SM420R65CT2TL

SM420R50C 30V /36A Single N Power MOSFET N-Channel Super Junction Power MOSFET Description SM420R65C is power MOSFET using advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of low EMI to designers as well as low ID 11A VDSS 650V Rdson(Max) 0.42Ω(VGS=10V, ID=5.5A) Qg 39nC switching loss. General Features ● 11A,650V, Rdson(Max)= 0.42ohm@VGS=10V ● Low Gate charge ● Low Crss ● Fast Switching ● Improved dv/dt Capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply TO-220 TO-252 V01 1 www.sourcechips.com TO-220F 30V /36A Single N Power MOSFET SM420R50C Order Information Order Information Marking ID Package Packing Type Supplied As SM420R65CT9RL 420R65C TO252-2L 3000 Units on Reel SM420R65CT2TL 420R65C TO220F-3L 1000 units on Box 5000 units on Carton SM420R65CT1TL 420R65C TO220-3L 、 1000 units on Box、5000 units on Carton Absolute Maximum Ratings Ta=25 ºC unless otherwise noted Parameter Symbol Value Unit Drain-source Voltage VDS 650 V Gate-source Voltage VGS ±30 V Continuous Drain Current(Ta=25 ) ID 11 A Drain Current-Pulsed IDM 45 A ℃ TO252 Total Dissipation (Ta=25 ) ℃ 80 TO220 PD 68 TO220F W 31 Junction Temperature TJ 150 ºC Storage Temperature TSTG -65 to 150 ºC Single Pulse Avalanche Energy EAS 205 mJ ESD HBM(Human Body Mode) ≥2000 V ESD MM(Machine Mode) ≥200 V Electrical Characteristics Ta = 25ºC PARAMETER Drain-source Breakdown Voltage Symbol Test Condition MIN BVDSS VGS=0V, ID=250μA 650 VGS(TH) VGS=VDS ,ID=250μA 2.0 Drain-source Leakage Current IDSS Drain-Source Diode Forward Voltage VSD VGS=0V IS=11A Gate-body Leakage Current (VDS = 0) IGSS VGS=±30V Forward Transconductance GFS VDS=10V ID=11A Static Drain-source On Resistance RDS(ON) VGS=10V,ID=5.5A Gate Threshold Voltage Typ MAX UNIT V 4.0 V VDS=650V,VGS=0V 1 uA ， 1.5 V ±100 nA 3 S 0.42 Ω Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant in temperature etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings 2 V01 www.sourcechips.com SM420R50C 30V /36A Single N Power MOSFET Thermal Characteristics Ta=25℃ PARAMETER Symbol TYP MAX UNIT 2.5 ºC/W 3.1 ºC/W 63 ºC/W 80 ºC/W TO252 Maximum Junction-to-case RQJC TO220F,TO220 TO252 Maximum Junction-to-Ambient RQJA TO220F,TO220 Note1: Ensure that the channel temperature does not exceed 150ºC Note2: VDD=50V,Tch=25 ºC(initial),IAS=11A Rg=25Ω Note3: This transistor is sensitive to electrostatic and should be handled with care ， Dynamic Characteristics Ta = 25 ºC PARAMETER Symbol Input Capacitance Ciss output Capacitance Coss Reverse Transfer Capacitance Test Condition MIN VDS=25V,VGS=0V, f=1.0MHZ Crss TYP MAX UNIT 680 pF 240 pF 7 pF Switching Characteristics Ta=25 ºC PARAMETER Symbol Turn-On Delay Time Td(on) Test Condition MIN TYP MAX UNIT 15 nS 10 nS 110 nS Turn-On Rise Time Tr Turn-Off Delay Time Td(off) Turn-Off Rise Time Tf 9 nS Total Gate Charge Qg 39 nC Gate-Source Charge Qgs 4 nC Gate-Drain Charge Qgd 20 nC VDS=300V,ID=11A, VGS=10V ,RG=25Ω VDS=480V ，I =11A, V D =10V GS Drain-Source Diode Maximum Ratings and Characteristics Ta=25 ºC PARAMETER Symbol Max. Diode Forward Current Is Test Condition TYP MAX UNIT 11 A Pulsed Source Current Ism Integral Reverse P-N Junction Diode in the MOSFET Diode Forward Voltage VSD VGS=0V,IS=11A 0 Trr VGS=0V,IS=11A, dIF/dt=100A/μs 280 nS 3 μC Reverse Recovery Time Reverse Recovery Charge Qrr 3 V01 MIN www.sourcechips.com 45 1.5 V 30V /36A Single N Power MOSFET Test Circuit Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform Unclamped Inductive Switching Test Circuit & Waveform 4 V01 www.sourcechips.com SM420R50C 30V /36A Single N Power MOSFET SM420R50C Typical Characteristics Curve Figure 1: Output Characteristics Figure 2: Transfer Characteristics Figure 3: On Resistance Vs Drain Current Operating Area 5 V01 www.sourcechips.com Figure 4: Safe 30V /36A Single N Power MOSFET Figure5: On Resistance Vs Junction Temperature Characteristics SM420R50C Figure6: Capacitance Typical Characteristics Curve Figure7: Gate Charge Waveform Diode Forward Voltage Figure8: Source-Drain Figure9: Breakdown Voltage Vs Junction Temperature Note: The above characteristics curves are presented for reference only and not guaranteed by production test unless otherwise noted 6 V01 www.sourcechips.com 30V /36A Single N Power MOSFET Outline Information (TO252-2L) Outline Information (TO220-3L) 7 V01 www.sourcechips.com SM420R50C 30V /36A Single N Power MOSFET Outline Information (TO220F-3L) 8 V01 www.sourcechips.com SM420R50C