LNC04R035B/ LND04R035B
Lonten N-channel 40V, 120A, 3.5mΩ Power MOSFET
Description
Product Summary
These N-Channel enhancement mode power field
VDSS
40V
effect
RDS(on).max@ VGS=10V
3.5mΩ
ID
120A
transistors
are
using
trench
DMOS
technology. This advanced technology has been
especially tailored to minimize on-state resistance,
provide superior switching performance, and with
Pin Configuration
stand high energy pulse in the avalanche and
commutation mode. These devices are well suited
for high efficiency fast switching applications.
Features
40V,120A,RDS(on).max=3.5mΩ@VGS = 10V
Improved dv/dt capability
Fast switching
100% EAS Guaranteed
Green device available
D
TO-220
TO-220MF
G
S
Applications
Motor Drives
UPS
DC-DC Converter
Absolute Maximum Ratings
N-Channel MOSFET
Pb
TC = 25°C unless otherwise noted
Parameter
Drain-Source Voltage
Continuous drain current ( TC = 25°C )1)
Continuous drain current ( TC = 100°C )1)
Symbol
VDSS
ID
Value
Unit
40
V
120
A
82
A
Pulsed drain current2)
IDM
480
A
Gate-Source voltage
VGSS
±20
V
Avalanche energy3)
EAS
1040
mJ
150
W
48
W
Power Dissipation ( TC = 25°C ) TO-220
Power Dissipation ( TC = 25°C ) TO-220MF
PD
Storage Temperature Range
TSTG
-55 to +150
°C
Operating Junction Temperature Range
TJ
-55 to +150
°C
Value
Unit
0.83
°C/W
2.6
°C/W
62
°C/W
80
°C/W
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case TO-220
Thermal Resistance, Junction-to-Case TO-220MF
Thermal Resistance, Junction-to-Ambient TO-220
Thermal Resistance, Junction-to-Ambient TO-220MF
Version 1.4,Jan-2020
Symbol
RθJC
RθJA
1
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Package Marking and Ordering Information
LNC04R035B/ LND04R035B
Device
Device Package
Marking
LNC04R035B
TO-220
LNC04R035B
LND04R035B
TO-220MF
LND04R035B
Electrical Characteristics
Parameter
TJ = 25°C unless otherwise noted
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Static characteristics
Drain-source breakdown voltage
BVDSS
VGS=0 V, ID=250uA
40
---
---
V
Gate threshold voltage
VGS(th)
VDS=VGS, ID=250uA
1.3
---
2.5
V
Drain-source leakage current
IDSS
VDS=40 V, VGS=0 V, TJ = 25°C
---
---
1
μA
VDS=40 V, VGS=0 V, TJ = 125°C
---
---
5
μA
Gate leakage current, Forward
IGSSF
VGS=20 V, VDS=0 V
---
---
100
nA
Gate leakage current, Reverse
IGSSR
VGS=-20 V, VDS=0 V
---
---
-100
nA
Drain-source on-state resistance
RDS(on)
VGS=10 V, ID=20 A
---
2.7
3.5
mΩ
VGS=4.5 V, ID=10 A
---
3.8
6.0
mΩ
Forward transconductance
gfs
VDS =5 V , ID=50A
26
---
---
S
---
7810
---
---
677
---
---
370
---
---
15
---
---
17
---
---
52
---
---
23
---
---
2.12
---
---
36.4
---
---
37.3
---
---
139
---
Dynamic characteristics
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Gate resistance
Rg
VDS = 20 V, VGS = 0 V,
F = 1MHz
VDD = 20V,VGS=10V, ID =20 A
VGS=0V, VDS=0V, F=1MHz
pF
ns
Ω
Gate charge characteristics
Gate to source charge
Qgs
Gate to drain charge
Qgd
Gate charge total
Qg
VDS=20 V, ID=100A,
VGS= 10 V
nC
Drain-Source diode characteristics and Maximum Ratings
Continuous Source Current
IS
---
---
120
A
Pulsed Source Current4)
ISM
---
---
480
A
Diode Forward Voltage
VSD
VGS=0V, IS=50A, TJ=25℃
---
---
1.2
V
Reverse Recovery Time
trr
IS=100A, di/dt=100A/us,
---
42
---
ns
Reverse Recovery Charge
Qrr
TJ=25℃
---
120
---
nC
Notes:
1: The maximum junction current rating is package limited.
2: Repetitive Rating: Pulse width limited by maximum junction temperature.
3: VDD=20V, VGS=10V, L=1mH, IAS=45.6A, RG=25Ω, Starting TJ=25℃.
4: Pulse Test:Pulse Width ≤300μs, Duty Cycle≤2%.
