2SC2073T1TL
Silicon NPN Power Transistor
DESCRIPTION
·Collector-Emitter Breakdown Voltage:V(BR)CEO= 150V(Min)
·Wide Area of Safe Operation
·Complement to Type 2SA940
APPLICATIONS
·Power amplifier applications.
·Vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
150
V
VCEO
Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
1.5
A
IB
Base Current-Continuous
0.5
A
Collector Power Dissipation
@ Ta=25℃
1.5
Collector Power Dissipation
@ TC=25℃
25
Junction Temperature
150
℃
-55~150
℃
PC
TJ
Tstg
Storage Temperature Range
W
Ordering Information
Product
2SC2073T1TL
V01
Package
TO-220C
Packaging
Tube
1
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2SC2073T1TL
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
CONDITIONS
MIN
TYP.
MAX
UNIT
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 500mA; IB= 50mA
1.5
V
VBE(on)
Base-Emitter On Voltage
IC= 500mA ; VCE= 10V
0.85
V
ICBO
Collector Cutoff Current
VCB= 120V ; IE= 0
10
μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
10
μA
hFE
DC Current Gain
IC= 500mA ; VCE= 10V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
35
pF
Current-Gain—Bandwidth Product
IC= 500mA; VCE= 10V
4
MHz
fT
V01
PARAMETER
2
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