MMBT7002W

MMBT7002W N-Channel Enhancement Mode Field Effect Transistor 1. Gate 2. Source 3. Drain SOT-323 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Drain Source Voltage Drain Gate Voltage (RGS  1 MΩ) Gate Source Voltage Drain Current Symbol Value Unit VDSS 60 V 60 V ± 20 ± 40 115 800 V VDGR Continuous Pulsed Continuous Pulsed Total Power Dissipation VGSS ID Ptot 200 Tj 150 O TStg - 55 to + 150 O Junction Temperature Storage Temperature Range mA mW C C Characteristics at Ta = 25 OC Parameter Drain Source Breakdown Voltage at ID = 10 µA Zero Gate Voltage Drain Current at VDS = 60 V Gate Source Leakage Current at ± VGS = 20 V Gate Source Threshold Voltage at VDS = VGS = 10 V, ID = 250 µA Static Drain Source On Resistance at VGS = 5 V, ID = 50 mA at VGS = 10 V, ID = 500 mA Drain Source On Voltage at VGS = 5 V, ID = 50 mA at VGS = 10 V, ID = 500 mA Forward Transconductance at VDS = 10 V, ID = 200 mA Input Capacitance at VDS = 25 V, f = 1 MHz Output Capacitance at VDS = 25 V, f = 1 MHz Reverse Transfer Capacitance at VDS = 25 V, f = 1 MHz Turn On Time at VDD = 30V, RL = 150Ω, ID = 0.2A, VGS = 10V, RGEN = 25Ω Turn Off Time at VDD = 30V, RL = 150Ω, ID = 0.2A, VGS = 10V, RGEN = 25Ω Symbol Min. Max. Unit BVDSS 60 - V IDSS - 1 µA ±IGSS - 100 nA VGS(th) 1 2.5 V RDS(ON) - 7.5 7.5 Ω VDS(ON) - 1.5 3.75 V gFS 80 - mS Ciss - 50 pF Coss - 25 pF Crss - 5 pF ton - 20 ns toff - 20 ns ® Dated: 23/05/2007 MMBT7002W ® Dated: 23/05/2007 SOT-323 Package Outline Package Outline Dimensions (Units: mm) M E S E T H C SEMTECH ELECTRONICS LTD. Subsidiary of Sino-Tech International (BVI) Limited ® Dated : 23/10/2010 Rev:01