P1010AT

N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM P1010AT TO-220 Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 10.5mΩ 69A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (T A = 25 ° C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±25 V TC = 25 ° C Continuous Drain Current TC = 100 ° C Pulsed Drain Current 1 Avalanche Current Avalanche Energy L = 1mH TC = 25 ° C Power Dissipation TC = 100 ° C Operating Junction & Storage Temperature Range 69 ID 49 IDM 200 IAS 23 EAS 264 A mJ 115 PD W 58 Tj, Tstg -55 to 175 °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM Junction-to-Case RJC 1.3 Junction-to-Ambient RJA 50 UNITS °C / W 1 Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (TJ = 25 ° C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNITS MIN TYP MAX STATIC Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250A 100 VGS(th) VDS = VGS, ID = 250A 2.5 Gate-Body Leakage IGSS VDS = 0V, VGS = ±25V ±100 Zero Gate Voltage Drain Current IDSS VDS = 80V, VGS = 0V 1 VDS = 80V, VGS = 0V, TJ = 125 ° C 10 Gate Threshold Voltage V 3.5 4.5 nA A G-32-3 REV 1.1 1 N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM P1010AT TO-220 Halogen-Free & Lead-Free Drain-Source On-State 1 Resistance Forward Transconductance RDS(ON) 1 VGS = 10V, ID = 20A 8.2 10.5 VGS = 7V, ID = 20A 9.9 13.5 VDS = 5V, ID = 20A 57 gfs mΩ S DYNAMIC Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge 4863 VGS = 0V, VDS = 25V, f = 1MHz VGS = 0V, VDS = 0V, f = 1MHz VGS = 7V Gate-Source Charge Gate-Drain Charge 2 Turn-On Delay Time Rise Time 2 Turn-Off Delay Time Fall Time 2 2 2 Ω 0.8 101 Qg 2 pF 297 VGS = 10V 2 375 VDS =50V,ID = 20A Qgs 76 Qgd 39 td(on) 41 tr VDD = 50V, 99 td(off) ID  20A, VGS = 10V, RGEN =6Ω 93 tf nC 28 nS 64 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T J = 25 °C) Continuous Current Forward Voltage 3 1 IS VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr IF = 20A , VGS = 0V IF = 20A , dIF/dt= 100A/μs 63 A 1.2 V 46 nS 69 nC Pulse test : Pulse Width  300 sec, Duty Cycle  2％. Independent of operating temperature. 1 2 G-32-3 REV 1.1 2 N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM P1010AT TO-220 Halogen-Free & Lead-Free Output Characteristics Transfer Characteristics 30 30 24 VGS=10V VGS=9V VGS=8V VGS=7V ID, Drain-To-Source Current(A) ID, Drain-To-Source Current(A) VGS=6V VGS=5.7V 18 12 VGS=5.5V 6 24 18 25℃ 12 125℃ 0 0 0 1 2 3 4 5 0 6 VDS, Drain-To-Source Voltage(V) On-Resistance VS Gate-To-Source Voltage 2 3 4 5 6 7 On-Resistance VS Drain Current 0.03 RDS(ON)ON-Resistance(OHM) RDS(ON)ON-Resistance(OHM) 1 VGS, Gate-To-Source Voltage(V) 0.1 0.08 0.06 0.04 0.02 0.024 0.018 0.012 VGS=7V 0.006 VGS=10V ID=20A 0 0 2 4 6 8 0 10 VGS, Gate-To-Source Voltage(V) 12 18 24 30 Capacitance Characteristic 6000 2.5 5000 C , Capacitance(pF) 3.0 2.0 1.5 1.0 VGS=10V ID=20A 0.5 6 ID , Drain-To-Source Current(A) On-Resistance VS Temperature Normalized Drain to Source ON-Resistance -20℃ 6 CISS 4000 3000 2000 1000 COSS CRSS 0 0.0 -50 -25 0 25 50 75 100 125 0 150 5 10 15 20 25 30 VDS, Drain-To-Source Voltage(V) TJ , Junction Temperature(˚C) G-32-3 REV 1.1 3 N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM Source-Drain Diode Forward Voltage 100 VDS=50V ID=20A 8 IS , Source Current(A) VGS , Gate-To-Source Voltage(V) TO-220 Halogen-Free & Lead-Free Gate charge Characteristics Characteristics 10 P1010AT 6 4 2 10 25℃ 150℃ 1 0.1 0 0 22 44 66 88 0.0 110 0.2 Qg , Total Gate Charge(nC) 0.4 0.6 0.8 Safe Operating Area 1.2 1.4 Single Pulse Maximum Power Dissipation 1000 1000 Operation in This Area is Limited by RDS(ON) Single Pulse RθJC = 1.3˚C/W TC=25˚C 800 100 10 Power(W) ID , Drain Current(A) 1.0 VSD, Source-To-Drain Voltage(V) 1ms 10ms 600 400 100ms NOTE : 1.VGS= 10V 2.TC=25˚C 3.RθJC = 1.3˚C/W 4.Single Pulse 1 DC 200 0 0.001 0.1 0.1 1 10 100 1000 VDS, Drain-To-Source Voltage(V) 0.01 0.1 1 10 100 Single Pulse Time(s) Transient Thermal Response Curve Transient Thermal Resistance r(t) , Normalized Effective 10 Duty cycle=0.5 0.2 0.1 0.05 0.02 0.01 1 Notes 0.1 single pulse 0.01 0.0001 1.Duty cycle, D= t1 / t2 2.RthJC = 1.3 ℃/W 3.TJ-TC = P*RthJC(t) 4.RthJC(t) = r(t)*RthJC 0.001 0.01 0.1 1 10 100 T1 , Square Wave Pulse Duration[sec] G-32-3 REV 1.1 4