TPA70R450C

TPP70R450C, TPA70R450C, TPU70R450C, TPD70R450C, TPC70R450C, TPB70R450C Wuxi Unigroup Microelectronics Company 700V Super-Junction Power MOSFET FEATURES  Very low FOM RDS(on)×Qg  100% avalanche tested  RoHS compliant APPLICATIONS  Switch Mode Power Supply (SMPS)  Uninterruptible Power Supply (UPS)  Power Factor Correction (PFC) Device Marking and Package Information Device TPP70R450C TPA70R450C TPU70R450C TPD70R450C TPC70R450C TPB70R450C Package TO-220 TO-220F TO-251 TO-252 TO-262 TO-263 Marking 70R450C 70R450C 70R450C 70R450C 70R450C 70R450C Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Value Parameter Symbol Drain-Source Voltage (VGS = 0V) 700 V ID 11 A IDM 33 A VGSS ±30 V (note1) Gate-Source Voltage Unit TO-220F VDSS Continuous Drain Current Pulsed Drain Current TO-220, TO-251, TO-252 TO-262, TO-263 Single Pulse Avalanche Energy (note2) EAS 211 mJ Avalanche Current (note1) IAR 1.6 A Repetitive Avalanche Energy (note1) EAR 0.32 mJ Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range PD 78 TJ, Tstg 31.3 -55~+150 W ºC Thermal Resistance Value Parameter Symbol Unit TO-220, TO-251, TO-252 TO-262, TO-263 TO-220F Thermal Resistance, Junction-to-Case RthJC 1.6 4 Thermal Resistance, Junction-to-Ambient RthJA 62 80 ºC/W V3.0 1 www.tsinghuaicwx.com TPP70R450C, TPA70R450C, TPU70R450C, TPD70R450C, TPC70R450C, TPB70R450C Wuxi Unigroup Microelectronics Company Specifications TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. VGS = 0V, ID = 250µA 700 -- -- VDS = 700V, VGS = 0V, TJ = 25ºC -- -- 1 VDS = 700V, VGS = 0V, TJ = 150ºC -- -- 100 IGSS VGS = ±30V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2.5 -- 4.0 V Drain-Source On-Resistance (Note3) RDS(on) VGS = 10V, ID = 5.5A -- 0.49 0.55 Ω gfs VDS = 10V, ID = 5.5A -- 7.8 -- S -- 901 -- -- 50 -- Static Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Forward Transconductance (Note3) V μA Dynamic Input Capacitance Ciss VGS = 0V, VDS = 50V, f = 1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss -- 5.5 -- Total Gate Charge Qg -- 21 -- Gate-Source Charge Qgs -- 4.7 -- Gate-Drain Charge Qgd -- 7.3 -- Turn-on Delay Time td(on) -- 41 -- Turn-on Rise Time tr -- 20 -- Turn-off Delay Time td(off) -- 123 -- -- 6.4 -- -- -- 9.2 -- -- 29 -- 0.9 1.2 V -- 280 -- ns -- 2.8 -- μC -- 17 -- A Turn-off Fall Time VDD = 560V, ID = 11A, VGS = 10V VDD = 400V, ID = 11A, RG = 25Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC Pulsed Diode Forward Current ISM Body Diode Voltage VSD Reverse Recovery Time TJ = 25ºC, ISD = 11A, VGS = 0V trr Reverse Recovery Charge Qrr Peak Reverse Recovery Current Irrm VR = 560V, IF = IS, diF/dt = 100A/μs A Notes 1. Repetitive Rating: Pulse Width limited by maximum junction temperature 2. IAS = 1.6A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1% V3.0 2 www.tsinghuaicwx.com TPP70R450C, TPA70R450C, TPU70R450C, TPD70R450C, TPC70R450C, TPB70R450C Wuxi Unigroup Microelectronics Company Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics Figure 2. Transfer Characteristics 25 VDS = 10V 20V 10V 8V 7V 6V 5V 25 20 ID, Drain Current (A) ID, Drain Current (A) 30 15 10 TJ = 25ºC 20 15 TJ = 150ºC 10 5 5 0 0 0 2 4 6 8 10 12 14 16 0 2 VDS, Drain-to-Source Voltage (V) Figure 3. On-Resistance vs. Drain Current 10 Figure 4. Capacitance VGS = 10V TJ = 25ºC 0.65 Capacitance (pF) RDS(on), On-Resistance (Ω) 8 104 0.6 0.55 0.5 Ciss 103 102 Coss 101 Crss 0.45 VGS = 0 f = 1MHz 100 0.4 0 5 10 15 20 0 ID, Drain Current (A) 10 20 30 40 50 60 VDS, Drain-to-Source Voltage (V) Figure 5. Gate Charge Figure 6. Body Diode Forward Voltage 102 12 Is, Source Current (A) VGS, Gate-to-Source Voltage (V) 6 VGS, Gate-to-Source Voltage (V) 0.7 