BU406T1TL

BU406T1TL Silicon NPN Power Transistor DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Low Saturation Voltage: VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS ·Designed for use in horizontal deflection output stages of TV’s and CRT’s ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEV Collector-Emitter Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICP Collector Current-Peak Repetitive 10 A ICP Collector Current- Peak (10ms) 15 A IB Base Current 4 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ -65~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case Rth j-a Thermal Resistance, Junction to Ambient MAX UNIT 2.08 ℃/W 70 ℃/W Ordering Information Product BU406T1TL V01 Package TO-220 Packaging Tube 1 www.sourcechips.com BU406T1TL ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A 1.2 V IEBO Emitter Cutoff Current VEB= 6V; IC=0 1.0 mA hFE DC Current Gain IC= 2A; VCE= 5V 40 Current-Gain—Bandwidth Product IC= 0.5A ; VCE= 10V, ftest= 20MHz 10 Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz Fall Time IC= 5A; IB1= -IB2= 0.5A, L= 150μH VCC= 40V fT COB tf V01 CONDITIONS 2 www.sourcechips.com MIN TYP. MAX 200 UNIT V 120 MHz 80 pF 0.75 μs