SMIRF8N60T1TL

30V /36A Single N Power MOSFET SMIRF8N60 N-Channel Enhancement Mode Power MOSFET Description SMIRF8N60 is an N-channel enhancement mode power MOS field effect transistor. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in ID 8A VDSS 600V Rdson(max) 1.2Ω(VGS=10V, ID=4A) Qg 20nC the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. General Features ● 8A,600V,RDS(on)(typ.)= 0.9ohm@VGS=10V ● Low Gate charge ● Low Crss ● Fast Switching ● Improved dv/dt Capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible power supply TO-220 1 V01 www.sourcechips.com TO-220F 30V /36A Single N Power MOSFET SMIRF8N60 Order Information Order Information Marking ID Package SMIRF8N60T2TL IRF8N60 TO220F-3L SMIRF8N60T1TL IRF8N60 TO220-3L Packing Type Supplied As 、 1000 units on Box、5000 units on Carton 1000 units on Box 5000 units on Carton Absolute Maximum Ratings Ta=25 ºC unless otherwise noted Parameter Symbol Value Unit Drain-source Voltage VDS 600 V Gate-source Voltage VGS ±30 V Continuous Drain Current(Ta=25 ) ID 8 A Drain Current-Pulsed IDM 32 A Total Dissipation(Ta=25 ) ℃ ℃ TO220 152 PD W TO220F 48 Junction Temperature TJ 150 ºC Storage Temperature TSTG -65 to 150 ºC Single Pulse Avalanche Energy EAS 550 mJ ESD HBM(Human Body Mode) ≥2000 V ESD MM(Machine Mode) ≥200 V Electrical Characteristics Ta = 25ºC PARAMETER Drain-source Breakdown Voltage Symbol Test Condition MIN BVDSS VGS=0V, ID=250μA 500 VGS(TH) VGS=VDS ,ID=250μA 2.0 Drain-source Leakage Current IDSS Drain-Source Diode Forward Voltage VSD VGS=0V IS=8A Gate-body Leakage Current (VDS = 0) IGSS VGS=±30V Static Drain-source On Resistance RDS(ON) Gate Threshold Voltage Typ MAX UNIT V 4.0 V VDS=600V,VGS=0V 1 uA ， 1.4 V ±100 nA 1.2 Ω VGS=10V,ID=4A 3.0 0.9 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant in temperature etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings V01 2 www.sourcechips.com SMIRF8N60 30V /36A Single N Power MOSFET Thermal Characteristics Ta=25℃ PARAMETER Symbol TYP MAX UNIT Maximum Junction-to-case TO220F,TO220 RQJC 2.5 ºC/W Maximum Junction-to-Ambient TO220F,TO220 RQJA 62.5 ºC/W Note1: Ensure that the channel temperature does not exceed 150ºC ， Note2: VDD=50V,Tch=25 ºC(initial),IAS=8A Rg=25Ω Note3: This transistor is sensitive to electrostatic and should be handled with care Dynamic Characteristics Ta = 25 ºC PARAMETER Symbol Input Capacitance Ciss output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Test Condition MIN VDS=25V,VGS=0V, f=1.0MHZ VDS=0V,VGS=0V,f=1.0MHz TYP MAX UNIT 1160 pF 110 pF 8 pF 2 Ω Switching Characteristics Ta=25 ºC PARAMETER Symbol Turn-On Delay Time Td(on) Turn-On Rise Time Tr Turn-Off Delay Time Td(off) Turn-Off Rise Time Test Condition MIN TYP MAX UNIT 20 nS 27 nS 60 nS Tf 30 nS Total Gate Charge Qg 20 nC Gate-Source Charge Qgs 6 nC Gate-Drain Charge Qgd 5.5 nC VDS=300V,ID=8A, VGS=10V ,RG=25Ω VDS=520V ，I =8A,V D =10V GS Drain-Source Diode Maximum Ratings and Characteristics Ta=25 ºC PARAMETER Symbol Max. Diode Forward Current Is Test Condition TYP MAX UNIT 8 A 32 A 1.5 V Pulsed Source Current Ism Integral Reverse P-N Junction Diode in the MOSFET Diode Forward Voltage VSD VGS=0V,IS=8A 0.85 VGS=0V,IS=8A, dIF/dt=100A/μs 320 nS 2.5 μC Reverse Recovery Time Reverse Recovery Charge trr Qrr 3 V01 MIN www.sourcechips.com 30V /36A Single N Power MOSFET Test Circuit Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveform Unclamped Inductive Switching Test Circuit & Waveform 4 V01 www.sourcechips.com SMIRF8N60 30V /36A Single N Power MOSFET SMIRF8N60 Typical Characteristics Curve Figure 1: Output Characteristics Transfer Characteristics Figure 2: Figure 3: On Resistance Vs Drain Current Gate Source Voltage Figure5: On Resistance Vs Junction Temperature 5 V01 www.sourcechips.com Figure 4: On Resistance Vs Figure6: Capacitance 30V /36A Single N Power MOSFET SMIRF8N60 Characteristics Typical Characteristics Curve Figure7: Gate Charge Waveform Forward Voltage Figure8: Source-Drain Diode Figure9: Breakdown Voltage Vs Junction Temperature Note: The above characteristics curves are presented for reference only and not guaranteed by production test unless otherwise noted 6 V01 www.sourcechips.com 30V /36A Single N Power MOSFET Outline Information (TO220F-3L) Outline Information (TO220-3L) 7 V01 www.sourcechips.com SMIRF8N60 30V /36A Single N Power MOSFET 8 V01 www.sourcechips.com SMIRF8N60