TTP120N04AT

TTD120N04AT, TTP120N04AT Wuxi Unigroup Microelectronics Company 40V N-Channel Trench MOSFET FEATURES  Trench Power MOSFET Technology  Low RDS(ON)  Low Gate Charge  Optimized For Fast-switching Applications APPLICATIONS  Synchronous Rectification in DC/DC and AC/DC Converters  Isolated DC/DC Converters in Telecom and Industrial Device Marking and Package Information Device Package Marking TTD120N04AT TO-252 120N04AT TTP120N04AT TO-220 120N04AT Absolute Maximum Ratings TC = 25ºC, unless otherwise noted Parameter Symbol Value Unit VDSS 40 V ID 120 A IDM 480 A VGSS ±20 V EAS 138.4 mJ Avalanche Current IAs 35 A Power Dissipation (TC = 25ºC) PD 143 W TJ, Tstg -55~+175 ºC Symbol Value Unit Thermal Resistance, Junction-to-Case RthJC 1.05 Thermal Resistance, Junction-to-Ambient RthJA 60 Drain-Source Voltage (VGS = 0V) Continuous Drain Current Pulsed Drain Current (note1) Gate-Source Voltage Single Pulse Avalanche Energy (note2) Operating Junction and Storage Temperature Range Thermal Resistance Parameter K/W V1.1 1 www.tsinghuaicwx.com TTD120N04AT, TTP120N04AT Wuxi Unigroup Microelectronics Company Specifications TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. VGS = 0V, ID = 250µA 40 -- -- VDS = 40V, VGS = 0V, TJ = 25ºC -- -- 1 VDS = 40V, VGS = 0V, TJ = 150ºC -- -- 100 IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1.0 1.7 2.4 V VGS = 10V, ID = 30A -- 2.7 3.5 mΩ Drain-Source On-Resistance (Note3) RDS(on) VGS = 4.5V, ID = 30A -- 3.6 4.7 mΩ VDS = 10V, ID =20A -- 45.5 -- S -- 10179 -- -- 587 -- Static Drain-Source Breakdown Voltage V(BR)DSS Zero Gate Voltage Drain Current IDSS Gate-Source Leakage Forward Transconductance (Note3) gfs V μA Dynamic Input Capacitance Ciss VGS = 0V, VDS = 20V, f = 1.0MHz Output Capacitance Coss Reverse Transfer Capacitance Crss -- 439 -- Total Gate Charge Qg -- 132 -- Gate-Source Charge Qgs -- 23 -- Gate-Drain Charge Qgd -- 23 -- Turn-on Delay Time td(on) -- 27 -- Turn-on Rise Time tr -- 11 -- Turn-off Delay Time td(off) -- 83 -- -- 14 -- -- -- 120 -- -- 480 Turn-off Fall Time VDD = 20V, ID = 20A, VGS = 10V VDD = 20V, ID = 20A, RG = 3Ω tf pF nC ns Drain-Source Body Diode Characteristics Continuous Body Diode Current IS TC = 25ºC A Pulsed Diode Forward Current ISM Body Diode Voltage VSD TJ = 25ºC, ISD = 20A, VGS = 0V -- -- 1.2 V Reverse Recovery Time trr -- 66 -- ns Reverse Recovery Charge Qrr IF = 20A, diF/dt = 100A/μs -- 73 -- nC Notes 1. Repetitive Rating: Pulse Width limited by maximum junction temperature 2. VDD = 40V, RG = 25Ω, Starting TJ = 25°C 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 1% V1.1 2 www.tsinghuaicwx.com TTD120N04AT, TTP120N04AT Wuxi Unigroup Microelectronics Company Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 1. Output Characteristics Figure 2. Transfer Characteristics 180 10V 6V 4V 150 120 VDS = 5V ID, Drain Current (A) ID, Drain Current (A) 180 3.5V 3V 90 60 150 120 90 TJ = 125ºC 60 30 30 TJ = 25ºC 0 0 0 1 2 3 4 VDS, Drain-to-Source Voltage (V) 0 5 1 Figure 3. On-Resistance vs. Drain Current 3 4 5 Figure 4. Capacitance 5 105 TJ = 25ºC 4 Capacitance (pF) RDS(on), On-Resistance (mΩ) 2 VGS, Gate-to-Source Voltage (V) VGS = 4.5V 3 VGS = 10V Ciss 104 103 Coss 2 VGS = 0 f = 1MHz 102 Crss 1 0 5 10 15 20 25 30 0 ID, Drain Current (A) Figure 5. Gate Charge 20 30 40 Figure 6. Body Diode Forward Voltage 12 102 Is, Source Current (A) VGS, Gate-to-Source Voltage (V) 10 VDS, Drain-to-Source Voltage (V) 10 VDD = 20V 8 6 4 TJ = 125ºC 101 100 10-1 TJ = 25ºC 10-2 10-3 10-4 2 10-5 0 0 30 60 90 120 0 150 Qg, Total Gate Charge (nC) V1.1 0.2 0.4 0.6 0.8 1 VSD, Source-to-Drain Voltage (V) 3 www.tsinghuaicwx.com TTD120N04AT, TTP120N04AT Wuxi Unigroup Microelectronics Company Typical Characteristics TJ = 25ºC, unless otherwise noted Figure 7. On-Resistance vs. Junction Temperature Figure 8. Threshold Voltage vs. Junction Temperature 2 1 0.6 VGS(th), (Variance) RDS(on), (Normalized) VGS = 10V ID = 20A 1.5 1 ID = 250µA 0.2 -0.2 -0.6 0.5 -50 -25 0 25 50 75 100 125 -1 150 -50 TJ, Junction Temperature (ºC) -25 0 25 50 75 100 125 150 TJ, Junction Temperature (ºC) Figure 9. Transient Thermal Impedance ZthJC, Thermal Impedance (Normalized) 101 100 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 10-1 10-2 10-3 10-6 10-5 10-4 10-3 10-2 10-1 Tp, Pulse Width (s) V1.1 4 www.tsinghuaicwx.com TTD120N04AT, TTP120N04AT Wuxi Unigroup Microelectronics Company Figure A：Gate Charge Test Circuit and Waveform Figure B：Resistive Switching Test Circuit and Waveform Figure C：Unclamped Inductive Switching Test Circuit and Waveform V1.1 5 www.tsinghuaicwx.com TTD120N04AT, TTP120N04AT Wuxi Unigroup Microelectronics Company TO-252 V1.1 6 www.tsinghuaicwx.com TTD120N04AT, TTP120N04AT Wuxi Unigroup Microelectronics Company TO-220 V1.1 7 www.tsinghuaicwx.com TTD120N04AT, TTP120N04AT Wuxi Unigroup Microelectronics Company Disclaimer All product specifications and data are subject to change without notice. For documents and material available from this datasheet, Wuxi Unigroup does not warrant or assume any legal liability or responsibility for the accuracy, completeness of any product or technology disclosed hereunder. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document or by any conduct of Wuxi Unigroup. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling Wuxi Unigroup products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Wuxi Unigroup for any damages arising or resulting from such use or sale. Wuxi Unigroup disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Wuxi Unigroup’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. Wuxi Unigroup Microelectronics CO., LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all Wuxi Unigroup products (including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. Information (including circuit diagrams and circuit parameters) herein is for example only. It is not guaranteed for volume production. Wuxi Unigroup believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. V1.1 8 www.tsinghuaicwx.com