LNC12N60

LND12N60/LNC12N60/LNE12N60/LNF12N60 Lonten N-channel 600V, 12A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 600V advanced ID 12A planer VDMOS technology. The resulting device has low conduction resistance, RDS(on),max 0.75Ω superior switching performance and high avalance Qg,typ 40.8 nC energy. Features  Low RDS(on)  Low gate charge (typ. Qg = 40.8 nC)  100% UIS tested  RoHS compliant TO-262 TO-263 TO-220 TO-220F D Applications G  Power factor correction.  Switched mode power supplies.  LED driver. S Pb N-Channel MOSFET Absolute Maximum Ratings Parameter Symbol Drain-Source Voltage VDSS Continuous drain current ( TC = 25°C ) ID Avalanche energy, single pulse Peak diode recovery dv/dt Power Dissipation 2) 3) 600 V 12 A A 48 A VGSS ±30 V EAS 605 mJ 5 V/ns IDM Gate-Source voltage Unit 7.5 ( TC = 100°C ) Pulsed drain current 1) Value dv/dt TO-220F ( TC = 25°C ) Derate above 25°C 42 W 0.34 W/°C 150 W 1.2 W/°C -55 to +150 °C PD Power Dissipation TO-220\ TO-262\ TO-263 ( TC = 25°C ) Derate above 25°C Operating juncition and storage temperature range TJ, TSTG Continuous diode forward current IS 12 A Diode pulse current IS,pulse 48 A Thermal Characteristics Parameter Symbol Value TO-220F TO-220\TO-251\TO-252 Unit Thermal resistance, Junction-to-case RθJC 2.98 0.83 °C/W Thermal resistance, Junction-to-ambient RθJA 110 62.5 °C/W Version 1.0 2018 1 www.lonten.cc LND12N60/LNC12N60/LNE12N60/LNF12N60 Package Marking and Ordering Information Device Device Package Marking Units/Tube LNC12N60 TO-220 LNC12N60 50 LND12N60 TO-220F LND12N60 50 LNE12N60 TO-263 LNE12N60 50 LNF12N60 TO-262 LNF12N60 50 Electrical Characteristics Parameter Units/Real Tc = 25°C unless otherwise noted Symbol Test Condition Min. Typ. Max. Unit Static characteristics Drain-source breakdown voltage BVDSS VGS=0 V, ID=0.25 mA 600 - - V Gate threshold voltage VGS(th) VDS=VGS, ID=0.25 mA 2 - 4 V Drain cut-off current IDSS VDS=600 V, VGS=0 V, Tj = 25°C - - 1 μA Tj = 125°C - 100 Gate leakage current, Forward IGSSF VGS=30 V, VDS=0 V - - 100 nA Gate leakage current, Reverse IGSSR VGS=-30 V, VDS=0 V - - -100 nA Drain-source on-state resistance RDS(on) VGS=10 V, ID=6A - 0.53 0.75 Ω Input capacitance Ciss VDS = 25 V, VGS = 0 V, - 1960 - Output capacitance Coss f = 1 MHz - 163 - Reverse transfer capacitance Crss - 7.2 - Turn-on delay time td(on) VDD = 300 V, ID = 12 A - 14.3 - Rise time tr RG = 10 Ω, VGS=15 V - 37.6 - Turn-off delay time td(off) - 65.4 - Fall time tf - 14.2 Dynamic characteristics pF ns - Gate charge characteristics Gate to source charge Qgs VDD=480 V, ID=12 A, - 11.0 - Gate to drain charge Qgd VGS=0 to 10 V - 15.6 - Gate charge total Qg - 40.8 - Gate plateau voltage Vplateau - 5 - V nC Reverse diode characteristics Diode forward voltage VSD VGS=0 V, IF=12 A - - 1.5 V Reverse recovery time trr VR=300 V, IF=12 A, - 387.2 - ns Reverse recovery charge Qrr dIF/dt=100 A/μs - 3.87 - μC Peak reverse recovery current Irrm - 20.3 - A Notes: 1. Pulse width limited by maximum junction temperature. 