TPA80R300C

TPP80R300C, TPA80R300C, TPV80R300C, TPC80R300C, TPB80R300C Wuxi Unigroup Microelectronics Company 800V Super-Junction Power MOSFET FEATURES  Very low FOM RDS(on)×Qg  100% avalanche tested  RoHS compliant APPLICATIONS  Switch Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC) Device Marking and Package Information Device TPP80R300C TPA80R300C TPV80R300C TPC80R300C TPB80R300C Package TO-220 TO-220F TO-3PN TO-262 TO-263 Marking 80R300C 80R300C 80R300C 80R300C 80R300C Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Value Parameter Symbol Drain-Source Voltage (VGS = 0V) 800 V ID 15 A IDM 45 A VGSS ±30 V (note1) Gate-Source Voltage Unit TO-220F VDSS Continuous Drain Current Pulsed Drain Current TO-220, TO-3PN TO-262,TO-263 Single Pulse Avalanche Energy (note2) EAS 480 mJ Avalanche Current (note1) IAR 4 A Repetitive Avalanche Energy (note1) EAR 0.75 mJ Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range PD 151 TJ, Tstg 34 -55~+150 W ºC Thermal Resistance Value Parameter Symbol Unit TO-220, TO-3PN TO-262,TO-263 TO-220F Thermal Resistance, Junction-to-Case RthJC 0.83 3.7 Thermal Resistance, Junction-to-Ambient RthJA 62 80 ºC/W V1.0 1 www.tsinghuaicwx.com TPP80R300C, TPA80R300C, TPV80R300C, TPC80R300C, TPB80R300C Wuxi Unigroup Microelectronics Company Specifications TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. VGS = 0V, ID = 250µA 800 -- -- VDS = 800V, VGS = 0V, TJ = 25ºC -- -- 1 VDS = 800V, VGS = 0V, TJ = 150ºC -- -- 100 IGSS VGS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.5 -- 4.5 V Drain-Source On-Resistance (Note3) RDS(on) VGS = 10V, ID = 7.5A -- 0.26 0.3 Ω gfs VDS = 10V, ID = 7.5A -- 18.8 -- S -- 2330 -- -- 116 -- Static Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Forward Transconductance (Note3) V μA Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -- 7 -- Total Gate Charge Qg -- 46 -- Gate-Source Charge Qgs -- 11 -- Gate-Drain Charge Qgd -- 13 -- Turn-on Delay Time td(on) -- 43 -- Turn-on Rise Time tr -- 14 -- Turn-off Delay Time td(off) -- 150 -- -- 7 -- -- -- 15 -- -- 45 -- 0.9 1.2 V -- 460 -- ns -- 3.8 -- μC -- 35 -- A Turn-off Fall Time VGS = 0V,VDS = 50V, f = 1.0MHz VDD = 640V, ID = 15A, VGS = 10V VDD = 400V, ID = 15A, RG = 25Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC Pulsed Diode Forward Current ISM Body Diode Voltage VSD Reverse Recovery Time TJ = 25ºC, ISD = 15A, VGS = 0V trr Reverse Recovery Charge Qrr Peak Reverse Recovery Current Irrm VR = 400V, IF = IS, diF/dt = 100A/μs A Notes 1. Repetitive Rating: Pulse Width limited by maximum junction temperature 2. IAS = 4A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1% V1.0 2 www.tsinghuaicwx.com TPP80R300C, TPA80R300C, TPV80R300C, TPC80R300C, TPB80R300C Wuxi Unigroup Microelectronics Company Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics Figure 2. Transfer Characteristics 35 20V 10V 8V 7V 6V 5V 50 40 30 ID, Drain Current (A) ID, Drain Current (A) 60 20 10 VDS = 10V 30 TJ = 25ºC 25 20 TJ = 150ºC 15 10 5 0 0 0 5 10 15 20 0 VDS, Drain-to-Source Voltage (V) 2 10 Figure 4. Capacitance VGS = 10V TJ = 25ºC 0.34 0.32 Capacitance (pF) RDS(on), On-Resistance (Ω) 8 105 0.36 0.3 0.28 0.26 0.24 104 Ciss 103 Coss 102 Crss 101 VGS = 0 f = 1MHz 0.22 100 0.2 0 10 20 30 0 40 10 ID, Drain Current (A) 20 30 40 50 60 VDS, Drain-to-Source Voltage (V) Figure 5. Gate Charge Figure 6. Body Diode Forward Voltage 12 102 Is, Source Current (A) VGS, Gate-to-Source Voltage (V) 6 VGS, Gate-to-Source Voltage (V) Figure 3. On-Resistance vs. Drain Current 10 VDD = 120V 8 6 VDD = 640V 4 2 TJ = 150ºC 101 TJ = 25ºC 100 10-1 10-2 10-3 0 0 10 20 30 40 0.2 50 Qg, Total Gate Charge (nC) V1.0 4 0.4 0.6 0.8 1 1.2 1.4 VSD, Source-to-Drain Voltage (V) 3 www.tsinghuaicwx.com TPP80R300C, TPA80R300C, TPV80R300C, TPC80R300C, TPB80R300C Wuxi Unigroup Microelectronics Company Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 7. On-Resistance vs. Junction Temperature 0.6 ID = 250µA 0.4 VGS = 10V ID = 7.5A VGS(th), (Variance) RDS(on), (Normalized) 3 2.5 Figure 8. Threshold Voltage vs. Junction Temperature 2 1.5 1 0.5 0.2 0 -0.2 -0.4 -0.6 -0.8 -1 0 -100 -50 0 50 100 150 -1.2 -100 200 TJ, Junction Temperature (ºC) ZthJC, Thermal Impedance (K/W) ZthJC, Thermal Impedance (K/W) 10-1 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 10-4 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100 100 150 200 101 100 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 10-1 10-2 10-3 10-6 Tp, Pulse Width (s) V1.0 50 Figure 10. Transient Thermal Impedance TO-220F 100 10-3 0 TJ, Junction Temperature (ºC) Figure 9. Transient Thermal Impedance TO-220,TO-262,TO-263,TO-3PN 10-2 -50 10-5 10-4 10-3 10-2 10-1 100 101 Tp, Pulse Width (s) 4 www.tsinghuaicwx.com TPP80R300C, TPA80R300C, TPV80R300C, TPC80R300C, TPB80R300C Wuxi Unigroup Microelectronics Company Figure A：Gate Charge Test Circuit and Waveform Figure B：Resistive Switching Test Circuit and Waveform Figure C：Unclamped Inductive Switching Test Circuit and Waveform V1.0 5 www.tsinghuaicwx.com TPP80R300C, TPA80R300C, TPV80R300C, TPC80R300C, TPB80R300C Wuxi Unigroup Microelectronics Company TO-220 V1.0 6 www.tsinghuaicwx.com TPP80R300C, TPA80R300C, TPV80R300C, TPC80R300C, TPB80R300C Wuxi Unigroup Microelectronics Company TO-220F V1.0 7 www.tsinghuaicwx.com TPP80R300C, TPA80R300C, TPV80R300C, TPC80R300C, TPB80R300C Wuxi Unigroup Microelectronics Company TO-3PN V1.0 8 www.tsinghuaicwx.com TPP80R300C, TPA80R300C, TPV80R300C, TPC80R300C, TPB80R300C Wuxi Unigroup Microelectronics Company TO-262 V1.0 9 www.tsinghuaicwx.com TPP80R300C, TPA80R300C, TPV80R300C, TPC80R300C, TPB80R300C Wuxi Unigroup Microelectronics Company TO-263 V1.0 10 www.tsinghuaicwx.com TPP80R300C, TPA80R300C, TPV80R300C, TPC80R300C, TPB80R300C Wuxi Unigroup Microelectronics Company Disclaimer All product specifications and data are subject to change without notice. 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