Range NOV 2018 Version1.0 1/7 Ascend Semicondutor Co.,Ltd ASDM100N15KQ 100V N-CHANNEL MOSFET Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units 100 - - V Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID=250μA IDSS Zero Gate Voltage Drain Current VDS =100V, VGS = 0V, TJ= 25℃ - - 1.0 μA IGSS Gate to Body Leakage Current VDS =0V,VGS = ±20V - - ±100 nA Gate Threshold Voltage VDS= VGS, ID=250μA 1.0 1.6 3.0 V On Characteristics VGS(th) RDS(on) gFS Static Drain-Source on-Resistance VGS =10V, ID =10A - 95 110 mΩ note2 VGS =4.5V, ID =5A - 100 130 mΩ Forward Transconductance VGS =5V, ID =4A 2 - - S - 932 - pF - 37 - pF - 21 - pF - 19.2 - nC - 3.4 - nC - 6.1 - nC - 12.6 - ns - 6 - ns - 32.5 - ns - 4.3 - ns Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS =50V, VGS = 0V, f = 1.0MHz VDS =80V, ID =10A Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf Turn-off Fall Time V GS=10V, VDD=50V, RL=2.8Ω, RREN =6Ω, ID=10A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - 15 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 60 A VSD Drain to Source Diode Forward Voltage - - 1.2 V VGS = 0V, IS=10A Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% NOV 2018 Version1.0 2/7 Ascend Semicondutor Co.,Ltd ASDM100N15KQ 100V N-CHANNEL MOSFET Typical Performance Characteristics Figure1:Gate Charge Test Circuit & Waveform Figure 2: Resistive Switching Test Circuit & Waveforms Figure 3:Unclamped Inductive Switching Test Circuit & Waveforms NOV 2018 Version1.0 3/7 Ascend Semicondutor Co.,Ltd ASDM100N15KQ 100V N-CHANNEL MOSFET Figure 4:Peak Diode Recovery dv/dt Test Circuit & Waveforms (For N-channel) NOV 2018 Version1.0 4/7 Ascend Semicondutor Co.,Ltd ASDM100N15KQ 100V N-CHANNEL MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing ASDM100N15KQ-R 100N15 TO-252 Tape&Reel Quantity 2500/Reel MARKING PACKAGE Lot Number TO-252 100N15 Date Code NOV 2018 Version1.0 5/7 Ascend Semicondutor Co.,Ltd ASDM100N15KQ 100V N-CHANNEL MOSFET Package Mechanical Data E Dimensions A B2 Ref. C2 Millimeters L V1 D H C DETAIL A V2 D1 V1 A2 V1 E1 Max. 2.10 2.50 0.083 0.098 A2 0 0.10 0 0.004 B 0.66 0.86 0.026 0.034 B2 5.18 5.48 0.202 0.216 C 0.40 0.60 0.016 0.024 C2 0.44 0.58 0.017 0.023 D 5.90 6.30 0.232 0.248 6.80 0.252 5.30REF 0.209REF E 6.40 E1 4.63 G 4.47 4.67 H 9.50 10.70 0.374 0.421 L 1.09 1.21 0.043 0.048 L2 1.35 1.65 0.053 0.176 7° V2 0.268 0.182 V1 L2 Typ. Min. D1 G Inches Max. A B Typ. Min. 0.184 0.065 7° 0° 6° 0° 6° DETAIL A TO-252 Reel Spectification-TO-252 B D0 P0 P2 E t1 A A D1 B0 F W Dimensions T K0 P1 A0 B 5° 20 Φ 32 9 A A B B Φ13 NOV 2018 Version1.0 6/7 Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max. W 15.90 16.00 16.10 0.626 0.630 0.634 E 1.65 1.75 1.85 0.065 0.069 0.073 F 7.40 7.50 7.60 0.291 0.295 0.299 D0 1.40 1.50 1.60 0.055 0.059 0.063 D1 1.40 1.50 1.60 0.055 0.059 0.063 P0 3.90 4.00 4.10 0.154 0.157 0.161 P1 7.90 8.00 8.10 0.311 0.315 0.319 P2 1.90 2.00 2.10 0.075 0.079 0.083 A0 6.85 6.90 7.00 0.270 0.271 0.276 B0 10.45 10.50 10.60 0.411 0.413 0.417 K0 2.68 2.78 2.88 0.105 0.109 0.113 T 0.24 t1 0.10 10P0 39.80 0.27 0.009 0.011 0.004 40.00 40.20 1.567 1.575 1.583 Ascend Semicondutor Co.,Ltd ASDM100N15KQ 100V N-CHANNEL MOSFET IMPORTANT NOTICE Xi‘an Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Should Customers purchase or use Xi‘an Ascend Semiconductor Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Xi‘an Ascend Semiconductor Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. www.ascendsemi.com NOV 2018 Version1.0 7/7 Ascend Semicondutor Co.,Ltd