2. L=10mH, IAS = 11A, Starting Tj= 25°C. 3. ISD = 12A, di/dt≤100A/us, VDD≤BVDS, Starting Tj= 25°C. Version 1.0 2018 2 www.lonten.cc LND12N60/LNC12N60/LNE12N60/LNF12N60 Electrical Characteristics Diagrams Figure 1. Typical Output Characteristics Figure 2. Transfer Characteristics VGS=10V VGS=9V Tc = 25°C ID, Drain current (A) ID, Drain current (A) VGS=8V VGS=7V VGS=5.5V VGS=6V Tc = 150°C VGS=4.5V VDS ,Drain−source voltage (V) VGS ,Gate−source voltage (V) On-Resistance (Ω) Vth , (Normalized) Gate threshold voltage Figure 4. Threshold Voltage vs. Temperature VGS = 10 V Tc = 25°C Pulse test IDS=0.25 mA Pulse test ID ,Drain current (A) Tj ,Junction temperature (°C) Figure 6. On-Resistance vs. Temperature RDS(on), (Normalized) Drain-Source On-Resistance Figure 5. Breakdown Voltage vs. Temperature BVDSS, (Normalized) Drain-Source Breakdown Voltage RDS (on) , Drain-Source Figure 3. On-Resistance Variation vs. Drain Current VGS=0 V IDS=0.25 mA Pulse test Tj ,Junction temperature (°C) Tj ,Junction temperature (°C) Version 1.0 2018 VGS=10 V IDS=12 A Pulse test 3 www.lonten.cc LND12N60/LNC12N60/LNE12N60/LNF12N60 Figure 8. Gate Charge Characterist VGS,Gate-Source Voltage (V) Capacitance (pF) Figure 7. Capacitance Characteristics Ciss Coss Notes:f = 1 MHz,VGS=0 V Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Crss VDS=480V ID = 12 A VDS ,Drain-Source Voltage (V) QG ,Total Gate Charge (nC) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Safe Operating Area TO-220F TO-220/ TO-262/TO-263 100us ID ,Drain current (A) 10ms ID ,Drain current (A) 100us 1ms DC Limited by R DS(on) Notes: T = 25°C c T = 150°C j Limited by R DC DS(on) Notes: T = 25°C c T = 150°C j Single Pulse Single Pulse VDS ,Drain-Source Voltage (V) VDS ,Drain-Source Voltage (V) Figure 11. Power Dissipation vs. Temperature Figure 12. Power Dissipation vs. Temperature TO-220/ TO-262/TO-263 PD ,power dissipation, (W) PD ,power dissipation, (W) TO-220F Tc ,Case temperature (°C) Version 1.0 1ms 10ms 2018 Tc ,Case temperature (°C) 4 www.lonten.cc LND12N60/LNC12N60/LNE12N60/LNF12N60 Figure 14. Body Diode Transfer Characteristics ID ,Drain current (A) ISD ,Reverse Drain Current （A） Figure 13. Continuous Drain Current vs. Temperature Tc = 150° C Tc = 25°C VSD ,Source-Drain Voltage (V) Tc ,Case temperature (°C) Normalized Transient P DM t Z θJC Thermal Resistance Figure 15 Transient Thermal Impendance,Junction to Case, TO-220F In descending order D= 0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse Duty = t/T T Z (t)=2.98°C/W Max. θJC t ,Pulse Width (s) Normalized Transient P In descending order D= 0.5, 0.2, 0.1, 0.05, 0.02, 0.01, single pulse DM t Duty = t/T Z (t)=0.83°C/W Max.T θJC Z θJC Thermal Resistance Figure 16. Transient Thermal Impendance,Junction to Case, TO-220/ TO-262/TO-263 t ,Pulse Width (s) Version 1.0 2018 5 www.lonten.cc LND12N60/LNC12N60/LNE12N60/LNF12N60 Gate Charge Test Circuit & Waveform Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms Version 1.0 2018 6 www.lonten.cc LND12N60/LNC12N60/LNE12N60/LNF12N60 Mechanical Dimensions for TO-220 UNIT：mm SYMBOL MIN NOM A 4 4.8 B 1.2 1.4 B1 1 1.4 b1 0.75 0.95 c 0.4 0.55 D 15 16.5 D1 5.9 6.9 E 9.9 10.7 e 2.44 F 1.1 1.4 L 12.5 14.5 L1 3 3.5 4 ΦP 3.7 3.8 3.9 Q 2.5 3 Q1 2 2.9 Y 8.02 2.54 8.12 MAX 2.64 8.22 TO-220 Part Marking Information Lonten Logo “AB” Foundry & Assembly Code Lonten LNC12N60 ABYWW99 Part Number “99” Manufacturing Code “YWW” Date Code Version 1.0 2018 7 www.lonten.cc LND12N60/LNC12N60/LNE12N60/LNF12N60 Mechanical Dimensions for TO-220F UNIT：mm SYMBOL MIN NOM MAX A 4.5 4.9 A1 2.3 2.9 b 0.65 0.9 b1 1.1 1.7 b2 1.2 1.4 c 0.35 0.65 D 14.5 16.5 D1 6.1 6.9 E 9.6 10.3 E1 6.5 7 7.5 e 2.44 2.54 2.64 L 12.5 14.3 L1 9.45 10.05 L2 15 16 L3 3.2 4.4 ΦP 3 3.3 Q 2.5 2.9 TO-220F Part Marking Information Lonten Logo “AB” Foundry & Assembly Code “YWW” Date Code Version 1.0 2018 Lonten LND12N60 ABYWW99 Part Number “99” Manufacturing Code 8 www.lonten.cc LND12N60/LNC12N60/LNE12N60/LNF12N60 Mechanical Dimensions for TO-262 UNIT：mm SYMBOL MIN NOM A 4.42 4.72 A1 2.40 2.80 b 0.76 0.86 b1 1.22 1.40 c 0.33 0.43 c2 1.22 1.35 D 8.99 9.29 e 2.44 e1 4.98 5.18 E 9.95 10.25 L 12.50 13.60 L1 3.30 L2 1.22 Y 8.02 2.54 3.50 MAX 2.64 3.80 1.40 8.12 8.22 TO-262 Part Marking Information Lonten Logo “AB” Foundry & Assembly Code Lonten LNF12N60 ABYWW99 Part Number “99” Manufacturing Code “YWW” Date Code Version 1.0 2018 9 www.lonten.cc LND12N60/LNC12N60/LNE12N60/LNF12N60 Mechanical Dimensions for TO-263 UNIT：mm SYMBOL MIN NOM A 4.42 4.72 B 1.22 1.4 b 0.76 0.86 b1 1.22 1.4 b2 0.33 0.43 C 1.22 1.35 D 9.95 10.25 E 8.99 9.29 e1 2.44 e2 4.98 L1 14.7 15.1 15.5 L2 2 2.3 2.6 L3 1.5 2 K -0.1 0.1 Y 8.02 2.54 MAX 2.64 5.18 8.12 8.22 TO-263 Part Marking Information Lonten Logo “AB” Foundry & Assembly Code Lonten LNE12N60 ABYWW99 Part Number “99” Manufacturing Code “YWW” Date Code Version 1.0 2018 10 www.lonten.cc LND12N60/LNC12N60/LNE12N60/LNF12N60 Disclaimer The content specified herein is for the purpose of introducing LONTEN's products (hereinafter "Products"). The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. LONTEN does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of the Products or technical information described in this document. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). LONTEN shall bear no responsibility in any way for use of any of the Products for the above special purposes. Although LONTEN endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a LONTEN product. The content specified herein is subject to change for improvement without notice. When using a LONTEN product, be sure to obtain the latest specifications. Version 1.0 2018 11 www.lonten.cc