SEBT3906U

SHANGHAI June 2006 MICROELECTRONCS CO., LTD. SEBT3906 U PNP switching transistor Features ● Low current (max. 100 mA). ● Low voltage (max. 40 V). Applications ● Telephony and professional communication equipment. DESCRIPTION ● PNP switching transistor in a SOT323 plastic package ● NPN complement: SEBT3904U. Absolute maximum ratings (Ta=25℃) Parameter Symbol CONDITIO NS open MIN. MAX. Unit − -60 V − -40 V − -6 V collector-base voltage VCBO collector-emitter voltage VCEO emitter-base voltage VEBO collector current DC IC − -200 mA peak collector current ICM − -200 mA peak base current IBM − -100 mA total power dissipation Ptot − 250 mW storage temperature Tstg −65 +150 °C junction temperature Tj − 150 °C Tamb −65 +150 °C operating ambient temperature emitter open base open collector Tamb £ 25 °C; note 1 Electrical characteristics (Ta=25℃) Parameter Symbol CONDITIONS Min. Max. Unit collector cut-off current ICBO IE = 0; VCB =-30V - -50 nA emitter cut-off current IEBO IC = 0; VEB =-6V - -50 nA SEBT3906 U VCE = 1 V; note 1; Fig.2 DC current gain hFE IC =-0.1 mA 60 - IC =-1 mA 80 - IC =-10 mA 100 300 IC =-50 mA 60 - IC =-100 mA 30 - IC =-10 mA; IB =-1 B collector-emitter saturationvoltage VCEsat mA IC =-50 mA; IB =-5 - -200 mV - -200 mV -650 -850 mV - -950 mV - 4 pF - 8 pF 300 - MHz - 5 dB B mA IC =-10 mA; IB =-1 B base-emitter saturation voltage VBEsat mA IC =-50 mA; IB =-5 B mA collector capacitance Cc IE = ie = 0; VCB = 5 V; f = 1 MHz IC = ic = 0; VBE = emitter capacitance Ce 500 mV; f = 1 MHz IC = 10 mA; VCE = transition frequency fT 20 V; f = 100 MHz IC = 100 mA; VCE noise figure F = 5 V; RS = 1 kW; f = 10 Hz to 15.7 kHz Switching times (between 10% and 90% levels); (see Fig.3) ton turn-on time - 65 ns td delay time - 35 ns tr rise time - 35 ns - 240 ns ICon = 10 mA; IBon = 1 mA; IBoff = -1 mA toff turn-off time ts storage time - 200 ns tf fall time - 50 ns ShangHai Sino-IC Microelectronics Co., Ltd. 2. SEBT3906 U ShangHai Sino-IC Microelectronics Co., Ltd. 3. SEBT3906 U SOT-323 PACKAGE OUTLINE ShangHai Sino-IC Microelectronics Co., Ltd. 4. SEBT3906 U The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC – Printed in China – All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: szrxw002@126.com Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronics Co., Ltd. 5.