ASDM60P12KQ-R

ASDM60P12KQ -60V P-Channel MOSFET General Features Product Summary ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current BVDSS -60 V ● Excellent package for good heat dissipation RDS(on)Typ.@VGS=-10V 62 mΩ -12 A Application ID ● Load switch ● PWM application Schematic diagram TO-252-2L top view Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -12 A Pulsed Drain Current IDM -48 A Maximum Power Dissipation PD 50 W TJ,TSTG -55 To 175 ℃ Operating Junction and Storage Temperature Range 3.0 DEC 2018 Version1.0 1/7 Ascend Semicondutor Co.,Ltd ASDM60P12KQ -60V P-Channel MOSFET Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -60 - - V Zero Gate Voltage Drain Current IDSS VDS=-60V,VGS=0V - - -1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1.0 1.9 -2.5 V Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-14A - 62 70 mΩ VGS=-4.5V, ID=-10A - 78 90 mΩ VDS=-5V,ID=-14A - 10 - S - 968 - PF - 88 - PF - 36 - PF - 8 - nS Off Characteristics On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics gFS (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics VDS=-30V,VGS=0V, F=1.0MHz Crss (Note 4) Turn-on Delay Time td(on) Turn-on Rise Time tr VDD=-30V, RL=2Ω， - 4 - nS td(off) VGS=-10V,RG=3Ω - 32 - nS - 7 - nS - 25 - nC - 3 - nC - 7 - nC -1.2 V -12 A Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-30,ID=-14A, VGS=-10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) Diode Forward Current Reverse Recovery Time Reverse Recovery Charge (Note 2) VSD VGS=0V,IS=-14A IS trr TJ = 25°C, IF =- 14A di/dt = -100A/μs Qrr (Note3) - - - 25 nS - 31 nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production DEC 2018 Version1.0 2/7 Ascend Semicondutor Co.,Ltd ASDM60P12KQ -60V P-Channel MOSFET ID- Drain Current (A) Normalized On-Resistance Typical Electrical and Thermal Characteristics (Curves) TJ-Junction Temperature(℃) -Vds Drain-Source Voltage (V) Figure 4 Rdson-Junction Temperature ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge Is- Reverse Drain Current (A) Rdson On-Resistance(mΩ) Vgs Gate-Source Voltage (V) - ID- Drain Current (A) -Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current DEC 2018 Version1.0 Figure 6 Source- Drain Diode Forward 3/7 Ascend Semicondutor Co.,Ltd ASDM60P12KQ C Capacitance (pF) -60V P-Channel MOSFET TJ-Junction Temperature(℃) Figure 7 Capacitance vs Vds Figure 9 BVDSS vs Junction Temperature ID- Drain Current (A) -ID- Drain Current (A) -Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Safe Operation Area Figure 10 ID Current De-rating r(t),Normalized Effective Transient Thermal Impedance -Vds Drain-Source Voltage (V) Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance DEC 2018 Version1.0 4/7 Ascend Semicondutor Co.,Ltd ASDM60P12KQ -60V P-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package ASDM60P12KQ-R 60P12 TO-252 Tape&Reel Quantity 2500/Reel MARKING PACKAGE TO-252 DEC 2018 Version1.0 Packing 60P12 5/7 Ascend Semicondutor Co.,Ltd ASDM60P12KQ -60V P-Channel MOSFET TO-252 DEC 2018 Version1.0 6/7 Ascend Semicondutor Co.,Ltd ASDM60P12KQ -60V P-Channel MOSFET IMPORTANT NOTICE Xi‘an Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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