ASDM60N50KQ-R

ASDM60N50KQ 60V N-Channel MOSFET Product Summary FEATURE l Low gate charge l Low Ciss l Fast switching l 100% avalanche tested l Improved dv/dt capability 60 V R DS(on),Typ@ VGS=10 V 8.5 mΩ ID 50 A V DS Schematic diagram TO-252-2L top view Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS ±20 V ID 50 A 42 A IDM 200 A PD 62.5 W 0.73 W/℃ EAS 31 mJ TJ,TSTG -55 To 150 ℃ Drain Current-Continuous Drain Current-Continuous(TC=100℃) ID (100 ) ℃ Pulsed Drain Current Maximum Power Dissipation Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range 2.0 NOV 2018 Version1.0 1/9 Ascend Semicondutor Co.,Ltd ASDM60N50KQ 60V N-Channel MOSFET Electrical Characteristics (Tc=25℃,unless otherwise noted) Parameter Off Characteristics Drain-Source Breakdown Voltage Breakdown Temperature Coefficient Symbol BVDSS ΔBVDSS Test Conditions VGS=0V,ID=250uA Reference to 25℃， Min Typ Max Units 60 － － V － 0.021 － V/℃ /ΔTJ ID=250uA Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V － － 1 uA Gate-Body Leakage Current,Forward IGSSF VGS=20V,VDS=0V － － 100 nA Gate-Body Leakage Current,Reverse IGSSR VGS=-20V,VDS=0V － － -100 nA On Characteristics Gate-Source Threshold Voltage VGS(th) VDS=VGS,ID=250uA 1.0 － 2..5 V Drain-Source On-State Resistance RDS(on) VGS=10V,ID=20A － 8.5 9 VGS=4.5V,ID=20A － 13 15 mΩ Dynamic Characteristics Input Capacitance Ciss VDS=30V,VGS=0V, － 880 － pF Output Capacitance Coss f=1.0MHZ － 255 － pF Reverse Transfer Capacitance Crss － 16 － pF Switching Characteristics td(on) VDD=30V,VGS=10V, － 8.8 － ns tr RG=2.7Ω (Note3,4) － 42 － ns td(off) － 21.5 － ns Turn-Off Fall Time tf － 5.4 － ns Total Gate Charge Qg VDD=30V,ID=12A, － 18 － nC Gate-Source Charge Qgs VGS=10V, (Note3,4) － 3.7 － nC Gate-Drain Charge Qgd － 2.9 － nC Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Drain-Source Body Diode Charcteristics and Maximum Ratings Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VSD IS=1A,VGS=0V － － 1.0 V trr VR=30V,IF=12A, － 78 － ns Qrr dIF/dt=300A/us － 192 － nC Notes 1. Repetitive Rating:pulse width limited by maximum junction temperature. 2. VDD=30V,L=0.3mH,Rg=10Ω,IAS=10A , TJ=25℃. 3. ISD≤ID,dI/dt=200A/us,VDD≤BVDSS,starting TJ=25℃,Pulse width≤300us;duty cycle≤2%. 4. Repetitive rating; pulse width limited by maximum junction temperature. NOV 2018 Version1.0 2/9 Ascend Semicondutor Co.,Ltd ASDM60N50KQ 60V N-Channel MOSFET NOV 2018 Version1.0 3/9 Ascend Semicondutor Co.,Ltd ASDM60N50KQ 60V N-Channel MOSFET NOV 2018 Version1.0 4/9 Ascend Semicondutor Co.,Ltd ASDM60N50KQ 60V N-Channel MOSFET 10 V 4V 10 3.5V VGS,Gate-to-Source Voltage(V) ID,Drain-to-Source Current(A) 50 40 30 20 3V 10 VGS=2.5V 0 0 1 2 3 4 VDS,Drain-to-Source Voltage(V) 4 2 0 0 10 15 5 Qg ,Total Gate Charge(nC) Ciss 1000 TJ =25℃ Capacitance(pF) TJ =150℃ 10 1 100 Coss 10 Crss VGS =0V 0.1 20 10000 0.2 0.4 0.6 0.8 1.0 1.2 VDS,Source-Drain Voltage(V) 1 1.4 140 2.0 120 1.8 RDS(on),Drain-to-Source On Resistance (Normalized) ISD , Reverse Drain Current(A) 6 5 100 VDS , Drain-to-Source Brakdown Voltage(V) 8 100 80 60 40 20 -60 -40 -20 0 25 50 75 100 125 150 175 TJ , Junction Temperature(℃) NOV 2018 Version1.0 0 60 ID=20A 1.6 VGS=10V 1.4 VGS=4.5V 1.2 1.0 0.8 5/9 10 20 30 40 50 VDS,Drain-to-Source Voltage(V) 0 75 100 125 150 50 25 TJ , Junction Temperature(℃) Ascend Semicondutor Co.,Ltd ASDM60N50KQ 60V N-Channel MOSFET RDS(ON) , Rrain-Source On-Resistance (mΩ) 100 ID, Drain Current(A) 15 Operation in this Area Limited by RDS(on) IDM=Limited 100μs 10 1ms 10ms DC Limited by RDS(on) 1 0.1 TC=25℃ TJ=150℃ BVDSS Limited Single Pulse 0.01 0.1 1 10 100 VDS,Drain-to-Source Voltage(V) VGS =10V 1 10 ID, Drain Current(A) 100 5 VTH , Gate Threshold Voltage(V) EAS , Avalanche Energy(mJ) VGS =4.5V 10 5 0.1 37.5 30 22.5 15 7.5 0 Common Source Tc=25℃ Pulse Test 4 3 2 1 0 -80 25 50 75 100 125 150 TCH , Channel Temperature(Initial) (℃) Common Source VDS=10V ID=250uA Pulse Test -40 0 40 80 120 TC, Case Temperature(℃) 140 1 Nomalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 0.0001 0.001 0.01 0.1 1 Pulse Time(s) NOV 2018 Version1.0 6/9 Ascend Semicondutor Co.,Ltd 10 ASDM60N50KQ 60V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM60N50KQ-R 60N50 TO-252 Tape&Reel 2500/Reel MARKING PACKAGE 60N50 TO-252 NOV 2018 Version1.0 7/9 Ascend Semicondutor Co.,Ltd ASDM60N50KQ 60V N-Channel MOSFET TO-252 NOV 2018 Version1.0 8/9 Ascend Semicondutor Co.,Ltd ASDM60N50KQ 60V N-Channel MOSFET IMPORTANT NOTICE Xi‘an Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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