Version 1.4,Jan-2020
2
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LNC04R035B/ LND04R035B
Electrical Characteristics Diagrams
Figure 1. Typ. Output Characteristics
Figure 2. Transfer Characteristics
Figure 3. Capacitance
Figure 4. Gate Charge Waveform
Characteristics
Figure 5. Body-Diode Characteristics
Version 1.4,Jan-2020
3
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LNC04R035B/ LND04R035B
Figure 6. Normalized Maximum Transient Thermal Impedance (RthJC)
Figure 7. Normalized Maximum Transient Thermal Impedance (RthJA)
Version 1.4,Jan-2020
4
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LNC04R035B/ LND04R035B
Test Circuit & Waveform
Figure 8. Gate Charge Test Circuit & Waveform
Figure 9. Resistive Switching Test Circuit & Waveforms
Figure 10. Unclamped Inductive Switching (UIS) Test Circuit & Waveform
Figure 11. Diode Recovery Circuit & Waveform
Version 1.4,Jan-2020
5
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LNC04R035B/ LND04R035B
Mechanical Dimensions for TO-220
COMMON DIMENSIONS
SYMBOL
MM
INCH
MIN
NOM
MAX
MIN
NOM
MAX
A
4.37
4.57
4.70
0.172
0.180
0.185
A1
1.25
1.30
1.40
0.049
0.051
0.055
A2
2.20
2.40
2.60
0.087
0.094
0.102
b
0.70
0.80
0.95
0.028
0.031
0.037
b2
1.17
1.27
1.47
0.046
0.050
0.058
c
0.45
0.50
0.60
0.018
0.020
0.024
D
15.10
15.60
16.10
0.594
0.614
0.634
D1
8.80
9.10
9.40
0.346
0.358
0.370
D2
5.50
-
-
0.217
-
-
E
9.70
10.00
10.30
0.382
0.394
0.406
E3
7.00
-
-
0.276
-
-
e
2.54BCS
0.1BSC
e1
5.08BCS
0.2REF
H1
6.25
6.50
6.85
0.246
0.256
0.270
L
12.75
13.50
13.80
0.502
0.531
0.543
L1
-
3.10
3.40
-
0.122
0.134
ØP
3.40
3.60
3.80
0.134
0.142
0.150
Q
2.60
2.80
3.00
0.102
0.110
0.118
TO-220 Part Marking Information
Lonten Logo
Lonten
LNC04R035B
ABYWW99
Part Number
“99”
Manufacturing code
“AB”
Foundry & Assembly code
“YWW”
Date Code
Version 1.4,Jan-2020
6
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LNC04R035B/ LND04R035B
Mechanical Dimensions for TO-220MF
COMMON DIMENSIONS
SYMBOL
MM
INCH
MIN
NOM
MAX
MIN
NOM
MAX
E
9.96
10.16
10.36
0.392
0.400
0.408
A
4.50
4.70
4.90
0.177
0.185
0.193
A1
2.34
2.54
2.74
0.092
0.100
0.108
A2
0.30
0.45
0.60
0.012
0.018
0.024
A4
2.56
2.76
2.96
0.101
0.109
0.117
c
0.40
0.50
0.65
0.016
0.020
0.026
c1
1.20
1.30
1.35
0.047
0.051
0.053
D
15.57
15.87
16.17
0.613
0.625
0.637
H1
6.70REF
0.264REF
e
2.54BSC
0.1BSC
L
12.68
12.98
13.28
0.499
0.511
0.523
L1
2.88
3.03
3.18
0.113
0.119
0.125
ØP
3.03
3.18
3.38
0.119
0.125
0.133
ØP3
3.15
3.45
3.65
0.124
0.136
0.144
F3
3.15
3.30
3.45
0.124
0.130
0.136
G3
1.25
1.35
1.55
0.049
0.053
0.061
b1
1.18
1.28
1.43
0.046
0.050
0.056
b2
0.70
0.80
0.95
0.028
0.031
0.037
TO-220MF Part Marking Information
Lonten Logo
“AB”
Foundry & Assembly code
Lonten
LND04R035B
ABYWW99
Part Number
“99”
Manufacturing code
“YWW”
Date Code
Version 1.4,Jan-2020
7
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LNC04R035B/ LND04R035B
Disclaimer
The content specified herein is for the purpose of introducing LONTEN's products (hereinafter "Products").
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into
account when designing circuits for mass production.
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rights of third parties by or arising from the use of the Products or technical information described in this
document.
The Products are not designed or manufactured to be used with any equipment, device or system which
requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to
human life or create a risk of human injury (such as a medical instrument, transportation equipment,
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responsibility in any way for use of any of the Products for the above special purposes.
Although LONTEN endeavors to improve the quality and reliability of its products, semiconductor products
have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain
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The content specified herein is subject to change for improvement without notice. When using a LONTEN
product, be sure to obtain the latest specifications.
Version 1.4,Jan-2020
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