10 VDD = 120V 8 VDD = 560V 6 4 TJ = 150ºC 101 TJ = 25ºC 100 10-1 10-2 2 0 0 5 10 15 20 10-3 25 0.2 Qg, Total Gate Charge (nC) V3.0 4 0.4 0.6 0.8 1 1.2 1.4 VSD, Source-to-Drain Voltage (V) 3 www.tsinghuaicwx.com TPP70R450C, TPA70R450C, TPU70R450C, TPD70R450C, TPC70R450C, TPB70R450C Wuxi Unigroup Microelectronics Company Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 7. On-Resistance vs. Junction Temperature Figure 8. Threshold Voltage vs. Junction Temperature 0.6 VGS = 10V ID = 5.5A 2.5 ID = 250µA 0.4 VGS(th), (Variance)we RDS(on), (Normalized) 3 2 1.5 1 0.2 0 -0.2 -0.4 -0.6 -0.8 0.5 -1 0 -100 -50 0 50 100 150 -1.2 -100 200 101 100 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 10-2 10-3 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100 150 200 101 100 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 10-1 10-2 10-3 10-6 Tp, Pulse Width (s) V3.0 50 Figure 10. Transient Thermal Impedance TO-220F Figure 9. Transient Thermal Impedance TO-220,TO-251,TO-252, TO-262,TO-263 10-1 0 TJ, Junction Temperature (ºC) ZthJC, Thermal Impedance (K/W) ZthJC, Thermal Impedance (K/W) TJ, Junction Temperature (ºC) -50 10-5 10-4 10-3 10-2 10-1 100 101 Tp, Pulse Width (s) 4 www.tsinghuaicwx.com TPP70R450C, TPA70R450C, TPU70R450C, TPD70R450C, TPC70R450C, TPB70R450C Wuxi Unigroup Microelectronics Company Figure A：Gate Charge Test Circuit and Waveform Figure B：Resistive Switching Test Circuit and Waveform Figure C：Unclamped Inductive Switching Test Circuit and Waveform V3.0 5 www.tsinghuaicwx.com TPP70R450C, TPA70R450C, TPU70R450C, TPD70R450C, TPC70R450C, TPB70R450C Wuxi Unigroup Microelectronics Company TO-220 V3.0 6 www.tsinghuaicwx.com TPP70R450C, TPA70R450C, TPU70R450C, TPD70R450C, TPC70R450C, TPB70R450C Wuxi Unigroup Microelectronics Company TO-220F V3.0 7 www.tsinghuaicwx.com TPP70R450C, TPA70R450C, TPU70R450C, TPD70R450C, TPC70R450C, TPB70R450C Wuxi Unigroup Microelectronics Company TO-251 V3.0 8 www.tsinghuaicwx.com TPP70R450C, TPA70R450C, TPU70R450C, TPD70R450C, TPC70R450C, TPB70R450C Wuxi Unigroup Microelectronics Company TO-252 V3.0 9 www.tsinghuaicwx.com TPP70R450C, TPA70R450C, TPU70R450C, TPD70R450C, TPC70R450C, TPB70R450C Wuxi Unigroup Microelectronics Company TO-262 V3.0 10 www.tsinghuaicwx.com TPP70R450C, TPA70R450C, TPU70R450C, TPD70R450C, TPC70R450C, TPB70R450C Wuxi Unigroup Microelectronics Company TO-263 V3.0 11 www.tsinghuaicwx.com TPP70R450C, TPA70R450C, TPU70R450C, TPD70R450C, TPC70R450C, TPB70R450C Wuxi Unigroup Microelectronics Company Disclaimer All product specifications and data are subject to change without notice. For documents and material available from this datasheet, Wuxi Unigroup does not warrant or assume any legal liability or responsibility for the accuracy, completeness of any product or technology disclosed hereunder. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document or by any conduct of Wuxi Unigroup. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling Wuxi Unigroup products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Wuxi Unigroup for any damages arising or resulting from such use or sale. Wuxi Unigroup disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Wuxi Unigroup’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. Wuxi Unigroup Microelectronics CO., LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all Wuxi Unigroup products (including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. Information (including circuit diagrams and circuit parameters) herein is for example only. It is not guaranteed for volume production. Wuxi Unigroup believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. V3.0 12 www.tsinghuaicwx.com