SE120120GA

SE120120G N-Channel Enhancement-Mode MOSFET Revision: A General Description This device used advanced semiconductor technology and design to provide excellent RDS(ON) with low gate charge and low operation voltage. It can be used in wide variety of application  Excellent package for superior thermal resistance  Optimized technology for DC/DC converters Easy to use and parallel  Features For a single MOSFET   VDS = 120V RDS(ON) = 4.4mΩ @ VGS=10V Pin configurations See Diagram below TO-263 Suffix “A” designates TO-220 package Absolute Maximum Ratings Parameter Symbol Rating Units Drain-Source Voltage VDS 120 V Gate-Source Voltage VGS ±20 V Drain Current Continuous Pulsed Single Pulse Avalanche Energy Total Power Dissipation @TC=25℃ Operating Junction Temperature Range ID 129 A 480 EAS 1000 mJ PD 185 W TJ -55 to 175 ℃ Thermal Resistance Symbol RθJC Parameter Thermal Resistance Junction to Case(t≤10s) ShangHai Sino-IC Microelectronic Co., Ltd. Typ Max Units - 0.8 ℃/W 1. SE120120G Electrical Characteristics Symbol (TJ=25℃ unless otherwise noted) Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS (Note 2) BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0 V IDSS Drain to Source Leakage Current VDS=120V, VGS=0V IGSS Gate-Body Leakage Current VGS=20V VGS(th) Gate Threshold Voltage VDS= VGS, ID=250μA RDS(ON) Static Drain-Source On-Resistance Forward Transconductance gFS 120 V 1 μA 100 nA 2.5 3.3 4.5 V VGS=10V, ID=60A - 4.4 6.1 mΩ VDS=10V, ID=60A 60 S DYNAMIC PARAMETERS Ciss Input Capacitance VGS=0V, VDS=50V, Coss Output Capacitance Crss Reverse Transfer Capacitance f=1MHz 5600 pF 641 pF 28 pF 84.7 nC 30.6 nC 18.3 nC SWITCHING PARAMETERS Qg Total Gate Charge 2 VGS=10V, VDS=60V, Qgs Gate Source Charge Qgd Gate Drain Charge td(on) Turn-On Delay Time VGS=10V, VDS=60, 16 ns td(off) Turn-Off Delay Time ID=60A 45 ns td(r) Turn-On Rise Time 67 ns td(f) Turn-Off Fall Time 14 ns ID=60A Source-Drain Ratings and Characteristics IS Diode Forward Current VSD Diode Forward Voltage VGS=0V,IS=129A trr Reverse Recovery Time TJ=25℃, IF=IS 60 ns Qrr Reverse Recovery Charge Di/dt=100A/μs 140 nC ShangHai Sino-IC Microelectronic Co., Ltd. 129 A 1.2 V 2. SE120120G Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 3. SE120120G Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 4. SE120120G Package Outline Dimension TO-220 ShangHai Sino-IC Microelectronic Co., Ltd. 5. SE120120G Package Outline Dimension TO-263 ShangHai Sino-IC Microelectronic Co., Ltd. 6. The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC – Printed in China – All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: webmaster@sino-ic.net Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronic Co., Ltd. 7.