ASDM30N100KQ-R

ASDM30N100KQ 30V N-Channel MOSFET Features Product Summary •100% EAS Guaranteed •Green Device Available •Super Low Gate Charge •Excellent CdV/dt effect decline V DS 30 V R DS(on),Typ@ VGS=10 V 3.3 mΩ ID 100 A Advanced high cell density Trench technology Application •Lithium-Ion Secondary Batteries •Load Switch •DC-DC converters and Off-line UPS •Motor Control D 2 S 3 1 G 1 TO-252 Absolute Maximum Ratings Rating Symbol Parameter 10s Steady State Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 1,6 100 A 1,6 65 A ID@TC=100℃ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V 1 27.3 17.3 A Continuous Drain Current, VGS @ 10V 1 21.8 14 A 2 Pulsed Drain Current Single Pulse Avalanche Energy 3 Avalanche Current 400 A 175 mJ 53 A 79 W PD@TC=25℃ Total Power Dissipation 4 PD@TA=25℃ Total Power Dissipation 4 TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ 5 2 W Thermal Data Symbol RθJA RθJA RθJC NOV 2018 Version1.0 Parameter Typ. Thermal Resistance Junction-Ambient 1 Thermal Resistance Junction-Ambient (t ≤10s) 1 Thermal Resistance Junction-Case 1/7 1 Max. Unit --- 62 ℃/W --- 25 ℃/W --- 1.8 ℃/W Ascend Semicondutor Co.,Ltd ASDM30N100KQ 30V N-Channel MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Conditions Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) 2 Static Drain-Source On-Resistance Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.0213 --- V/℃ VGS=10V , ID=30A --- 3.3 4 VGS=4.5V , ID=15A --- 5.0 6 1.2 1.6 2.5 --- 5.73 --- VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA m V △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=30A --- 26.5 --- S Min. Typ. Max. Unit --- --- 100 A --- --- 400 A --- --- 1 V mV/℃ uA Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current Pulsed Source Current 2,5 Diode Forward Voltage 2 Conditions 1,5 VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=25V,VGS=10V,L=0.1mH,IAS=53A 4.The power dissipation is limited by 175℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. 6.Package limitation current is 85A. NOV 2018 Version1.0 2/7 Ascend Semicondutor Co.,Ltd ASDM30N100KQ 30V N-Channel MOSFET Typical Characteristics 210 5.0 ID=12A VGS=10V 150 4.5 VGS=7V 120 RDSON (mΩ) ID Drain Current (A) 180 VGS=5V 4.0 90 VGS=4.5V VGS=3V 60 3.5 30 0 0 0.3 0.6 0.9 1.2 3.0 1.5 2 VDS , Drain-to-Source Voltage (V) 4 6 8 10 VGS (V) Fig.2 On-Resistance vs. G-S Voltage Fig.1 Typical Output Characteristics 10 12 ID=15A VGS Gate to Source Voltage (V) IS Source Current(A) 10 8 6 TJ=175℃ TJ=25℃ 4 2 8 6 4 2 0 0 0 0.3 0.6 0.9 0 1.2 40 60 80 QG , Total Gate Charge (nC) VSD , Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse Fig.4 Gate-charge Characteristics 2.0 Normalized On Resistance 1.5 Normalized VGS(th) 20 1.5 1 1.0 0.5 0.5 0 -50 25 100 -50 175 100 175 TJ , Junction Temperature (℃) TJ ,Junction Temperature (℃ ) Fig.5 Normalized VGS(th) vs. TJ NOV 2018 Version1.0 25 Fig.6 Normalized RDSON vs. TJ 3/7 Ascend Semicondutor Co.,Ltd ASDM30N100 30V N-Channel MOSFET 1000.00 10000 F=1.0MHz 10us 100.00 Capacitance (pF) Ciss 100us 1000 ID (A) 10.00 Coss Crss 10ms 100ms DC 1.00 100 0.10 TC=25℃ Single Pulse 0.01 10 1 5 9 13 17 21 0.1 25 1 10 100 VDS (V) VDS Drain to Source Voltage(V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.3 0.1 0.1 0.05 PDM TON T 0.02 D = TON/T TJpeak = TC + PDM x RθJC SINGLE PULSE 0.01 0.01 0.00001 0.0001 0.001 0.1 0.01 1 10 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% BVDSS 1 L x IAS2 x 2 BVDSS BVDSS-VDD VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff VGS Fig.10 Switching Time Waveform NOV 2018 Version1.0 Fig.11 Unclamped Inductive Switching Waveform 4/7 Ascend Semicondutor Co.,Ltd ASDM30N100KQ 30V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing ASDM30N100KQ-R 30N100 TO-252 Tape&Reel Quantity 2500/Reel MARKING PACKAGE Lot Number TO-252 30N100 Date Code NOV 2018 Version1.0 5/7 Ascend Semicondutor Co.,Ltd ASDM30N100KQ 30V N-Channel MOSFET TO-252 NOV 2018 Version1.0 6/7 Ascend Semicondutor Co.,Ltd ASDM30N100KQ 30V N-Channel MOSFET IMPORTANT NOTICE Xi‘an Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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