DN3018KW

DN3018KW DN3018KW N-Channel Enhancement MOSFET General description N-Channel Enhancement Mode Field Effect Transistor FEATURES • ESD Protected Up to 2.5KV (HBM) • Trench Power MV MOSFET technology • Voltage controlled small signal switch • Low input Capacitance • Fast Switching Speed • Low Input / Output Leakage APPLICATIONS • Battery operated systems • Solid-state relays • Direct logic-level interface：TTL/CMOS V(BR)DSS 30 V RDS(on)MAX 8mΩ@ 10V 13mΩ@4.5V Device Marking Code: ID Device Type DN3018KW 0.3A Device Marking KN Maximum Ratings (Ratings at 25℃ ambient temperature unless otherwise specified.) Parameter Symbol Limit Unit Drain-source Voltage VDS 30 V Gate-source Voltage VGS ±20 V Drain Current ID 300 mA Pulsed Drain Current IDM 1.5 A Total Power Dissipation @ TA=25℃ PD 350 mW RθJA 357 ℃/ W TJ ,TSTG -55～+150 ℃ Thermal Resistance Junction-to-Ambient @ Steady State B Junction and Storage Temperature Range www.doeshare.net Page 1 of 5 DN3018KW Electrical Characteristics (Ratings at 25℃ Parameter ambient temperature unless otherwise specified). Symbol Conditions Min Typ Max Units Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 30 Zero Gate Voltage Drain Current IDSS VDS=30V,VGS=0V 1 μA IGSS1 VGS= ±20V, VDS=0V ±9 μA IGSS2 VGS= ±10V, VDS=0V ±200 nA IGSS3 VGS= ±5V, VDS=0V ±100 nA VGS(th) VDS= VGS, ID=250μA 1.1 1.5 V VGS= 10V, ID=300mA 2.5 8.0 VGS= 4.5V, ID=200mA 3.0 13.0 Static Parameter Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage Maximum Body-Diode Continuous Current 0.8 V RDS(ON) Ω VSD IS=300mA,VGS=0V IS 1.2 V 340 mA Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 18 VDS=30V,VGS=0V,f=1MHZ 12 pF 7 Switching Parameters Total Gate Charge Qg Turn-on Delay Time tD(on) Turn-off Delay Time tD(off) Reverse recovery Time trr VGS=10V,VDS=30V,ID=0.3A VGS=10V,VDD=30V, ID=300mA, RGEN=6Ω VGS=0V,IS=300mA,VR=25V, dIS/dt=100A/μs 1.7 2.4 nC 5 ns 17 30 ns Note : A.Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. B.Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. www.doeshare.net Page 2 of 5 DN3018KW Typical Characteristics Figure1. Output Characteristics Figure3. Capacitance Characteristics Figure5. Drain-Source on Resistance www.doeshare.net Figure2. Transfer Characteristics Figure4. Gate Charge Figure6. Drain-Source on Resistance Page 3 of 5 DN3018KW Figure7. Safe Operation Area Figure8. Switching wave SOT-323 Package information SOT-323 Suggested Pad Layout www.doeshare.net Page 4 of 5 DN3018KW Important Notice and Disclaimer DOESHARE has used reasonable care in preparing the information included in this document, but DOESHARE does not warrant that such information is error free. DOESHARE assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. DOESHARE no warranty, representation or guarantee regarding the documents, circuits and products specification, DOESHARE reservation rights to make changes for any documents, products, circuits and specifications at any time without notice. Purchasers are solely responsible for the choice, selection and use of the DOESHARE products and services described herein, and DOESHARE assumes no liability whatsoever relating to the choice, selection or use of the products and services described herein. No license, express or implied, by implication or otherwise under any intellectual property rights of DOESHARE. Resale of DOESHARE products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by DOESHARE for the DOESHARE product or service described herein and shall not create or extend in any manner whatsoever, any liability of DOESHARE. www.doeshare.net Page 5 of 5