ASDM30N120KQ-R

ASDM30N120KQ 30V N-Channel MOSFET Product Summary Features  Enhancement mode V DS 30 V  Very low on-resistance RDS(on) @ VGS=4.5 V RDS(on),TYP@ VGS=10 V 2.5 mΩ  Fast Switching ID 120 A  100% Avalanche test  Pb-free lead plating; RoHS compliant Schematic diagram TO-252-2L top view Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage IS Diode continuous forward current ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① EAS PD Rating Unit 30 V TC =25°C 120 A TC =25°C 120 A TC =100°C 80 A TC =25°C 480 A 100 mJ 45 W ±20 V -55 to 150 °C Typical Unit Avalanche energy, single pulsed ② TC =25°C Maximum power dissipation VGS Gate-Source voltage TSTG TJ Storage and operating temperature range Thermal Characteristics Symbol Parameter R JC Thermal Resistance-Junction to Case 2.4 °C/W R JA Thermal Resistance Junction-Ambient 62 °C/W NOV 2018 Version1.0 1/7 Ascend Semicondutor Co.,Ltd ASDM30N120KQ 30V N-Channel MOSFET Symbol Parameter Condition Min. Typ. Max. Unit Static Electrical Characteristics @ Tj=25°C (unless otherwise stated) Drain-Source Breakdown Voltage VGS=0V ID=250μA 30 -- -- V Zero Gate Voltage Drain Current VDS=24V,VGS=0V -- -- 1 μA Zero Gate Voltage Drain Current( Tj=85°C VDS=24V,VGS=0V -- -- 30 μA IGSS Gate-Body Leakage Current VGS=±20V,VDS=0V -- -- ±100 nA VGS(TH) Gate Threshold Voltage VDS=VGS,ID=250μA 1.0 1.5 2.5 V RDS(ON) Drain-Source On-State Resistance③ VGS=10V, ID=30A -- 2.5 3.5 mΩ RDS(ON) Drain-Source On-State Resistance③ VGS=4.5V, ID=30A -- 3.9 4.5 mΩ V(BR)DSS IDSS Dynamic Electrical Characteristics @ Tj = 25°C (unless otherwise stated) Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=15V,VGS=0V, f=1MHz f=1MHz VDS=15V,ID=20A, VGS=10V -- 2921 -- pF -- 440 -- pF -- 416 -- pF -- 1.2 -- Ω -- 63 -- nC -- 13 -- nC -- 16 -- nC -- 14 -- nS Switching Characteristics t d(on) Turn-on Delay Time tr Turn-on Rise Time ID=20A, -- 18 -- nS t d(off) Turn-Off Delay Time RG=3Ω, -- 99 -- nS tf Turn-Off Fall Time -- 45 -- nS VDD=20V, VGS=10V Source- Drain Diode Characteristics@ Tj = 25°C (unless otherwise stated) VSD Forward on voltage ISD=20A,VGS=0V -- 0.79 1.2 V t rr Reverse Recovery Time Tj=25℃,Isd=20A, -- 32 -- nS Qrr Reverse Recovery Charge VGS=0V di/dt=100A/μs 31 nC NOTE: ① Repetitive rating; pulse width limited by max. junction temperature. ② Limited by TJmax, starting TJ = 25°C, L = 0.5mH,RG = 25Ω, IAS = 20A, VGS =10V. Part not recommended for use above this value ③ Pulse width ≤ 300μs; duty cycle≤ 2%. NOV 2018 Version1.0 2/7 Ascend Semicondutor Co.,Ltd ASDM30N120KQ 30V N-Channel MOSFET ID, Drain-Source Current (A) VGS(TH), Gate -Source Voltage (V) Typical Characteristics VDS, Drain -Source Voltage (V) Tj - Junction Temperature (°C) Fig1. Typical Output Characteristics Normalized On Resistance ID, Drain-Source Current (A) Fig2. VGS(TH) Gate Voltage Vs.Tj(°C) Tc,-Source Case Temperature VGS, Gate -Source Voltage (V) Tj - Junction Temperature (°C) Fig4. Normalized On-Resistance Vs. Tj ID - Drain Current (A) ISD, Reverse Drain Current (A) Fig3. Typical Transfer Characteristics VSD, Source-Drain Voltage (V) VDS, Drain -Source Voltage (V) Fig5. Typical Source-Drain Diode Forward Voltage NOV 2018 Version1.0 Fig6. Maximum Safe Operating Area 3/7 Ascend Semicondutor Co.,Ltd ASDM30N120KQ 30V N-Channel MOSFET C, Capacitance (pF) VGS, Gate-Source Voltage (V) Typical Characteristics VDS , Drain-Source Voltage (V) Qg -Total Gate Charge (nC) Fig8. Typical Gate Charge Vs.Gate-Source Voltage Thermal Resistance ZqJA Normalized Transient Fig7. Typical Capacitance Vs.Drain-Source Voltage Pulse Width (s) Fig9. Normalized Maximum Transient Thermal Impedance Fig10. Unclamped Inductive Test Circuit and waveforms NOV 2018 Version1.0 4/7 Fig11. Switching Time Test Circuit and waveforms Ascend Semicondutor Co.,Ltd ASDM30N120KQ 30V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package ASDM30N120KQ-R 30N120 TO-252 Quantity Tape&Reel 2500/Reel MARKING PACKAGE TO-252 NOV 2018 Version1.0 Packing 30N120 5/7 Ascend Semicondutor Co.,Ltd ASDM30N120KQ 30V N-Channel MOSFET TO-252 NOV 2018 Version1.0 6/7 Ascend Semicondutor Co.,Ltd ASDM30N120KQ 30V N-Channel MOSFET IMPORTANT NOTICE Xi‘an Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Xi‘an Ascend Semiconductor Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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