ASDM20N60KQ-R

ASDM20N60 20V N-Channel MOSFET Product Summary General Features ● Low Gate Charge ● Enhancement mode 20 V RDS(on),Typ.@ VGS=4.5 V 5 mΩ ID 60 A BVDSS ● Fast Switching ● High Power and Current Handling Capability $SSOLFDWLRQV ● '&'&SULPDU\EULGJH ● '&'&6\QFKURQRXVUHFWLILFDWLRQ ● '&)$1 D G 1 s TO-252 N-channel Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±12 Maximum Junction Temperature 150 °C -55 to 150 °C 60 A TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current TC=25°C V Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current(VGS=8V) PD RθJC Maximum Power Dissipation Thermal Resistance-Junction to Case ① TC=25°C 200 TC=25°C TC=100°C 60 40 TC=25°C 60 TC=100°C 25 A ② A W 3 °C/W 120 mJ Drain-Source Avalanche Ratings EAS ③ DEC 2018 Version1.0 Avalanche Energy, Single Pulsed 1/9 Ascend Semicondutor Co.,Ltd ASDM20N60 20V N-Channel MOSFET Electrical Characteristics Symbol (TA=25°C Unless Otherwise Noted) Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) Zero Gate Voltage Drain Current Test Condition VGS=0V, IDS=250µA Min. Typ. 1 Gate Leakage Current VGS=±12V, VDS=0V 30 0.4 Unit V TJ=85°C VDS=VGS, IDS=250µA Max. 20 VDS= 20V, VGS=0V Gate Threshold Voltage ④ ASDM20N60 0.7 µA 1.5 V ±100 nA VGS= 4.5V, IDS=25A 5 6.5 mΩ VGS= 2.5V, IDS=20A 7 10 mΩ 1.2 V Drain-Source On-state Resistance Diode Characteristics VSD ④ Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=25A, VGS=0V 14 ns 32 nC VGS=0V,VDS=0V,F=1MHz 1.2 Ω VGS=0V, VDS=15V, Frequency=1.0MHz 980 ISD=25A, dlSD/dt=100A/µs ⑤ Dynamic Characteristics RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf Turn-off Fall Time Gate Charge Characteristics Qg 80 6 VDD=15V, RL=15Ω, IDS=25A, VGEN= 8V, RG=6Ω 10 ns 24 5 ⑤ Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: pF 160 18 VDS=15V, VGS= 8V, IDS=25A 2.5 23 nC 5 Pulse width limited by safe operating area. Calculated continuous current based on maximum allowable junction temperature. Current limited by bond wire. Limited by TJmax, IAS =20A, VDD = 15V, RG = 50Ω , Starting TJ = 25°C. Pulse test ; Pulse width≤300µs, duty cycle≤2%. Guaranteed by design, not subject to production testing. DEC 2018 Version1.0 2/9 Ascend Semicondutor Co.,Ltd ASDM20N60 20V N-Channel MOSFET Typical Characteristics Drain Current Ptot - Power (W) ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area ID - Drain Current (A) Normalized Effective Transient Thermal Transient Impedance VDS - Drain-Source Voltage (V) DEC 2018 Version1.0 Square Wave Pulse Duration (sec) 3/9 Ascend Semicondutor Co.,Ltd ASDM20N60 20V N-Channel MOSFET Typical Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (mΩ) Output Characteristics VDS - Drain-Source Voltage (V) ID - Drain Current (A) Gate Threshold Voltage RDS(ON) - On - Resistance (m) Normalized Threshold Voltage Drain-Source On Resistance VGS - Gate-Source Voltage (V) DEC 2018 Version1.0 Tj - Junction Temperature (°C) 4/9 Ascend Semicondutor Co.,Ltd ASDM20N60 20V N-Channel MOSFET Typical Characteristics Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) Capacitance VDS - Drain-Source Voltage (V) DEC 2018 Version1.0 QG - Gate Charge (nC) 5/9 Ascend Semicondutor Co.,Ltd ASDM20N60 20V N-Channel MOSFET Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms DEC 2018 Version1.0 6/9 Ascend Semicondutor Co.,Ltd ASDM20N60 20V N-Channel MOSFET Ordering and Marking Information Device Marking ASDM20N60 20N60 Package Packaging Quantity TO-252 Tape&Reel 2500/Reel MARKING PACKAGE Lot Number 20N60 Lead Free Date Code TO-252 Lot Number 20N60G Halogen Free Date Code Ordering Number Lead Free Halogen Free ASDM20N60-KQ-R ASDM20N60G-KQ-R Package TO-252 1 R:Tape Reel ASDM20N60G-KQ -R 2 KQ: TO-252 1 Packing Type 3 blank : Lead Free G:Halogen Free 2 Package Type 3 Green Package DEC 2018 Version1.0 7/9 Ascend Semicondutor Co.,Ltd ASDM20N60 20V N-Channel MOSFET 6\PERO $ 'LPHQVLRQVLQ0LOOLPHWHUV 'LPHQVLRQVLQ,QFKHV 0LQ 0D[ 0LQ 0D[     $     $     E     E     F     F     '     '     (     (     +    7